Inventor
KANG SUNG-KWAN
US32 patents
⚠️ This page may combine multiple inventors who share the name “KANG SUNG-KWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
24 patentsUS10790287B2Sep 29, 2020
Reducing gate induced drain leakage in DRAM wordline
APPLIED MATERIALS INC12 citations86
US10998329B2May 4, 2021
Methods and apparatus for three dimensional NAND structure fabrication
APPLIED MATERIALS INC11 citations85
US10964717B2Mar 30, 2021
Methods and apparatus for three-dimensional NAND structure fabrication
APPLIED MATERIALS INC8 citations83
US11552082B2Jan 10, 2023
Reducing gate induced drain leakage in DRAM wordline
APPLIED MATERIALS INC2 citations73
US11295786B2Apr 5, 2022
3D dram structure with high mobility channel
APPLIED MATERIALS INC5 citations73
US11818877B2Nov 14, 2023
Three-dimensional dynamic random access memory (DRAM) and methods of forming the same
APPLIED MATERIALS INC2 citations72
US10529602B1Jan 7, 2020
Method and apparatus for substrate fabrication
APPLIED MATERIALS INC5 citations72
US11621266B2Apr 4, 2023
Method of testing a gap fill for DRAM
APPLIED MATERIALS INC2 citations71
US11171141B2Nov 9, 2021
Gap fill methods of forming buried word lines in DRAM without forming bottom voids
APPLIED MATERIALS INC2 citations71
US12581637B2Mar 17, 2026
Methods and structures for three-dimensional dynamic random-access memory
APPLIED MATERIALS INC0 citations62
US12550317B2Feb 10, 2026
Direct word line contact and methods of manufacture for 3D memory
APPLIED MATERIALS INC0 citations62
US12482749B2Nov 25, 2025
L-type wordline connection structure for three-dimensional memory
APPLIED MATERIALS INC0 citations62
US12148475B2Nov 19, 2024
Selection gate separation for 3D NAND
APPLIED MATERIALS INC0 citations62
US11763856B2Sep 19, 2023
3-D DRAM structure with vertical bit-line
APPLIED MATERIALS INC0 citations62
US11749315B2Sep 5, 2023
3D DRAM structure with high mobility channel
APPLIED MATERIALS INC0 citations62
US11587796B2Feb 21, 2023
3D-NAND memory cell structure
APPLIED MATERIALS INC0 citations62
US11545504B2Jan 3, 2023
Methods and apparatus for three dimensional NAND structure fabrication
APPLIED MATERIALS INC0 citations62
US11430801B2Aug 30, 2022
Methods and apparatus for three dimensional NAND structure fabrication
APPLIED MATERIALS INC0 citations62
US12387978B2Aug 12, 2025
Ru liner above a barrier layer
APPLIED MATERIALS INC0 citations58
US11765889B2Sep 19, 2023
Method to scale dram with self aligned bit line process
APPLIED MATERIALS INC0 citations58
US12543521B2Feb 3, 2026
Methods of forming memory device with reduced resistivity
APPLIED MATERIALS INC0 citations56
US12477723B2Nov 18, 2025
Three dimensional memory device and method of fabrication
APPLIED MATERIALS INC0 citations52
US11587930B2Feb 21, 2023
3-D DRAM structures and methods of manufacture
APPLIED MATERIALS INC0 citations52
US10700072B2Jun 30, 2020
Cap layer for bit line resistance reduction
APPLIED MATERIALS INC0 citations41
SAMSUNG ELECTRONICS CO LTD
5 patentsUS7560319B2Jul 14, 2009
Method for fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations63
US7871906B2Jan 18, 2011
Storage nodes including a phase chang layer and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7470603B2Dec 30, 2008
Methods of fabricating semiconductor devices having laser-formed single crystalline active structures
SAMSUNG ELECTRONICS CO LTD1 citations52
US7396761B2Jul 8, 2008
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US8039900B2Oct 18, 2011
Stacked semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations37