Inventor
SON BYOUNGKEUN
KR47 patents
⚠️ This page may combine multiple inventors who share the name “SON BYOUNGKEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
27 patentsUS8383482B2Feb 26, 2013
Three-dimensional semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD39 citations94
US7972955B2Jul 5, 2011
Three dimensional semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations92
US10600801B2Mar 24, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US10038007B2Jul 31, 2018
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations84
US9754957B2Sep 5, 2017
Nonvolatile memory devices and methods forming the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US9105736B2Aug 11, 2015
Three-dimensional nonvolatile memory devices including interposed floating gates
SAMSUNG ELECTRONICS CO LTD6 citations84
US8728893B2May 20, 2014
Method of fabricating a three-dimentional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US9905574B2Feb 27, 2018
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US9793292B2Oct 17, 2017
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US10586808B2Mar 10, 2020
Semiconductor device including a stack having a sidewall with recessed and protruding portions
SAMSUNG ELECTRONICS CO LTD1 citations72
US10411031B2Sep 10, 2019
Semiconductor device including a stack having a sidewall with recessed and protruding portions
SAMSUNG ELECTRONICS CO LTD3 citations72
US9093479B2Jul 28, 2015
Method of forming nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US9356159B2May 31, 2016
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations63
US9240419B2Jan 19, 2016
Three-dimensional semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US9190533B2Nov 17, 2015
Three-dimensional nonvolatile memory devices including interposed floating gates
SAMSUNG ELECTRONICS CO LTD1 citations63
US9047952B2Jun 2, 2015
Nonvolatile memory devices and methods forming the same
SAMSUNG ELECTRONICS CO LTD1 citations63
USRE50089EAug 20, 2024
Three dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11121154B2Sep 14, 2021
Semiconductor device including a stack having a sidewall with recessed and protruding portions
SAMSUNG ELECTRONICS CO LTD0 citations62
US11107833B2Aug 31, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US10978479B2Apr 13, 2021
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US10748929B2Aug 18, 2020
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US10559590B2Feb 11, 2020
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US10483278B2Nov 19, 2019
Nonvolatile memory devices and methods forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10037888B2Jul 31, 2018
Three-dimensional nonvolatile memory devices including interposed floating gates
SAMSUNG ELECTRONICS CO LTD0 citations52
US9337351B2May 10, 2016
Three-dimensional nonvolatile memory devices including interposed floating gates
SAMSUNG ELECTRONICS CO LTD0 citations52
US9136395B2Sep 15, 2015
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9490130B2Nov 8, 2016
Method of manufacturing three-dimensional semiconductor memory device in which an oxide layer is formed at bottom of vertical structure of the device
SAMSUNG ELECTRONICS CO LTD0 citations40
LEE CHANGHYUN
8 patentsUS8569827B2Oct 29, 2013
Three-dimensional semiconductor memory devices
LEE CHANGHYUN33 citations96
US8625348B2Jan 7, 2014
Nonvolatile memory devices and methods forming the same
LEE CHANGHYUN12 citations92
US8981458B2Mar 17, 2015
Three-dimensional semiconductor devices and methods of fabricating the same
LEE CHANGHYUN9 citations84
US8891315B2Nov 18, 2014
Nonvolatile memory device and erase method thereof
LEE CHANGHYUN16 citations84
US9177965B2Nov 3, 2015
Nonvolatile memory device in three-dimensional structure with a stress reducing materials on the channel
LEE CHANGHYUN12 citations81
US8829589B2Sep 9, 2014
Three-dimensional semiconductor memory device
LEE CHANGHYUN4 citations73
US8643080B2Feb 4, 2014
Three-dimensional semiconductor memory device
LEE CHANGHYUN6 citations73
US9536895B2Jan 3, 2017
Methods of fabricating three-dimensional semiconductor devices
LEE CHANGHYUN0 citations52
SON BYOUNGKEUN
6 patentsUS8284601B2Oct 9, 2012
Semiconductor memory device comprising three-dimensional memory cell array
SON BYOUNGKEUN40 citations93
US8338244B2Dec 25, 2012
Methods of fabricating three-dimensional nonvolatile memory devices using expansions
SON BYOUNGKEUN17 citations92
US8787082B2Jul 22, 2014
Semiconductor memory device comprising three-dimensional memory cell array
SON BYOUNGKEUN19 citations91
US8581321B2Nov 12, 2013
Nonvolatile memory device and method of forming the same
SON BYOUNGKEUN20 citations91
US9947686B2Apr 17, 2018
Semiconductor device including a stack having a sidewall with recessed and protruding portions
SON BYOUNGKEUN9 citations83
US9627396B2Apr 18, 2017
Semiconductor device including a stack having a sidewall with recessed and protruding portions
SON BYOUNGKEUN7 citations83