Inventor
QUEK ELGIN KIOK BOONE
SG46 patents
⚠️ This page may combine multiple inventors who share the name “QUEK ELGIN KIOK BOONE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
33 patentsUS9673388B2Jun 6, 2017
Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD16 citations84
US9620642B2Apr 11, 2017
FinFET with isolation
GLOBALFOUNDRIES SG PTE LTD11 citations84
US10424568B1Sep 24, 2019
Image sensor with stacked SPAD and method for producing the same
GLOBALFOUNDRIES SG PTE LTD10 citations83
US9583168B1Feb 28, 2017
Drive current enhancement for integrated circuit memory structures
GLOBALFOUNDRIES SG PTE LTD14 citations79
US10163979B2Dec 25, 2018
Selector-resistive random access memory cell
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9728721B2Aug 8, 2017
Resistive memory device
GLOBALFOUNDRIES SG PTE LTD2 citations73
US9647035B2May 9, 2017
Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9484530B2Nov 1, 2016
Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD6 citations73
US9362374B2Jun 7, 2016
Simple and cost-free MTP structure
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9312268B2Apr 12, 2016
Integrated circuits with FinFET nonvolatile memory
GLOBALFOUNDRIES SG PTE LTD6 citations72
US10121959B1Nov 6, 2018
FDSOI STT-MRAM design
GLOBALFOUNDRIES SG PTE LTD3 citations71
US10020372B1Jul 10, 2018
Method to form thicker erase gate poly superflash NVM
GLOBALFOUNDRIES SG PTE LTD5 citations71
US9653137B2May 16, 2017
STT-MRAM bitcell for embedded flash applications
GLOBALFOUNDRIES SG PTE LTD6 citations69
US11646360B2May 9, 2023
OTP-MTP on FDSOI architecture and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations63
US11355599B2Jun 7, 2022
Devices with lower resistance and improved breakdown and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations63
US10720513B2Jul 21, 2020
OTP-MTP on FDSOI architecture and method for producing the same
GLOBALFOUNDRIES SG PTE LTD1 citations63
US10559691B2Feb 11, 2020
Compact OTP/MTP memory device including a cavity formed between a substrate and a buried oxide layer
GLOBALFOUNDRIES SG PTE LTD1 citations63
US10170625B2Jan 1, 2019
Method for manufacturing a compact OTP/MTP technology
GLOBALFOUNDRIES SG PTE LTD1 citations63
US9263665B1Feb 16, 2016
Two-bits per cell structure with spin torque transfer magnetic random access memory and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD2 citations63
US9171855B2Oct 27, 2015
Three-dimensional non-volatile memory
GLOBALFOUNDRIES SG PTE LTD3 citations63
US10388852B2Aug 20, 2019
Magnetic tunnel junction element
GLOBALFOUNDRIES SG PTE LTD1 citations62
US10186554B2Jan 22, 2019
Vertical random access memory with selectors
GLOBALFOUNDRIES SG PTE LTD1 citations62
US7964894B2Jun 21, 2011
Integrated circuit system employing stress memorization transfer
GLOBALFOUNDRIES SG PTE LTD4 citations62
US11094696B2Aug 17, 2021
Methods of forming a thyristor-based random access memory using fin structures and elevated layers
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10804323B2Oct 13, 2020
Selector-resistive random access memory cell
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10790366B2Sep 29, 2020
Devices with lower resistance and improved breakdown and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10333065B2Jun 25, 2019
Resistive memory device
GLOBALFOUNDRIES SG PTE LTD0 citations52
US9397146B2Jul 19, 2016
Vertical random access memory with selectors
GLOBALFOUNDRIES SG PTE LTD0 citations52
US9343587B2May 17, 2016
Field effect transistor with self-adjusting threshold voltage
GLOBALFOUNDRIES SG PTE LTD0 citations52
US9444041B2Sep 13, 2016
Back-gated non-volatile memory cell
GLOBALFOUNDRIES SG PTE LTD1 citations51
US10522614B2Dec 31, 2019
Method to fabricate capacitance-matching FET and related device
GLOBALFOUNDRIES SG PTE LTD0 citations45
US10643725B2May 5, 2020
Multi-time programmable device
GLOBALFOUNDRIES SG PTE LTD0 citations42
US10797223B2Oct 6, 2020
Integrated circuits with magnetic random access memory (MRAM) devices and methods for fabricating such devices
GLOBALFOUNDRIES SG PTE LTD0 citations40
CHARTERED SEMICONDUCTOR MFG
11 patentsUS7867835B2Jan 11, 2011
Integrated circuit system for suppressing short channel effects
CHARTERED SEMICONDUCTOR MFG116 citations97
US6468851B1Oct 22, 2002
Method of fabricating CMOS device with dual gate electrode
CHARTERED SEMICONDUCTOR MFG55 citations91
US6277710B1Aug 21, 2001
Method of forming shallow trench isolation
CHARTERED SEMICONDUCTOR MFG23 citations90
US5744853AApr 28, 1998
Three dimensional polysilicon capacitor for high density integrated circuit applications
CHARTERED SEMICONDUCTOR MFG18 citations84
US7759207B2Jul 20, 2010
Integrated circuit system employing stress memorization transfer
CHARTERED SEMICONDUCTOR MFG8 citations83
US6303449B1Oct 16, 2001
Method to form self-aligned elevated source/drain by selective removal of gate dielectric in the source/drain region followed by poly deposition and CMP
CHARTERED SEMICONDUCTOR MFG12 citations74
US7692213B2Apr 6, 2010
Integrated circuit system employing a condensation process
CHARTERED SEMICONDUCTOR MFG6 citations72
US7994010B2Aug 9, 2011
Process for fabricating a semiconductor device having embedded epitaxial regions
CHARTERED SEMICONDUCTOR MFG2 citations61
US7833888B2Nov 16, 2010
Integrated circuit system employing grain size enlargement
CHARTERED SEMICONDUCTOR MFG0 citations52
US7795104B2Sep 14, 2010
Method for fabricating device structures having a variation in electrical conductivity
CHARTERED SEMICONDUCTOR MFG0 citations52
US7816274B2Oct 19, 2010
Methods for normalizing strain in a semiconductor device
CHARTERED SEMICONDUCTOR MFG0 citations40