Inventor
LEE SUN-GHIL
KR28 patents
⚠️ This page may combine multiple inventors who share the name “LEE SUN-GHIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7323710B2Jan 29, 2008
Fin field effect transistors having multi-layer fin patterns
SAMSUNG ELECTRONICS CO LTD84 citations98
US7842566B2Nov 30, 2010
FinFET and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US8008698B2Aug 30, 2011
Semiconductor memory devices having vertical channel transistors and related methods
SAMSUNG ELECTRONICS CO LTD11 citations84
US7998851B2Aug 16, 2011
Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7683421B2Mar 23, 2010
NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US10256237B2Apr 9, 2019
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US7557388B2Jul 7, 2009
MOSFET formed on a strained silicon layer
SAMSUNG ELECTRONICS CO LTD2 citations63
US7393700B2Jul 1, 2008
Low temperature methods of etching semiconductor substrates
SAMSUNG ELECTRONICS CO LTD4 citations63
US11011516B2May 18, 2021
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US9112055B2Aug 18, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US7871897B2Jan 18, 2011
Method of forming shallow trench isolation regions in devices with NMOS and PMOS regions
SAMSUNG ELECTRONICS CO LTD5 citations61
US7956464B2Jun 7, 2011
Sputtering target and semiconductor device manufactured using the same
SAMSUNG ELECTRONICS CO LTD5 citations60
US10559565B2Feb 11, 2020
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8361860B2Jan 29, 2013
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US7799648B2Sep 21, 2010
Method of forming a MOSFET on a strained silicon layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US8604551B2Dec 10, 2013
Semiconductor device including trenches having particular structures
SAMSUNG ELECTRONICS CO LTD1 citations51
KIM JIN-BUM
3 patentsUS8877583B2Nov 4, 2014
Method of manufacturing a semiconductor device
KIM JIN-BUM1 citations52
US8409947B2Apr 2, 2013
Method of manufacturing semiconductor device having stress creating layer
KIM JIN-BUM1 citations51
US8716093B2May 6, 2014
Methods of manufacturing a semiconductor device
KIM JIN-BUM0 citations41