P

Inventor

LEE SUN-GHIL

KR28 patents
⚠️ This page may combine multiple inventors who share the name “LEE SUN-GHIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US7323710B2Jan 29, 2008

Fin field effect transistors having multi-layer fin patterns

SAMSUNG ELECTRONICS CO LTD84 citations98
US7842566B2Nov 30, 2010

FinFET and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US8008698B2Aug 30, 2011

Semiconductor memory devices having vertical channel transistors and related methods

SAMSUNG ELECTRONICS CO LTD11 citations84
US7998851B2Aug 16, 2011

Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7683421B2Mar 23, 2010

NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations83
US10256237B2Apr 9, 2019

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US7557388B2Jul 7, 2009

MOSFET formed on a strained silicon layer

SAMSUNG ELECTRONICS CO LTD2 citations63
US7393700B2Jul 1, 2008

Low temperature methods of etching semiconductor substrates

SAMSUNG ELECTRONICS CO LTD4 citations63
US11011516B2May 18, 2021

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US9112055B2Aug 18, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US7871897B2Jan 18, 2011

Method of forming shallow trench isolation regions in devices with NMOS and PMOS regions

SAMSUNG ELECTRONICS CO LTD5 citations61
US7956464B2Jun 7, 2011

Sputtering target and semiconductor device manufactured using the same

SAMSUNG ELECTRONICS CO LTD5 citations60
US10559565B2Feb 11, 2020

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8361860B2Jan 29, 2013

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations52
US7799648B2Sep 21, 2010

Method of forming a MOSFET on a strained silicon layer

SAMSUNG ELECTRONICS CO LTD0 citations52
US8604551B2Dec 10, 2013

Semiconductor device including trenches having particular structures

SAMSUNG ELECTRONICS CO LTD1 citations51

KIM JIN-BUM

3 patents

HYNIX SEMICONDUCTOR INC

2 patents

KIM SEOK-HOON

1 patent

LEE DONG-KAK

1 patent

PARK HEUNG-KYU

1 patent

LEE BYUNG-HAK

1 patent

SON YONG-HOON

1 patent

HYUN SUNG-WOO

1 patent

SIM HYUN-JUN

1 patent