Inventor · disambiguated record
Choong-Ryul Ryou
Also filed as: RYOU CHOONG-RYUL
6 granted patents·5 pending applications·23 citations·filing 2004–2015
79Inventor score
Top patents by PatentIndex Score
11 records- 0190US7914973B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 29, 2011·12 cites·24 claims
- 0276US8846304B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 30, 2014·2 cites·10 claims
- 0371US9111880B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 18, 2015·1 cites·17 claims
- 0470US8409787B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameRYOU CHOONG-RYUL·Filed 2011·Granted Apr 2, 2013·2 cites·25 claims
- 0570US7045429B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 16, 2006·6 cites·22 claims
- 0655US2016005624A1Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 0749US2008032483A1Trench isolation methods of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 0848US2006194436A1Semiconductor device including resistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 0945US2006240636A1Trench isolation methods of semiconductor deviceRYU HYUK-JU·Filed 2006·Application pending·0 cites
- 1044US2005142497A1Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 1133US7179714B2Method of fabricating MOS transistor having fully silicided gateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 20, 2007·0 cites·19 claims
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