US7700381B2ExpiredUtilityPatentIndex 79
Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them
Est. expiryMar 21, 2021(expired)· nominal 20-yr term from priority
Inventors:ARIKADO TSUNETOSHIIWASE MASAONADAHARA SOICHIUDO YUSOUSHIKU YUKIHIRONITTA SHINICHIMIYASHITA MORIYASUGAMOTO JUNJIYAMADA HIROAKINAGANO HAJIMETANZAWA KATSUJIROMATSUSHITA HIROSHITSUCHIYA NORIHIKOOKUMURA KATSUYA
H10W 46/401H10W 46/201H10W 46/106H10W 46/103H10W 46/00H10P 95/00Y10S438/974
79
PatentIndex Score
9
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32
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1
Claims
Abstract
A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.
Claims
exact text as granted — not AI-modified1. A method of manufacturing a semiconductor wafer, comprising: preparing said wafer sliced from a monocrystalline ingot; removing undulation on a principal plane of said wafer by carrying out an etching process on said wafer, said etching process using an alkali solution and involving different etching speeds depending on crystal orientations; measuring a crystal orientation of said wafer according to etch pits formed on said principal plane by said etching process, said etch pits being defined by second-orientation crystal faces that are different from first-orientation crystal faces exposed at said principal plane; forming a reference ID mark on said wafer, to indicate the measured crystal orientation of said wafer; and removing said etch pits.
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