Inventor
IKEGAWA SUMIO
US52 patents
⚠️ This page may combine multiple inventors who share the name “IKEGAWA SUMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
25 patentsUS8009465B2Aug 30, 2011
Magnetoresistive element
TOSHIBA KK55 citations98
US8014193B2Sep 6, 2011
Magnetoresistance effect element and magnetic random access memory
TOSHIBA KK41 citations93
US7518907B2Apr 14, 2009
Magnetoresistive element
TOSHIBA KK15 citations93
US7355884B2Apr 8, 2008
Magnetoresistive element
TOSHIBA KK28 citations93
US7038939B2May 2, 2006
Magneto-resistance effect element and magnetic memory
TOSHIBA KK32 citations93
US4855992AAug 8, 1989
Reversible optical recording medium with an optothermally deformable recording layer
TOSHIBA KK24 citations92
US8347175B2Jan 1, 2013
Magnetic memory
TOSHIBA KK11 citations84
US7894246B2Feb 22, 2011
Magnetoresistive element and magnetic memory
TOSHIBA KK7 citations84
US7245524B2Jul 17, 2007
Magnetic memory device and write method of magnetic memory device
TOSHIBA KK16 citations84
US7193890B2Mar 20, 2007
Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method
TOSHIBA KK12 citations84
US7898846B2Mar 1, 2011
Magnetoresistive element
TOSHIBA KK6 citations74
US7518906B2Apr 14, 2009
Magneto-resistive element
TOSHIBA KK6 citations74
US7411263B2Aug 12, 2008
Magnetic memory device
TOSHIBA KK6 citations74
US7203088B2Apr 10, 2007
Magnetoresistive random access memory and driving method thereof
TOSHIBA KK7 citations74
US4839861AJun 13, 1989
Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same
TOSHIBA KK16 citations74
US5629267AMay 13, 1997
Superconducting element having an intermediate layer with multiple fluorite blocks
TOSHIBA KK8 citations73
US4922462AMay 1, 1990
Reversible memory structure for optical reading and writing and which is capable of erasure
TOSHIBA KK14 citations73
US7875903B2Jan 25, 2011
Magnetic memory device
TOSHIBA KK3 citations63
US7414880B2Aug 19, 2008
Magnetoresistive effect element and magnetic memory
TOSHIBA KK3 citations63
US7015472B2Mar 21, 2006
Infrared ray detecting type imaging device
TOSHIBA KK1 citations63
US6984856B1Jan 10, 2006
Infrared ray detecting type imaging device
TOSHIBA KK2 citations63
US8349622B2Jan 8, 2013
Magneto-resistive element
TOSHIBA KK1 citations52
US7525837B2Apr 28, 2009
Magnetoresistive effect element and magnetic memory
TOSHIBA KK1 citations52
US7266011B2Sep 4, 2007
Magneto-resistance effect element and magnetic memory
TOSHIBA KK0 citations52
US7172920B2Feb 6, 2007
Method of manufacturing an image device
TOSHIBA KK0 citations52
EVERSPIN TECHNOLOGIES INC
13 patentsUS11637235B2Apr 25, 2023
In-plane spin orbit torque magnetoresistive stack/structure and methods therefor
EVERSPIN TECHNOLOGIES INC2 citations73
US11127896B2Sep 21, 2021
Shared spin-orbit-torque write line in a spin-orbit-torque MRAM
EVERSPIN TECHNOLOGIES INC4 citations73
US10622552B2Apr 14, 2020
Magnetoresistive stacks and methods therefor
EVERSPIN TECHNOLOGIES INC4 citations73
US10255961B2Apr 9, 2019
Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
EVERSPIN TECHNOLOGIES INC2 citations73
US11264564B2Mar 1, 2022
Magnetoresistive devices and methods therefor
EVERSPIN TECHNOLOGIES INC2 citations70
US11488647B2Nov 1, 2022
Stacked magnetoresistive structures and methods therefor
EVERSPIN TECHNOLOGIES INC4 citations69
US12167702B2Dec 10, 2024
Magnetoresistive stack/structure and methods therefor
EVERSPIN TECHNOLOGIES INC0 citations62
US12029137B2Jul 2, 2024
Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor
EVERSPIN TECHNOLOGIES INC0 citations62
US11189781B2Nov 30, 2021
Magnetoresistive stack/structure including metal insertion substance
EVERSPIN TECHNOLOGIES INC1 citations62
US12437828B2Oct 7, 2025
Systems and methods for monitoring and managing memory devices
EVERSPIN TECHNOLOGIES INC0 citations61
US11798646B2Oct 24, 2023
Systems and methods for monitoring and managing memory devices
EVERSPIN TECHNOLOGIES INC0 citations61
US10825500B2Nov 3, 2020
Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
EVERSPIN TECHNOLOGIES INC0 citations52
US12477955B2Nov 18, 2025
Magnetoresistive stack and methods therefor
EVERSPIN TECHNOLOGIES INC0 citations47
NAKAYAMA MASAHIKO
3 patentsUS8279663B2Oct 2, 2012
Magnetoresistance effect element and magnetic random access memory
NAKAYAMA MASAHIKO33 citations92
US8120948B2Feb 21, 2012
Data writing method for magnetoresistive effect element and magnetic memory
NAKAYAMA MASAHIKO4 citations63
US8634238B2Jan 21, 2014
Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof
NAKAYAMA MASAHIKO2 citations62
AIKAWA HISANORI
3 patentsOZEKI JYUNICHI
1 patentSHIMOMURA NAOHARU
1 patentNAGAMINE MAKOTO
1 patentKISHI TATSUYA
1 patentUEDA TOMOMASA
1 patentHOSOTANI KEIJI
1 patentShowing the top 50 of 52 patents by PatentIndex Score.