Inventor
TANZAWA KATSUJIRO
JP12 patents
⚠️ This page may combine multiple inventors who share the name “TANZAWA KATSUJIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
11 patentsUS4878957ANov 7, 1989
Dielectrically isolated semiconductor substrate
TOSHIBA KK90 citations96
US7057259B2Jun 6, 2006
Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them
TOSHIBA KK35 citations92
US5688702ANov 18, 1997
Process of making a semiconductor device using a silicon-on-insulator substrate
TOSHIBA KK28 citations92
US5512774AApr 30, 1996
Dielectrically isolated substrate and semiconductor device using the same
TOSHIBA KK42 citations92
US5332920AJul 26, 1994
Dielectrically isolated high and low voltage substrate regions
TOSHIBA KK32 citations92
US5097314AMar 17, 1992
Dielectrically isolated substrate with isolated high and low breakdown voltage elements
TOSHIBA KK24 citations92
US5049968ASep 17, 1991
Dielectrically isolated substrate and semiconductor device using the same
TOSHIBA KK24 citations92
US7314766B2Jan 1, 2008
Semiconductor wafer treatment method, semiconductor wafer inspection method, semiconductor device development method and semiconductor wafer treatment apparatus
TOSHIBA KK9 citations83
US7285825B2Oct 23, 2007
Element formation substrate for forming semiconductor device
TOSHIBA KK6 citations74
US7510945B2Mar 31, 2009
Element formation substrate, method of manufacturing the same, and semiconductor device
TOSHIBA KK5 citations63
US7531462B2May 12, 2009
Method of inspecting semiconductor wafer
TOSHIBA KK0 citations41