P

Inventor

SON BYOUNGKEUN

KR47 patents
⚠️ This page may combine multiple inventors who share the name “SON BYOUNGKEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

27 patents
US8383482B2Feb 26, 2013

Three-dimensional semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD39 citations94
US7972955B2Jul 5, 2011

Three dimensional semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations92
US10600801B2Mar 24, 2020

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10038007B2Jul 31, 2018

Three-dimensional semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations84
US9754957B2Sep 5, 2017

Nonvolatile memory devices and methods forming the same

SAMSUNG ELECTRONICS CO LTD6 citations84
US9105736B2Aug 11, 2015

Three-dimensional nonvolatile memory devices including interposed floating gates

SAMSUNG ELECTRONICS CO LTD6 citations84
US8728893B2May 20, 2014

Method of fabricating a three-dimentional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations84
US9905574B2Feb 27, 2018

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US9793292B2Oct 17, 2017

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US10586808B2Mar 10, 2020

Semiconductor device including a stack having a sidewall with recessed and protruding portions

SAMSUNG ELECTRONICS CO LTD1 citations72
US10411031B2Sep 10, 2019

Semiconductor device including a stack having a sidewall with recessed and protruding portions

SAMSUNG ELECTRONICS CO LTD3 citations72
US9093479B2Jul 28, 2015

Method of forming nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US9356159B2May 31, 2016

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD1 citations63
US9240419B2Jan 19, 2016

Three-dimensional semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US9190533B2Nov 17, 2015

Three-dimensional nonvolatile memory devices including interposed floating gates

SAMSUNG ELECTRONICS CO LTD1 citations63
US9047952B2Jun 2, 2015

Nonvolatile memory devices and methods forming the same

SAMSUNG ELECTRONICS CO LTD1 citations63
USRE50089EAug 20, 2024

Three dimensional semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11121154B2Sep 14, 2021

Semiconductor device including a stack having a sidewall with recessed and protruding portions

SAMSUNG ELECTRONICS CO LTD0 citations62
US11107833B2Aug 31, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US10978479B2Apr 13, 2021

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US10748929B2Aug 18, 2020

Three-dimensional semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US10559590B2Feb 11, 2020

Three-dimensional semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US10483278B2Nov 19, 2019

Nonvolatile memory devices and methods forming the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10037888B2Jul 31, 2018

Three-dimensional nonvolatile memory devices including interposed floating gates

SAMSUNG ELECTRONICS CO LTD0 citations52
US9337351B2May 10, 2016

Three-dimensional nonvolatile memory devices including interposed floating gates

SAMSUNG ELECTRONICS CO LTD0 citations52
US9136395B2Sep 15, 2015

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US9490130B2Nov 8, 2016

Method of manufacturing three-dimensional semiconductor memory device in which an oxide layer is formed at bottom of vertical structure of the device

SAMSUNG ELECTRONICS CO LTD0 citations40

LEE CHANGHYUN

8 patents

SON BYOUNGKEUN

6 patents

HAN JINMAN

2 patents

CHANG SUNG-IL

1 patent

HWANG SUNG-MIN

1 patent

SAMSUNG ELECTRONICS COL LTD

1 patent

CHOI SUKHUN

1 patent