Inventor
MAEKAWA KAORU
US27 patents
⚠️ This page may combine multiple inventors who share the name “MAEKAWA KAORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
24 patentsUS6706334B1Mar 16, 2004
Processing method and apparatus for removing oxide film
TOKYO ELECTRON LTD95 citations96
US6776874B2Aug 17, 2004
Processing method and apparatus for removing oxide film
TOKYO ELECTRON LTD52 citations95
US6893954B2May 17, 2005
Method for patterning a semiconductor wafer
TOKYO ELECTRON LTD12 citations84
US10861744B2Dec 8, 2020
Platform and method of operating for integrated end-to-end CMP-less interconnect process
TOKYO ELECTRON LTD7 citations82
US10217670B2Feb 26, 2019
Wrap-around contact integration scheme
TOKYO ELECTRON LTD2 citations73
US10886176B2Jan 5, 2021
Self-aligned interconnect patterning for back-end-of-line (BEOL) structures including self-aligned via through the underlying interlevel metal layer
TOKYO ELECTRON LTD5 citations71
US10777456B1Sep 15, 2020
Semiconductor back end of line (BEOL) interconnect using multiple materials in a fully self-aligned via (FSAV) process
TOKYO ELECTRON LTD6 citations71
US10157784B2Dec 18, 2018
Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization
TOKYO ELECTRON LTD4 citations71
US9607888B2Mar 28, 2017
Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling
TOKYO ELECTRON LTD2 citations71
US10580691B2Mar 3, 2020
Method of integrated circuit fabrication with dual metal power rail
TOKYO ELECTRON LTD1 citations62
US7902077B2Mar 8, 2011
Semiconductor device manufacturing method that recovers damage of the etching target while supplying a predetermined recovery gas
TOKYO ELECTRON LTD2 citations62
US10978300B2Apr 13, 2021
Methods to reduce gouging for core removal processes using thermal decomposition materials
TOKYO ELECTRON LTD1 citations61
US10950442B2Mar 16, 2021
Methods to reshape spacers for multi-patterning processes using thermal decomposition materials
TOKYO ELECTRON LTD1 citations61
US10861739B2Dec 8, 2020
Method of patterning low-k materials using thermal decomposition materials
TOKYO ELECTRON LTD1 citations61
US12131914B2Oct 29, 2024
Selective etching with fluorine, oxygen and noble gas containing plasmas
TOKYO ELECTRON LTD0 citations58
US11315789B2Apr 26, 2022
Method and structure for low density silicon oxide for fusion bonding and debonding
TOKYO ELECTRON LTD0 citations58
US11120999B2Sep 14, 2021
Plasma etching method
TOKYO ELECTRON LTD0 citations58
US12249515B2Mar 11, 2025
Etching method and etching apparatus
TOKYO ELECTRON LTD0 citations57
US11380579B2Jul 5, 2022
Method and process using dual memorization layer for multi-color spacer patterning
TOKYO ELECTRON LTD0 citations51
US10916428B2Feb 9, 2021
Method to transfer patterns to a layer
TOKYO ELECTRON LTD0 citations51
US9245847B2Jan 26, 2016
Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formed
TOKYO ELECTRON LTD1 citations51
US12438006B2Oct 7, 2025
Metal hard mask integration
TOKYO ELECTRON LTD0 citations50
US10008564B2Jun 26, 2018
Method of corner rounding and trimming of nanowires by microwave plasma
TOKYO ELECTRON LTD0 citations50
US6890848B2May 10, 2005
Fabrication process of a semiconductor device
TOKYO ELECTRON LTD0 citations46