Inventor

MOORE JOHN T

US178 patents

Patents

50 patents

US7151273B2Dec 19, 2006

Memory device and methods of controlling resistance variation and resistance profile drift

MICRON TECHNOLOGY INC83 citations98

US6867996B2Mar 15, 2005

Single-polarity programmable resistance-variable memory element

MICRON TECHNOLOGY INC94 citations98

US6348380B1Feb 19, 2002

Use of dilute steam ambient for improvement of flash devices

MICRON TECHNOLOGY INC325 citations98

US6218293B1Apr 17, 2001

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

MICRON TECHNOLOGY INC90 citations98

US7550380B2Jun 23, 2009

Electroless plating of metal caps for chalcogenide-based memory devices

MICRON TECHNOLOGY INC94 citations97

US7332401B2Feb 19, 2008

Method of fabricating an electrode structure for use in an integrated circuit

MICRON TECHNOLOGY INC53 citations96

US6961277B2Nov 1, 2005

Method of refreshing a PCRAM memory device

MICRON TECHNOLOGY INC52 citations96

US6881623B2Apr 19, 2005

Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device

MICRON TECHNOLOGY INC64 citations96

US6858523B2Feb 22, 2005

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

MICRON TECHNOLOGY INC51 citations96

US6856002B2Feb 15, 2005

Graded GexSe100-x concentration in PCRAM

MICRON TECHNOLOGY INC36 citations96

US6727192B2Apr 27, 2004

Methods of metal doping a chalcogenide material

MICRON TECHNOLOGY INC46 citations96

US6709887B2Mar 23, 2004

Method of forming a chalcogenide comprising device

MICRON TECHNOLOGY INC64 citations96

US6710423B2Mar 23, 2004

Chalcogenide comprising device

MICRON TECHNOLOGY INC35 citations96

US6686298B1Feb 3, 2004

Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates

MICRON TECHNOLOGY INC31 citations96

US6638820B2Oct 28, 2003

Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices

MICRON TECHNOLOGY INC40 citations96

US6548405B2Apr 15, 2003

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

MICRON TECHNOLOGY INC48 citations96

US6429070B1Aug 6, 2002

DRAM cell constructions, and methods of forming DRAM cells

MICRON TECHNOLOGY INC37 citations96

US6391738B2May 21, 2002

Semiconductor processing method and trench isolation method

MICRON TECHNOLOGY INC54 citations96

US6365519B2Apr 2, 2002

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

MICRON TECHNOLOGY INC42 citations96

US6362105B1Mar 26, 2002

Method and apparatus for endpointing planarization of a microelectronic substrate

MICRON TECHNOLOGY INC74 citations96

US6342437B1Jan 29, 2002

Transistor and method of making the same

MICRON TECHNOLOGY INC28 citations96

US6184571B1Feb 6, 2001

Method and apparatus for endpointing planarization of a microelectronic substrate

