P

Inventor

KITAGAWA EIJI

JP105 patents
⚠️ This page may combine multiple inventors who share the name “KITAGAWA EIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

19 patents
US7768824B2Aug 3, 2010

Magnetoresistive element and magnetoresistive random access memory including the same

TOSHIBA KK58 citations98
US7663197B2Feb 16, 2010

Magnetoresistive element

TOSHIBA KK97 citations98
US7596015B2Sep 29, 2009

Magnetoresistive element and magnetic memory

TOSHIBA KK94 citations98
US9117995B2Aug 25, 2015

Magnetoresistance element and magnetic memory

TOSHIBA KK39 citations94
US8363462B2Jan 29, 2013

Magnetoresistive element

TOSHIBA KK21 citations93
US8036025B2Oct 11, 2011

Magnetoresistive element

TOSHIBA KK33 citations93
US7957184B2Jun 7, 2011

Magnetoresistive element and magnetoresistive random access memory including the same

TOSHIBA KK17 citations93
US7924607B2Apr 12, 2011

Magnetoresistance effect element and magnetoresistive random access memory using the same

TOSHIBA KK38 citations93
US7920361B2Apr 5, 2011

Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc

TOSHIBA KK23 citations93
US8994131B2Mar 31, 2015

Magnetic memory

TOSHIBA KK21 citations92
US8680633B1Mar 25, 2014

Magnetoresistive element and magnetic memory

TOSHIBA KK24 citations92
US9647203B2May 9, 2017

Magnetoresistive element having a magnetic layer including O

TOSHIBA KK16 citations84
US9608199B1Mar 28, 2017

Magnetic memory device

TOSHIBA KK12 citations84
US9466350B2Oct 11, 2016

Magnetic memory device

TOSHIBA KK8 citations84
US9178133B2Nov 3, 2015

Magnetoresistive element using specific underlayer material

TOSHIBA KK9 citations84
US8937832B2Jan 20, 2015

Magnetic memory

TOSHIBA KK12 citations84
US7787288B2Aug 31, 2010

Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory

TOSHIBA KK13 citations84
US9508926B2Nov 29, 2016

Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium

TOSHIBA KK15 citations83
US7518906B2Apr 14, 2009

Magneto-resistive element

TOSHIBA KK6 citations74

TOSHIBA MEMORY CORP

5 patents

KITAGAWA EIJI

3 patents

NAGASE TOSHIHIKO

3 patents

MINOLTA CO LTD

3 patents

KIOXIA CORP

3 patents

DAIBOU TADAOMI

2 patents

YOSHIKAWA MASATOSHI

2 patents

KAI TADASHI

2 patents

IKEDA TAKURO

1 patent

ASHIMORI IND CO LTD

1 patent

KATO YUSHI

1 patent

OZEKI JYUNICHI

1 patent

YANAGI SATOSHI

1 patent

SHIMOMURA NAOHARU

1 patent

FUJITSU LTD

1 patent

NISHIYAMA KATSUYA

1 patent

Showing the top 50 of 105 patents by PatentIndex Score.