Inventor
BRONNER GARY BELA
US38 patents
⚠️ This page may combine multiple inventors who share the name “BRONNER GARY BELA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEFEI RELIANCE MEMORY LTD
16 patentsUS10037801B2Jul 31, 2018
2T-1R architecture for resistive RAM
HEFEI RELIANCE MEMORY LTD14 citations92
US10622062B2Apr 14, 2020
2T-1R architecture for resistive ram
HEFEI RELIANCE MEMORY LTD5 citations84
US10388375B2Aug 20, 2019
Fast read speed memory device
HEFEI RELIANCE MEMORY LTD4 citations84
US10199098B2Feb 5, 2019
2T-1R architecture for resistive RAM
HEFEI RELIANCE MEMORY LTD9 citations84
US11651820B2May 16, 2023
Fast read speed memory device
HEFEI RELIANCE MEMORY LTD1 citations73
US11653580B2May 16, 2023
Non-volatile memory structure with positioned doping
HEFEI RELIANCE MEMORY LTD2 citations73
US11018295B2May 25, 2021
Non-volatile memory structure with positioned doping
HEFEI RELIANCE MEMORY LTD4 citations73
US10825518B2Nov 3, 2020
Fast read speed memory device
HEFEI RELIANCE MEMORY LTD2 citations73
US10366751B2Jul 30, 2019
Resistance memory cell
HEFEI RELIANCE MEMORY LTD1 citations73
US11984163B2May 14, 2024
Processing unit with fast read speed memory device
HEFEI RELIANCE MEMORY LTD0 citations63
US11257544B2Feb 22, 2022
Fast read speed memory device
HEFEI RELIANCE MEMORY LTD0 citations63
US11963465B2Apr 16, 2024
Non-volatile memory structure with positioned doping
HEFEI RELIANCE MEMORY LTD0 citations62
US11908515B2Feb 20, 2024
2T-1R architecture for resistive ram
HEFEI RELIANCE MEMORY LTD0 citations62
US11568929B2Jan 31, 2023
2T-1R architecture for resistive RAM
HEFEI RELIANCE MEMORY LTD0 citations62
US11081176B2Aug 3, 2021
2T-1R architecture for resistive RAM
HEFEI RELIANCE MEMORY LTD0 citations62
US10614883B2Apr 7, 2020
Resistance memory cell
HEFEI RELIANCE MEMORY LTD0 citations52
IBM
13 patentsUS6087225AJul 11, 2000
Method for dual gate oxide dual workfunction CMOS
IBM92 citations98
US5876788AMar 2, 1999
High dielectric TiO2 -SiN composite films for memory applications
IBM97 citations96
US6638815B1Oct 28, 2003
Formation of self-aligned vertical connector
IBM20 citations93
US6562634B2May 13, 2003
Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method of forming the same
IBM26 citations92
US6084276AJul 4, 2000
Threshold voltage tailoring of corner of MOSFET device
IBM32 citations92
US5994202ANov 30, 1999
Threshold voltage tailoring of the corner of a MOSFET device
IBM24 citations92
US6974991B2Dec 13, 2005
DRAM cell with buried collar and self-aligned buried strap
IBM12 citations81
US6014310AJan 11, 2000
High dielectric TiO2 -SiN composite films for memory applications
IBM14 citations81
US5937289AAug 10, 1999
Providing dual work function doping
IBM14 citations74
US5923991AJul 13, 1999
Methods to prevent divot formation in shallow trench isolation areas
IBM11 citations74
US6034877AMar 7, 2000
Semiconductor memory array having sublithographic spacing between adjacement trenches and method for making the same
IBM15 citations72
US6190959B1Feb 20, 2001
Semiconductor memory array having sublithographic spacing between adjacent trenches and method for making the same
IBM5 citations61
US8039888B2Oct 18, 2011
Conductive spacers for semiconductor devices and methods of forming
IBM0 citations51
RAMBUS INC
7 patentsUS9230641B2Jan 5, 2016
Fast read speed memory device
RAMBUS INC12 citations93
US9941005B2Apr 10, 2018
Fast read speed memory device
RAMBUS INC4 citations84
US9934851B2Apr 3, 2018
Resistance memory cell
RAMBUS INC11 citations84
US9490009B2Nov 8, 2016
Fast read speed memory device
RAMBUS INC4 citations84
US11651823B2May 16, 2023
Fractional program commands for memory devices
RAMBUS INC0 citations62
US10861554B2Dec 8, 2020
Fractional program commands for memory devices
RAMBUS INC0 citations52
US9570165B2Feb 14, 2017
1D-2R memory architecture
RAMBUS INC0 citations49