Inventor · disambiguated record
Terutaka Goto
Also filed as: GOTO TERUTAKA
3 granted patents·2 pending applications·9 citations·filing 2007–2014
58Inventor score
Top patents by PatentIndex Score
5 records- 0172US8215175B2Quantitative evaluation device of atomic vacancies existing in silicon wafer, method for the device, silicon wafer manufacturing method, and thin-film oscillatorGOTO TERUTAKA·Filed 2008·Granted Jul 10, 2012·7 cites·11 claims
- 0265US8037761B2Quantitative evaluation device and method of atomic vacancy existing in silicon waferUNIV NIIGATA·Filed 2007·Granted Oct 18, 2011·2 cites·19 claims
- 0343US2009217866A1METHOD FOR PRODUCING Si SINGLE CRYSTAL INGOT BY CZ METHODSUMCO CORP·Filed 2007·Application pending·0 cites
- 0438US2016258908A1Method for evaluating atomic vacancy in surface layer of silicon wafer and apparatus for evaluating the sameUNIV NIIGATA·Filed 2014·Application pending·0 cites
- 0527US8578777B2Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon waferGOTO TERUTAKA·Filed 2010·Granted Nov 12, 2013·0 cites·6 claims
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