Inventor
CLARK JR WILLIAM F
US65 patents
⚠️ This page may combine multiple inventors who share the name “CLARK JR WILLIAM F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
39 patentsUS7091551B1Aug 15, 2006
Four-bit FinFET NVRAM memory device
IBM163 citations99
US6475838B1Nov 5, 2002
Methods for forming decoupling capacitors
IBM79 citations98
US7517806B2Apr 14, 2009
Integrated circuit having pairs of parallel complementary FinFETs
IBM21 citations93
US7102166B1Sep 5, 2006
Hybrid orientation field effect transistors (FETs)
IBM24 citations93
US6943405B2Sep 13, 2005
Integrated circuit having pairs of parallel complementary FinFETs
IBM28 citations93
US6552396B1Apr 22, 2003
Matched transistors and methods for forming the same
IBM52 citations93
US6469350B1Oct 22, 2002
Active well schemes for SOI technology
IBM27 citations93
US7115947B2Oct 3, 2006
Multiple dielectric finfet structure and method
IBM23 citations87
US7915670B2Mar 29, 2011
Asymmetric field effect transistor structure and method
IBM8 citations84
US7891865B2Feb 22, 2011
Structure for bolometric on-chip temperature sensor
IBM9 citations84
US7843016B2Nov 30, 2010
Asymmetric field effect transistor structure and method
IBM14 citations84
US7667527B2Feb 23, 2010
Circuit to compensate threshold voltage variation due to process variation
IBM9 citations84
US6664150B2Dec 16, 2003
Active well schemes for SOI technology
IBM14 citations84
US7484886B2Feb 3, 2009
Bolometric on-chip temperature sensor
IBM7 citations74
US7416941B2Aug 26, 2008
Four-bit finfet NVRAM memory device
IBM7 citations74
US7387937B2Jun 17, 2008
Thermal dissipation structures for FinFETs
IBM7 citations74
US7009265B2Mar 7, 2006
Low capacitance FET for operation at subthreshold voltages
IBM10 citations74
US9397086B2Jul 19, 2016
Passive devices for FinFET integrated circuit technologies
IBM3 citations73
US9337088B2May 10, 2016
MOL resistor with metal grid heat shield
IBM2 citations63
US8350338B2Jan 8, 2013
Semiconductor device including high field regions and related method
IBM2 citations63
US8053314B2Nov 8, 2011
Asymmetric field effect transistor structure and method
IBM2 citations63
US8039376B2Oct 18, 2011
Methods of changing threshold voltages of semiconductor transistors by ion implantation
IBM5 citations63
US7943997B2May 17, 2011
Fully-depleted low-body doping field effect transistor (FET) with reverse short channel effects (SCE) induced by self-aligned edge back-gate(s)
IBM2 citations63
US7932134B2Apr 26, 2011
Method of forming a semiconductor structure
IBM2 citations63
US7910418B2Mar 22, 2011
Complementary metal gate dense interconnect and method of manufacturing
IBM4 citations63
US7745879B2Jun 29, 2010
Method of fabricating high voltage fully depleted SOI transistor and structure thereof
IBM2 citations63
US7736053B2Jun 15, 2010
Bolometric on-chip temperature sensor
IBM2 citations63
US7659155B2Feb 9, 2010
Method of forming a transistor having gate and body in direct self-aligned contact
IBM2 citations63
US7560753B2Jul 14, 2009
Field effect transistor with thin gate electrode and method of fabricating same
IBM4 citations63
US7494850B2Feb 24, 2009
Ultra-thin logic and backgated ultra-thin SRAM
IBM3 citations63
US7400015B1Jul 15, 2008
Semiconductor structure with field shield and method of forming the structure
IBM5 citations63
US7378357B2May 27, 2008
Multiple dielectric FinFET structure and method
IBM4 citations63
US7374980B2May 20, 2008
Field effect transistor with thin gate electrode and method of fabricating same
IBM2 citations63
US7355249B2Apr 8, 2008
Silicon-on-insulator based radiation detection device and method
IBM4 citations63
US7312502B2Dec 25, 2007
Multiple dielectric FinFET structure and method
IBM4 citations63
US6333230B1Dec 25, 2001
Scalable high-voltage devices
IBM6 citations63
US8017489B2Sep 13, 2011
Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
IBM5 citations58
US9356014B2May 31, 2016
High-voltage metal-insulator-semiconductor field effect transistor structures
IBM0 citations52
US9059131B2Jun 16, 2015
Charge breakdown avoidance for MIM elements in SOI base technology and method
IBM0 citations52
CLARK JR WILLIAM F
7 patentsUS9219056B2Dec 22, 2015
Passive devices for FinFET integrated circuit technologies
CLARK JR WILLIAM F6 citations84
US8692291B2Apr 8, 2014
Passive devices for FinFET integrated circuit technologies
CLARK JR WILLIAM F10 citations84
US8916440B2Dec 23, 2014
Semiconductor structures and methods of manufacture
CLARK JR WILLIAM F3 citations62
US8916426B2Dec 23, 2014
Passive devices for FinFET integrated circuit technologies
CLARK JR WILLIAM F3 citations62
US8575668B2Nov 5, 2013
Charge breakdown avoidance for MIM elements in SOI base technology and method
CLARK JR WILLIAM F2 citations62
US8106457B2Jan 31, 2012
Silicon-on-insulator based radiation detection device and method
CLARK JR WILLIAM F2 citations62
US9041105B2May 26, 2015
Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure
CLARK JR WILLIAM F1 citations52
ABOU-KHALIL MICHEL J
1 patentBOTULA ALAN B
1 patentANDERSON BRENT A
1 patentGLOBALFOUNDRIES INC
1 patentShowing the top 50 of 65 patents by PatentIndex Score.