P

Inventor

CLARK JR WILLIAM F

US65 patents
⚠️ This page may combine multiple inventors who share the name “CLARK JR WILLIAM F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

39 patents
US7091551B1Aug 15, 2006

Four-bit FinFET NVRAM memory device

IBM163 citations99
US6475838B1Nov 5, 2002

Methods for forming decoupling capacitors

IBM79 citations98
US7517806B2Apr 14, 2009

Integrated circuit having pairs of parallel complementary FinFETs

IBM21 citations93
US7102166B1Sep 5, 2006

Hybrid orientation field effect transistors (FETs)

IBM24 citations93
US6943405B2Sep 13, 2005

Integrated circuit having pairs of parallel complementary FinFETs

IBM28 citations93
US6552396B1Apr 22, 2003

Matched transistors and methods for forming the same

IBM52 citations93
US6469350B1Oct 22, 2002

Active well schemes for SOI technology

IBM27 citations93
US7115947B2Oct 3, 2006

Multiple dielectric finfet structure and method

IBM23 citations87
US7915670B2Mar 29, 2011

Asymmetric field effect transistor structure and method

IBM8 citations84
US7891865B2Feb 22, 2011

Structure for bolometric on-chip temperature sensor

IBM9 citations84
US7843016B2Nov 30, 2010

Asymmetric field effect transistor structure and method

IBM14 citations84
US7667527B2Feb 23, 2010

Circuit to compensate threshold voltage variation due to process variation

IBM9 citations84
US6664150B2Dec 16, 2003

Active well schemes for SOI technology

IBM14 citations84
US7484886B2Feb 3, 2009

Bolometric on-chip temperature sensor

IBM7 citations74
US7416941B2Aug 26, 2008

Four-bit finfet NVRAM memory device

IBM7 citations74
US7387937B2Jun 17, 2008

Thermal dissipation structures for FinFETs

IBM7 citations74
US7009265B2Mar 7, 2006

Low capacitance FET for operation at subthreshold voltages

IBM10 citations74
US9397086B2Jul 19, 2016

Passive devices for FinFET integrated circuit technologies

IBM3 citations73
US9337088B2May 10, 2016

MOL resistor with metal grid heat shield

IBM2 citations63
US8350338B2Jan 8, 2013

Semiconductor device including high field regions and related method

IBM2 citations63
US8053314B2Nov 8, 2011

Asymmetric field effect transistor structure and method

IBM2 citations63
US8039376B2Oct 18, 2011

Methods of changing threshold voltages of semiconductor transistors by ion implantation

IBM5 citations63
US7943997B2May 17, 2011

Fully-depleted low-body doping field effect transistor (FET) with reverse short channel effects (SCE) induced by self-aligned edge back-gate(s)

IBM2 citations63
US7932134B2Apr 26, 2011

Method of forming a semiconductor structure

IBM2 citations63
US7910418B2Mar 22, 2011

Complementary metal gate dense interconnect and method of manufacturing

IBM4 citations63
US7745879B2Jun 29, 2010

Method of fabricating high voltage fully depleted SOI transistor and structure thereof

IBM2 citations63
US7736053B2Jun 15, 2010

Bolometric on-chip temperature sensor

IBM2 citations63
US7659155B2Feb 9, 2010

Method of forming a transistor having gate and body in direct self-aligned contact

IBM2 citations63
US7560753B2Jul 14, 2009

Field effect transistor with thin gate electrode and method of fabricating same

IBM4 citations63
US7494850B2Feb 24, 2009

Ultra-thin logic and backgated ultra-thin SRAM

IBM3 citations63
US7400015B1Jul 15, 2008

Semiconductor structure with field shield and method of forming the structure

IBM5 citations63
US7378357B2May 27, 2008

Multiple dielectric FinFET structure and method

IBM4 citations63
US7374980B2May 20, 2008

Field effect transistor with thin gate electrode and method of fabricating same

IBM2 citations63
US7355249B2Apr 8, 2008

Silicon-on-insulator based radiation detection device and method

IBM4 citations63
US7312502B2Dec 25, 2007

Multiple dielectric FinFET structure and method

IBM4 citations63
US6333230B1Dec 25, 2001

Scalable high-voltage devices

IBM6 citations63
US8017489B2Sep 13, 2011

Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed

IBM5 citations58
US9356014B2May 31, 2016

High-voltage metal-insulator-semiconductor field effect transistor structures

IBM0 citations52
US9059131B2Jun 16, 2015

Charge breakdown avoidance for MIM elements in SOI base technology and method

IBM0 citations52

CLARK JR WILLIAM F

7 patents

ABOU-KHALIL MICHEL J

1 patent

BOTULA ALAN B

1 patent

ANDERSON BRENT A

1 patent

GLOBALFOUNDRIES INC

1 patent

Showing the top 50 of 65 patents by PatentIndex Score.