MICRON TECHNOLOGY INC71 citations96

US6162737ADec 19, 2000

Films doped with carbon for use in integrated circuit technology

MICRON TECHNOLOGY INC36 citations96

US5985771ANov 16, 1999

Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers

MICRON TECHNOLOGY INC42 citations96

US7723713B2May 25, 2010

Layered resistance variable memory device and method of fabrication

MICRON TECHNOLOGY INC14 citations93

US7646007B2Jan 12, 2010

Silver-selenide/chalcogenide glass stack for resistance variable memory

MICRON TECHNOLOGY INC15 citations93

US7518212B2Apr 14, 2009

Graded GexSe100-x concentration in PCRAM

MICRON TECHNOLOGY INC19 citations93

US7385868B2Jun 10, 2008

Method of refreshing a PCRAM memory device

MICRON TECHNOLOGY INC16 citations93

US7374174B2May 20, 2008

Small electrode for resistance variable devices

MICRON TECHNOLOGY INC30 citations93

US7315465B2Jan 1, 2008

Methods of operating and forming chalcogenide glass constant current devices

MICRON TECHNOLOGY INC12 citations93

US7153746B2Dec 26, 2006

Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers

MICRON TECHNOLOGY INC13 citations93

US7139188B2Nov 21, 2006

Memory architecture and method of manufacture and operation thereof

MICRON TECHNOLOGY INC13 citations93

US7115504B2Oct 3, 2006

Method of forming electrode structure for use in an integrated circuit

MICRON TECHNOLOGY INC26 citations93

US7087454B2Aug 8, 2006

Fabrication of single polarity programmable resistance structure

MICRON TECHNOLOGY INC41 citations93

US7087919B2Aug 8, 2006

Layered resistance variable memory device and method of fabrication

MICRON TECHNOLOGY INC28 citations93

US7084448B2Aug 1, 2006

Double sided container process used during the manufacture of a semiconductor device

MICRON TECHNOLOGY INC14 citations93

US7067348B2Jun 27, 2006

Method of forming a programmable memory cell and chalcogenide structure

MICRON TECHNOLOGY INC15 citations93

US7056762B2Jun 6, 2006

Methods to form a memory cell with metal-rich metal chalcogenide

MICRON TECHNOLOGY INC22 citations93

US7030410B2Apr 18, 2006

Resistance variable device

MICRON TECHNOLOGY INC27 citations93

US7018863B2Mar 28, 2006

Method of manufacture of a resistance variable memory cell

MICRON TECHNOLOGY INC23 citations93

US6998697B2Feb 14, 2006

Non-volatile resistance variable devices

MICRON TECHNOLOGY INC23 citations93

US6953720B2Oct 11, 2005

Methods for forming chalcogenide glass-based memory elements

MICRON TECHNOLOGY INC27 citations93

US6951805B2Oct 4, 2005

Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry

MICRON TECHNOLOGY INC21 citations93

US6912147B2Jun 28, 2005

Chalcogenide glass constant current device, and its method of fabrication and operation

MICRON TECHNOLOGY INC13 citations93

US6891749B2May 10, 2005

Resistance variable ‘on ’ memory

MICRON TECHNOLOGY INC44 citations93

Showing the top 50 of 178 patents by PatentIndex Score.

MOORE JOHN T

Patents

Silver-selenide/chalcogenide glass stack for resistance variable memory

Films doped with carbon for use in integrated circuit technology

PCRAM cell manufacturing

Methods of forming carbon-containing layers

Method of forming chalcogenide comprising devices

Memory device and methods of controlling resistance variation and resistance profile drift

Single-polarity programmable resistance-variable memory element

Use of dilute steam ambient for improvement of flash devices

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

Electroless plating of metal caps for chalcogenide-based memory devices

Method of fabricating an electrode structure for use in an integrated circuit

Method of refreshing a PCRAM memory device

Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

Graded GexSe100-x concentration in PCRAM

Methods of metal doping a chalcogenide material

Method of forming a chalcogenide comprising device

Chalcogenide comprising device

Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates

Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

DRAM cell constructions, and methods of forming DRAM cells

Semiconductor processing method and trench isolation method

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

Method and apparatus for endpointing planarization of a microelectronic substrate

Transistor and method of making the same

Method and apparatus for endpointing planarization of a microelectronic substrate

Films doped with carbon for use in integrated circuit technology

Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers

Layered resistance variable memory device and method of fabrication

Silver-selenide/chalcogenide glass stack for resistance variable memory

Graded GexSe100-x concentration in PCRAM

Method of refreshing a PCRAM memory device

Small electrode for resistance variable devices

Methods of operating and forming chalcogenide glass constant current devices

Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers

Memory architecture and method of manufacture and operation thereof

Method of forming electrode structure for use in an integrated circuit

Fabrication of single polarity programmable resistance structure

Layered resistance variable memory device and method of fabrication

Double sided container process used during the manufacture of a semiconductor device

Method of forming a programmable memory cell and chalcogenide structure

Methods to form a memory cell with metal-rich metal chalcogenide

Resistance variable device

Method of manufacture of a resistance variable memory cell

Non-volatile resistance variable devices

Methods for forming chalcogenide glass-based memory elements

Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry

Chalcogenide glass constant current device, and its method of fabrication and operation

Resistance variable ‘on ’ memory