Inventor · disambiguated record
Nicholas Joy
Also filed as: JOY NICHOLAS
15 granted patents·5 pending applications·21 citations·filing 2016–2024
88Inventor score
Top patents by PatentIndex Score
20 records- 0192US10861744B2Platform and method of operating for integrated end-to-end CMP-less interconnect processTOKYO ELECTRON LTD·Filed 2019·Granted Dec 8, 2020·7 cites·18 claims
- 0288US11322364B2Method of patterning a metal film with improved sidewall roughnessTOKYO ELECTRON LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 0388US11024535B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2019·Granted Jun 1, 2021·4 cites·19 claims
- 0482US10903077B2Methods to protect nitride layers during formation of silicon germanium nano-wires in microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2019·Granted Jan 26, 2021·3 cites·24 claims
- 0577US10734278B2Method of protecting low-K layersTOKYO ELECTRON LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 0669US10580691B2Method of integrated circuit fabrication with dual metal power railTOKYO ELECTRON LTD·Filed 2018·Granted Mar 3, 2020·1 cites·19 claims
- 0764US11621190B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 0864US9875947B2Method of surface profile correction using gas cluster ion beamTEL EPION INC·Filed 2016·Granted Jan 23, 2018·1 cites·20 claims
- 0962US12417925B2Method of conductive material depositionTOKYO ELECTRON LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 1059US12334391B2Method for patterning a substrate using photolithographyTOKYO ELECTRON LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
- 1156US2025259891A1Protection structure for liner removalTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1255US2025308988A1Method for protecting graphene layer during metal etchingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1355US2025079174A1Method for processing a substrateTOKYO ELECTION LTD·Filed 2023·Application pending·0 cites
- 1453US11450562B2Method of bottom-up metallization in a recessed featureTOKYO ELECTRON LTD·Filed 2020·Granted Sep 20, 2022·0 cites·19 claims
- 1553US2024371655A1Protection Layer Formation during Plasma Etching Conductive MaterialsTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1651US2025308897A1Hard mask protection of metal interconnectsTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1750US10700009B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 1849US12057322B2Methods for etching metal films using plasma processingTOKYO ELECTRON LTD·Filed 2019·Granted Aug 6, 2024·0 cites·12 claims
- 1947US11133194B2Method for selective etching at an interface between materialsTOKYO ELECTRON LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
- 2039US10256095B2Method for high throughput using beam scan size and beam position in gas cluster ion beam processing systemTEL EPION INC·Filed 2016·Granted Apr 9, 2019·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →