Magneto-resistive element

Abstract

A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

1. A magneto-resistive element comprising:
 a free layer whose magnetized state changes; and a pinned layer whose magnetized state is fixed, 
 the free layer comprising: 
 first and second ferromagnetic layers; and a non-magnetic layer which is arranged between the first and second ferromagnetic layers, 
 wherein an intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a direction of hard magnetization opens. 
 
   
   
     2. The magneto-resistive element according to  claim 1 , wherein the non-magnetic layer has a thickness not less than 1 nm and not more than 5 nm. 
   
   
     3. The magneto-resistive element according to  claim 1 , wherein the first and second ferromagnetic layers have different values of multiplication of magnetization and thickness and are not magnetized in anti-parallel directions when a magnetic field only in the direction of hard magnetization is applied. 
   
   
     4. The magneto-resistive element according to  claim 3 , wherein a relationship between hj and p is expressed as 12p 4 ≦hj≦40p 4  by using a parameter hj and a ratio p=t′/t, where the parameter hj is expressed as hj=J/(Hk·Ms·t) by using an anisotropy field intensity Hk of one of the first and second ferromagnetic layers that is larger in an anisotropy field intensity, a magnetization intensity Ms, film thickness t, and coupling energy J of the first and second ferromagnetic layers, and the ratio p indicates a ratio of a film thickness t′ of one of the first and second ferromagnetic layer that has a smaller anisotropy field intensity with respect to a film thickness t of the other that has a larger anisotropy field intensity. 
   
   
     5. The magneto-resistive element according to  claim 4 , wherein a value of the anisotropy field intensity depends on an M s t product. 
   
   
     6. The magneto-resistive element according to  claim 1 , wherein the free layer has a shape that is asymmetrical about a centerline in a direction of easy magnetization. 
   
   
     7. The magneto-resistive element according to  claim 6 , wherein corners of the free layer are all rounded off. 
   
   
     8. The magneto-resistive element according to  claim 1 , wherein the free layer has two-fold rotational symmetry and has a shape that is not mirror-symmetrical about a centerline extending in a direction of easy magnetization and a centerline extending in the direction of hard magnetization. 
   
   
     9. The magneto-resistive element according to  claim 8 , wherein corners of the free layer are all rounded off. 
   
   
     10. The magneto-resistive element according to  claim 1 , wherein the first and second ferromagnetic layers are each made of a material comprising one of Fe, Co and Ni, an alloy including at least one of Fe, Co and Ni, or a lamination including at least one of the material and the alloy. 
   
   
     11. The magneto-resistive element according to  claim 1 , wherein the non-magnetic layer is made of a material comprising one of Ru, Ir, Rh and Cu, or an alloy including at least one of Ru, Ir, Rh and Cu. 
   
   
     12. A magneto-resistive element comprising:
 a free layer whose magnetized state changes; and a pinned layer whose magnetized state is fixed, 
 the free layer comprising: 
 first and second ferromagnetic layers; and a non-magnetic layer which is arranged between the first and second ferromagnetic layers, 
 wherein an intensity of exchange coupling between the first and second ferromagnetic layers is set so that a switching field along the direction of easy magnetization have a local minimum with increasing a magnetic field in the direction of hard magnetization. 
 
   
   
     13. A magnetic random access memory comprising:
 a magneto-resistive element; and 
 first and second lines which are crossed each other, 
 wherein the magneto-resistive element is provided between the first and second lines, and comprises a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed, 
 wherein the free layer comprises: 
 first and second ferromagnetic layers; and a non-magnetic layer which is arranged between the first and second ferromagnetic layers, 
 wherein an intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a direction of hard magnetization opens. 
 
   
   
     14. A method of writing data to a magneto-resistive element, comprising:
 generating a magnetic field in a direction of hard magnetization and a magnetic field in a direction of easy magnetization; and 
 terminating the magnetic field in the direction of hard magnetization and then terminating the magnetic field in the direction of easy magnetization, 
 the magneto-resistive element comprising: 
 a free layer whose magnetized state changes; and a pinned layer whose magnetized state is fixed, 
 the free layer comprising: 
 first and second ferromagnetic layers; and a non-magnetic layer which is arranged between the first and second ferromagnetic layers, 
 wherein an intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a direction of hard magnetization opens. 
 
   
   
     15. The method according to  claim 14 , wherein, after the magnetic field in the direction of hard magnetization is generated, the magnetic field in the direction of easy magnetization is generated. 
   
   
     16. The method according to  claim 14 , wherein, after the magnetic field in the direction of easy magnetization is generated, the magnetic field in the direction of hard magnetization is generated. 
   
   
     17. The method according to  claim 14 , wherein the magnetic field in the direction of hard magnetization and the magnetic field in the direction of easy magnetization are generated simultaneously. 
   
   
     18. The method according to  claim 14 , wherein the magneto-resistive element has a synthetic anti-ferromagnetic structure.