Inventor
LIN WUN-JIE
TW87 patents
⚠️ This page may combine multiple inventors who share the name “LIN WUN-JIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
37 patentsUS11626719B2Apr 11, 2023
Electrostatic discharge (ESD) protection circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US9876005B2Jan 23, 2018
SCRS with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9728531B2Aug 8, 2017
Electrostatic discharge device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9559008B2Jan 31, 2017
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10872190B2Dec 22, 2020
Method and system for latch-up prevention
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11862968B2Jan 2, 2024
Circuit and method for high voltage tolerant ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569223B2Jan 31, 2023
Integrated circuit and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854595B2Dec 1, 2020
Electrostatic discharge device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10096589B2Oct 9, 2018
Fin ESD protection diode and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10026727B2Jul 17, 2018
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9812436B2Nov 7, 2017
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9583481B2Feb 28, 2017
Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portion
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9461170B2Oct 4, 2016
FinFET with ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11862960B2Jan 2, 2024
Electrostatic discharge (ESD) protection circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11749673B2Sep 5, 2023
ESD protection device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11728330B2Aug 15, 2023
Electrical passive elements of an ESD power clamp in a backside back end of line (B-BEOL) process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11355491B2Jun 7, 2022
ESD protection device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10777547B2Sep 15, 2020
ESD protection device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9496256B2Nov 15, 2016
Semiconductor device including a vertical gate-all-around transistor and a planar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12009657B2Jun 11, 2024
ESD clamp circuit for low leakage applications
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12100702B2Sep 24, 2024
Method of making semiconductor device electrostatic discharge diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11837598B2Dec 5, 2023
Semiconductor device electrostatic discharge diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9450044B2Sep 20, 2016
Guard ring structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12520579B2Jan 6, 2026
Method and system for manufacturing integrated circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12513999B2Dec 30, 2025
ESD protection device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471387B2Nov 11, 2025
High ESD immunity field-effect device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471326B2Nov 11, 2025
Guard ring and circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12412019B2Sep 9, 2025
Method and system for latch-up prevention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408429B2Sep 2, 2025
Integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12388250B2Aug 12, 2025
Electrostatic discharge (ESD) protection circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191655B2Jan 7, 2025
Circuit and method for high voltage tolerant ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176341B2Dec 24, 2024
Electrostatic discharge (ESD) array with back end of line (BEOL) connection in a carrier wafer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170283B2Dec 17, 2024
Capacitor cell and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087761B2Sep 10, 2024
Electrical passive elements of an ESD power clamp in a backside back end of line (B-BEOL) process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12033962B2Jul 9, 2024
Electrostatic discharge (ESD) array with circuit controlled switches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027525B2Jul 2, 2024
Integrated circuit device, method, and system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855076B2Dec 26, 2023
Electrostatic discharge (ESD) array with back end of line (BEOL) connection in a carrier wafer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
TAIWAN SEMICONDUCTOR MFG
9 patentsUS8928093B2Jan 6, 2015
FinFET body contact and method of making same
TAIWAN SEMICONDUCTOR MFG14 citations92
US9397098B2Jul 19, 2016
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG13 citations91
US9318621B2Apr 19, 2016
Rotated STI diode on FinFET technology
TAIWAN SEMICONDUCTOR MFG7 citations84
US9312384B2Apr 12, 2016
FinFET body contact and method of making same
TAIWAN SEMICONDUCTOR MFG10 citations84
US9190519B2Nov 17, 2015
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG8 citations84
US9147676B2Sep 29, 2015
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG5 citations84
US9117669B2Aug 25, 2015
Apparatus for ESD protection
TAIWAN SEMICONDUCTOR MFG13 citations84
US9349719B2May 24, 2016
Semiconductor device
TAIWAN SEMICONDUCTOR MFG3 citations73
US8664723B1Mar 4, 2014
Integrated circuit structures having base resistance tuning regions and methods for forming the same
TAIWAN SEMICONDUCTOR MFG5 citations73
LIN WUN-JIE
2 patentsLO CHING-HSIUNG
1 patentTAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD
1 patentShowing the top 50 of 87 patents by PatentIndex Score.