P

Inventor

IKEGAWA SUMIO

US52 patents
⚠️ This page may combine multiple inventors who share the name “IKEGAWA SUMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

25 patents
US8009465B2Aug 30, 2011

Magnetoresistive element

TOSHIBA KK55 citations98
US8014193B2Sep 6, 2011

Magnetoresistance effect element and magnetic random access memory

TOSHIBA KK41 citations93
US7518907B2Apr 14, 2009

Magnetoresistive element

TOSHIBA KK15 citations93
US7355884B2Apr 8, 2008

Magnetoresistive element

TOSHIBA KK28 citations93
US7038939B2May 2, 2006

Magneto-resistance effect element and magnetic memory

TOSHIBA KK32 citations93
US4855992AAug 8, 1989

Reversible optical recording medium with an optothermally deformable recording layer

TOSHIBA KK24 citations92
US8347175B2Jan 1, 2013

Magnetic memory

TOSHIBA KK11 citations84
US7894246B2Feb 22, 2011

Magnetoresistive element and magnetic memory

TOSHIBA KK7 citations84
US7245524B2Jul 17, 2007

Magnetic memory device and write method of magnetic memory device

TOSHIBA KK16 citations84
US7193890B2Mar 20, 2007

Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method

TOSHIBA KK12 citations84
US7898846B2Mar 1, 2011

Magnetoresistive element

TOSHIBA KK6 citations74
US7518906B2Apr 14, 2009

Magneto-resistive element

TOSHIBA KK6 citations74
US7411263B2Aug 12, 2008

Magnetic memory device

TOSHIBA KK6 citations74
US7203088B2Apr 10, 2007

Magnetoresistive random access memory and driving method thereof

TOSHIBA KK7 citations74
US4839861AJun 13, 1989

Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same

TOSHIBA KK16 citations74
US5629267AMay 13, 1997

Superconducting element having an intermediate layer with multiple fluorite blocks

TOSHIBA KK8 citations73
US4922462AMay 1, 1990

Reversible memory structure for optical reading and writing and which is capable of erasure

TOSHIBA KK14 citations73
US7875903B2Jan 25, 2011

Magnetic memory device

TOSHIBA KK3 citations63
US7414880B2Aug 19, 2008

Magnetoresistive effect element and magnetic memory

TOSHIBA KK3 citations63
US7015472B2Mar 21, 2006

Infrared ray detecting type imaging device

TOSHIBA KK1 citations63
US6984856B1Jan 10, 2006

Infrared ray detecting type imaging device

TOSHIBA KK2 citations63
US8349622B2Jan 8, 2013

Magneto-resistive element

TOSHIBA KK1 citations52
US7525837B2Apr 28, 2009

Magnetoresistive effect element and magnetic memory

TOSHIBA KK1 citations52
US7266011B2Sep 4, 2007

Magneto-resistance effect element and magnetic memory

TOSHIBA KK0 citations52
US7172920B2Feb 6, 2007

Method of manufacturing an image device

TOSHIBA KK0 citations52

EVERSPIN TECHNOLOGIES INC

13 patents
US11637235B2Apr 25, 2023

In-plane spin orbit torque magnetoresistive stack/structure and methods therefor

EVERSPIN TECHNOLOGIES INC2 citations73
US11127896B2Sep 21, 2021

Shared spin-orbit-torque write line in a spin-orbit-torque MRAM

EVERSPIN TECHNOLOGIES INC4 citations73
US10622552B2Apr 14, 2020

Magnetoresistive stacks and methods therefor

EVERSPIN TECHNOLOGIES INC4 citations73
US10255961B2Apr 9, 2019

Data storage in synthetic antiferromagnets included in magnetic tunnel junctions

EVERSPIN TECHNOLOGIES INC2 citations73
US11264564B2Mar 1, 2022

Magnetoresistive devices and methods therefor

EVERSPIN TECHNOLOGIES INC2 citations70
US11488647B2Nov 1, 2022

Stacked magnetoresistive structures and methods therefor

EVERSPIN TECHNOLOGIES INC4 citations69
US12167702B2Dec 10, 2024

Magnetoresistive stack/structure and methods therefor

EVERSPIN TECHNOLOGIES INC0 citations62
US12029137B2Jul 2, 2024

Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor

EVERSPIN TECHNOLOGIES INC0 citations62
US11189781B2Nov 30, 2021

Magnetoresistive stack/structure including metal insertion substance

EVERSPIN TECHNOLOGIES INC1 citations62
US12437828B2Oct 7, 2025

Systems and methods for monitoring and managing memory devices

EVERSPIN TECHNOLOGIES INC0 citations61
US11798646B2Oct 24, 2023

Systems and methods for monitoring and managing memory devices

EVERSPIN TECHNOLOGIES INC0 citations61
US10825500B2Nov 3, 2020

Data storage in synthetic antiferromagnets included in magnetic tunnel junctions

EVERSPIN TECHNOLOGIES INC0 citations52
US12477955B2Nov 18, 2025

Magnetoresistive stack and methods therefor

EVERSPIN TECHNOLOGIES INC0 citations47

NAKAYAMA MASAHIKO

3 patents

AIKAWA HISANORI

3 patents

OZEKI JYUNICHI

1 patent

SHIMOMURA NAOHARU

1 patent

NAGAMINE MAKOTO

1 patent

KISHI TATSUYA

1 patent

UEDA TOMOMASA

1 patent

HOSOTANI KEIJI

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.