Inventor
TORIUMI AKIRA
JP24 patents
⚠️ This page may combine multiple inventors who share the name “TORIUMI AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
11 patentsUS6320220B1Nov 20, 2001
Quantum tunneling effect device and semiconductor composite substrate
TOSHIBA KK97 citations98
US6191463B1Feb 20, 2001
Apparatus and method of improving an insulating film on a semiconductor device
TOSHIBA KK128 citations98
US6111288AAug 29, 2000
Quantum tunneling effect device and semiconductor composite substrate
TOSHIBA KK88 citations98
US6642575B1Nov 4, 2003
MOS transistor with vertical columnar structure
TOSHIBA KK57 citations96
US5463234AOct 31, 1995
High-speed semiconductor gain memory cell with minimal area occupancy
TOSHIBA KK98 citations95
US6208002B1Mar 27, 2001
Field effect transistor and manufacturing method thereof
TOSHIBA KK25 citations92
US6060748AMay 9, 2000
Semiconductor integrated circuit device using a silicon-on-insulator substrate
TOSHIBA KK24 citations92
US5963471AOct 5, 1999
Semiconductor device
TOSHIBA KK23 citations91
US5754077AMay 19, 1998
Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET
TOSHIBA KK8 citations72
US5679961AOct 21, 1997
Correlation tunnel device
TOSHIBA KK14 citations69
US6690030B2Feb 10, 2004
Semiconductor device with negative differential resistance characteristics
TOSHIBA KK6 citations62
JAPAN SCIENCE & TECH AGENCY
8 patentsUS9306026B2Apr 5, 2016
Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same
JAPAN SCIENCE & TECH AGENCY41 citations94
US9722026B2Aug 1, 2017
Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure
JAPAN SCIENCE & TECH AGENCY8 citations79
US9691620B2Jun 27, 2017
Semiconductor structure having film including germanium oxide on germanium layer and method of fabricating the same
JAPAN SCIENCE & TECH AGENCY3 citations72
US11157805B2Oct 26, 2021
Neuron circuit, system, and switch circuit
JAPAN SCIENCE & TECH AGENCY2 citations71
US12095348B2Sep 17, 2024
Current sensor and power conversion circuit
JAPAN SCIENCE & TECH AGENCY0 citations61
US10748776B2Aug 18, 2020
Semiconductor device including contact structure
JAPAN SCIENCE & TECH AGENCY0 citations50
US10109710B2Oct 23, 2018
Semiconductor device having germanium layer as channel region and method for manufacturing the same
JAPAN SCIENCE & TECH AGENCY1 citations50
US9647074B2May 9, 2017
Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated
JAPAN SCIENCE & TECH AGENCY0 citations50
RENESAS TECH CORP
3 patentsUS7671426B2Mar 2, 2010
Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film
RENESAS TECH CORP4 citations62
US7507632B2Mar 24, 2009
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP2 citations62
US7397094B2Jul 8, 2008
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP1 citations52