Platform and method of operating for integrated end-to-end CMP-less interconnect process

Abstract

A method of processing materials on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules is provided. A workpiece having an upper planar surface is received into the common manufacturing platform. The method further includes conformally applying a thin film over the feature pattern using one of the film-forming modules, removing the thin film from upper surfaces of the feature pattern using one of the etching modules to leave behind the thin film in the recessed feature, and removing the fill material from the upper planar surface of the workpiece. The integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment.

What we claim: 
     
       1. A method of processing materials on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules, the integrated sequence of processing steps comprising:
 receiving the workpiece into the common manufacturing platform, the workpiece having an upper planar surface and at least one recessed feature therein; 
 depositing a fill material onto the workpiece in one of the one or more film-forming modules hosted on the common manufacturing platform such that the fill material is deposited into the recessed feature; 
 etching the workpiece in one of the one or more etching modules hosted on the common manufacturing platform to remove any fill material deposited on the upper planar surface and to leave behind the fill material in the recessed feature; and 
 obtaining measurement data to determine if the fill material in the recessed feature is coplanar with the upper planar surface, or to determine if the fill material has been removed from the upper planar surface, or both, and 
 repeating the depositing, etching, and measuring until the fill material in the recessed feature is coplanar with the upper planar surface, 
 wherein the obtaining measurement data is performed in a workpiece measurement region located within a dedicated area of at least one of the one or more transfer modules or within a metrology module hosted on the common manufacturing platform, 
 wherein the integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment, and wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment, 
 wherein depositing the fill material comprises conformally depositing a conformal layer of the fill material along the upper planar surface and along sidewall surfaces and a bottom surface of the recessed feature, and 
 wherein etching the workpiece includes removing the conformal layer from at least the upper planar surface while leaving the conformal layer on the bottom surface. 
 
     
     
       2. The method of  claim 1 , wherein the controlled environment includes a vacuum environment, an inert gas atmosphere, or a combination thereof. 
     
     
       3. The method of  claim 1 , wherein the workpiece measurement region is located in at least one of the one or more transfer modules. 
     
     
       4. The method of  claim 1 , wherein the workpiece measurement region is located in the metrology module or the etching module. 
     
     
       5. The method of  claim 1 , further comprising:
 using an intelligence system hosted on the common manufacturing platform, and 
 controlling the integrated sequence of processing steps executed on the common manufacturing platform based on the determination of whether the recess is filled. 
 
     
     
       6. The method of  claim 1 , wherein obtaining the measurement data includes:
 directing an optical beam from at least one optical source incident on a measurement surface of the workpiece; and 
 receiving an optical signal scattered from the measurement surface of the workpiece into at least one detector. 
 
     
     
       7. The method of  claim 1 , wherein the integrated sequence of processing steps is executed without chemical-mechanical planarization of the upper planar surface. 
     
     
       8. The method of  claim 1 , wherein the common manufacturing platform includes at least two deposition modules, at least two metrology modules, and at least two etching modules. 
     
     
       9. The method of  claim 1 , wherein the fill material is ruthenium, tungsten, cobalt, nickel, molybdenum, aluminum, niobium, titanium, copper, or a combination thereof. 
     
     
       10. A method of processing materials on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules, the integrated sequence of processing steps comprising:
 receiving the workpiece into the common manufacturing platform, the workpiece having an upper planar surface and at least one recessed feature therein; 
 depositing a fill material onto the workpiece in one of the one or more film-forming modules hosted on the common manufacturing platform such that the fill material is deposited into the recessed feature; 
 etching the workpiece in one of the one or more etching modules hosted on the common manufacturing platform to remove any fill material deposited on the upper planar surface and to leave behind the fill material in the recessed feature; and 
 repeating the depositing, etching, and measuring until the fill material in the recessed feature is coplanar with the upper planar surface, 
 wherein the integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment, and wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment, 
 wherein depositing the fill material comprises conformally depositing a conformal layer of the fill material along the upper planar surface and along sidewall surfaces and a bottom surface of the recessed feature, and 
 wherein etching the workpiece includes removing the conformal layer from at least the upper planar surface while leaving the conformal layer on the bottom surface. 
 
     
     
       11. A method of processing materials on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules, the integrated sequence of processing steps comprising:
 receiving the workpiece into the common manufacturing platform, the workpiece having an upper planar surface and at least one recessed feature therein; 
 depositing a fill material onto the workpiece in one of the one or more film-forming modules hosted on the common manufacturing platform such that the fill material is deposited into the recessed feature; 
 etching the workpiece in one of the one or more etching modules hosted on the common manufacturing platform to remove any fill material deposited on the upper planar surface and to leave behind the fill material in the recessed feature; and 
 obtaining measurement data to determine if the fill material in the recessed feature is coplanar with the upper planar surface, or to determine if the fill material has been removed from the upper planar surface, or both, and 
 repeating the depositing, etching, and measuring until the fill material in the recessed feature is coplanar with the upper planar surface, 
 wherein the obtaining measurement data is performed in a workpiece measurement region located within a dedicated area of at least one of the one or more transfer modules or within a metrology module hosted on the common manufacturing platform, 
 wherein the integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment, and wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment, 
 wherein depositing the fill material comprises selectively depositing the fill material onto a bottom surface of the recessed feature, and wherein etching the workpiece includes removing any fill material deposited as a contaminant on the upper planar surface, and 
 wherein obtaining the measurement data includes
 directing an optical beam from at least one optical source incident on a measurement surface of the workpiece; and 
 receiving an optical signal scattered from the measurement surface of the workpiece into at least one detector. 
 
 
     
     
       12. The method of  claim 11 , wherein the controlled environment includes a vacuum environment, an inert gas atmosphere, or a combination thereof. 
     
     
       13. The method of  claim 11 , wherein the workpiece measurement region is located in at least one of the one or more transfer modules. 
     
     
       14. The method of  claim 11 , wherein the workpiece measurement region is located in the metrology module or the etching module. 
     
     
       15. The method of  claim 11 , wherein the common platform includes at least two deposition modules, at least two metrology modules, and at least two etching modules. 
     
     
       16. The method of  claim 11 , wherein the integrated sequence of processing steps is performed without chemical-mechanical planarization of the upper planar surface. 
     
     
       17. The method of  claim 11 , wherein the fill material has an affinity for a material included in the recessed feature. 
     
     
       18. The method of  claim 11 , wherein the fill material is ruthenium, tungsten, cobalt, nickel, molybdenum, aluminum, niobium, titanium, copper, or a combination thereof.