P

Inventor

QUEK ELGIN KIOK BOONE

SG46 patents
⚠️ This page may combine multiple inventors who share the name “QUEK ELGIN KIOK BOONE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES SG PTE LTD

33 patents
US9673388B2Jun 6, 2017

Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD16 citations84
US9620642B2Apr 11, 2017

FinFET with isolation

GLOBALFOUNDRIES SG PTE LTD11 citations84
US10424568B1Sep 24, 2019

Image sensor with stacked SPAD and method for producing the same

GLOBALFOUNDRIES SG PTE LTD10 citations83
US9583168B1Feb 28, 2017

Drive current enhancement for integrated circuit memory structures

GLOBALFOUNDRIES SG PTE LTD14 citations79
US10163979B2Dec 25, 2018

Selector-resistive random access memory cell

GLOBALFOUNDRIES SG PTE LTD4 citations73
US9728721B2Aug 8, 2017

Resistive memory device

GLOBALFOUNDRIES SG PTE LTD2 citations73
US9647035B2May 9, 2017

Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same

GLOBALFOUNDRIES SG PTE LTD4 citations73
US9484530B2Nov 1, 2016

Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD6 citations73
US9362374B2Jun 7, 2016

Simple and cost-free MTP structure

GLOBALFOUNDRIES SG PTE LTD4 citations73
US9312268B2Apr 12, 2016

Integrated circuits with FinFET nonvolatile memory

GLOBALFOUNDRIES SG PTE LTD6 citations72
US10121959B1Nov 6, 2018

FDSOI STT-MRAM design

GLOBALFOUNDRIES SG PTE LTD3 citations71
US10020372B1Jul 10, 2018

Method to form thicker erase gate poly superflash NVM

GLOBALFOUNDRIES SG PTE LTD5 citations71
US9653137B2May 16, 2017

STT-MRAM bitcell for embedded flash applications

GLOBALFOUNDRIES SG PTE LTD6 citations69
US11646360B2May 9, 2023

OTP-MTP on FDSOI architecture and method for producing the same

GLOBALFOUNDRIES SG PTE LTD0 citations63
US11355599B2Jun 7, 2022

Devices with lower resistance and improved breakdown and method for producing the same

GLOBALFOUNDRIES SG PTE LTD0 citations63
US10720513B2Jul 21, 2020

OTP-MTP on FDSOI architecture and method for producing the same

GLOBALFOUNDRIES SG PTE LTD1 citations63
US10559691B2Feb 11, 2020

Compact OTP/MTP memory device including a cavity formed between a substrate and a buried oxide layer

GLOBALFOUNDRIES SG PTE LTD1 citations63
US10170625B2Jan 1, 2019

Method for manufacturing a compact OTP/MTP technology

GLOBALFOUNDRIES SG PTE LTD1 citations63
US9263665B1Feb 16, 2016

Two-bits per cell structure with spin torque transfer magnetic random access memory and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD2 citations63
US9171855B2Oct 27, 2015

Three-dimensional non-volatile memory

GLOBALFOUNDRIES SG PTE LTD3 citations63
US10388852B2Aug 20, 2019

Magnetic tunnel junction element

GLOBALFOUNDRIES SG PTE LTD1 citations62
US10186554B2Jan 22, 2019

Vertical random access memory with selectors

GLOBALFOUNDRIES SG PTE LTD1 citations62
US7964894B2Jun 21, 2011

Integrated circuit system employing stress memorization transfer

GLOBALFOUNDRIES SG PTE LTD4 citations62
US11094696B2Aug 17, 2021

Methods of forming a thyristor-based random access memory using fin structures and elevated layers

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10804323B2Oct 13, 2020

Selector-resistive random access memory cell

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10790366B2Sep 29, 2020

Devices with lower resistance and improved breakdown and method for producing the same

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10333065B2Jun 25, 2019

Resistive memory device

GLOBALFOUNDRIES SG PTE LTD0 citations52
US9397146B2Jul 19, 2016

Vertical random access memory with selectors

GLOBALFOUNDRIES SG PTE LTD0 citations52
US9343587B2May 17, 2016

Field effect transistor with self-adjusting threshold voltage

GLOBALFOUNDRIES SG PTE LTD0 citations52
US9444041B2Sep 13, 2016

Back-gated non-volatile memory cell

GLOBALFOUNDRIES SG PTE LTD1 citations51
US10522614B2Dec 31, 2019

Method to fabricate capacitance-matching FET and related device

GLOBALFOUNDRIES SG PTE LTD0 citations45
US10643725B2May 5, 2020

Multi-time programmable device

GLOBALFOUNDRIES SG PTE LTD0 citations42
US10797223B2Oct 6, 2020

Integrated circuits with magnetic random access memory (MRAM) devices and methods for fabricating such devices

GLOBALFOUNDRIES SG PTE LTD0 citations40

CHARTERED SEMICONDUCTOR MFG

11 patents
US7867835B2Jan 11, 2011

Integrated circuit system for suppressing short channel effects

CHARTERED SEMICONDUCTOR MFG116 citations97
US6468851B1Oct 22, 2002

Method of fabricating CMOS device with dual gate electrode

CHARTERED SEMICONDUCTOR MFG55 citations91
US6277710B1Aug 21, 2001

Method of forming shallow trench isolation

CHARTERED SEMICONDUCTOR MFG23 citations90
US5744853AApr 28, 1998

Three dimensional polysilicon capacitor for high density integrated circuit applications

CHARTERED SEMICONDUCTOR MFG18 citations84
US7759207B2Jul 20, 2010

Integrated circuit system employing stress memorization transfer

CHARTERED SEMICONDUCTOR MFG8 citations83
US6303449B1Oct 16, 2001

Method to form self-aligned elevated source/drain by selective removal of gate dielectric in the source/drain region followed by poly deposition and CMP

CHARTERED SEMICONDUCTOR MFG12 citations74
US7692213B2Apr 6, 2010

Integrated circuit system employing a condensation process

CHARTERED SEMICONDUCTOR MFG6 citations72
US7994010B2Aug 9, 2011

Process for fabricating a semiconductor device having embedded epitaxial regions

CHARTERED SEMICONDUCTOR MFG2 citations61
US7833888B2Nov 16, 2010

Integrated circuit system employing grain size enlargement

CHARTERED SEMICONDUCTOR MFG0 citations52
US7795104B2Sep 14, 2010

Method for fabricating device structures having a variation in electrical conductivity

CHARTERED SEMICONDUCTOR MFG0 citations52
US7816274B2Oct 19, 2010

Methods for normalizing strain in a semiconductor device

CHARTERED SEMICONDUCTOR MFG0 citations40

TAN SHYUE SENG

1 patent

YEONG SAI HOOI

1 patent