P

Inventor

POPP MARTIN

DE38 patents
⚠️ This page may combine multiple inventors who share the name “POPP MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

16 patents
US7119384B2Oct 10, 2006

Field effect transistor and method for fabricating it

INFINEON TECHNOLOGIES AG32 citations92
US6853023B2Feb 8, 2005

Semiconductor memory cell configuration and a method for producing the configuration

INFINEON TECHNOLOGIES AG42 citations92
US7274060B2Sep 25, 2007

Memory cell array and method of forming the same

INFINEON TECHNOLOGIES AG16 citations84
US6740595B2May 25, 2004

Etch process for recessing polysilicon in trench structures

INFINEON TECHNOLOGIES AG16 citations83
US6835666B2Dec 28, 2004

Method for fabricating a mask for semiconductor structures

INFINEON TECHNOLOGIES AG12 citations74
US6600680B2Jul 29, 2003

Circuit configuration and method for determining a time constant of a storage capacitor of a memory cell in a semiconductor memory

INFINEON TECHNOLOGIES AG8 citations74
US6916721B2Jul 12, 2005

Method for fabricating a trench capacitor with an insulation collar

INFINEON TECHNOLOGIES AG11 citations72
US7273790B2Sep 25, 2007

Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cell

INFINEON TECHNOLOGIES AG2 citations63
US7087492B2Aug 8, 2006

Method for fabricating transistors of different conduction types and having different packing densities in a semiconductor substrate

INFINEON TECHNOLOGIES AG3 citations62
US7012289B2Mar 14, 2006

Memory cell having a thin insulation collar and memory module

INFINEON TECHNOLOGIES AG3 citations62
US6924225B2Aug 2, 2005

Method for producing an electrically conductive contact

INFINEON TECHNOLOGIES AG2 citations62
US6977405B2Dec 20, 2005

Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it

INFINEON TECHNOLOGIES AG2 citations61
US6956260B2Oct 18, 2005

Integrated semiconductor memory with wordlines conductively connected to one another in pairs

INFINEON TECHNOLOGIES AG4 citations61
US6821863B2Nov 23, 2004

Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer

INFINEON TECHNOLOGIES AG2 citations58
US7129155B2Oct 31, 2006

Process for producing a plurality of gate stacks which are approximately the same height and equidistant on a semiconductor substrate

INFINEON TECHNOLOGIES AG1 citations51
US6825079B2Nov 30, 2004

Method for producing a horizontal insulation layer on a conductive material in a trench

INFINEON TECHNOLOGIES AG0 citations42

QIMONDA AG

5 patents

POPP MARTIN

4 patents

FED MOGUL NURNBERG GMBH

4 patents

ESPROS PHOTONICS AG

3 patents

SMAGLINSKI INGO

2 patents

PAATZSCH THOMAS

1 patent

DENSO CORP

1 patent

MOLL HANS-PETER

1 patent

CUBE OPTICS AG

1 patent