Inventor
HIRANO RYUICHI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “HIRANO RYUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NIPPON MINING CO
7 patentsUS7510082B2Mar 31, 2009
Wafer storage container
NIPPON MINING CO7 citations72
US7465353B2Dec 16, 2008
Method for growing epitaxial crystal
NIPPON MINING CO2 citations63
US7211142B2May 1, 2007
CdTe single crystal and CdTe polycrystal, and method for preparation thereof
NIPPON MINING CO5 citations62
US7875957B2Jan 25, 2011
Semiconductor substrate for epitaxial growth and manufacturing method thereof
NIPPON MINING CO0 citations51
US7544343B2Jun 9, 2009
CdTe system compound semiconductor single crystal
NIPPON MINING CO0 citations51
US7745854B2Jun 29, 2010
Substrate for growing compound semiconductor and epitaxial growth method
NIPPON MINING CO1 citations50
US7883998B2Feb 8, 2011
Vapor phase growth method
NIPPON MINING CO0 citations35
OLYMPUS CORP
6 patentsUS7910355B2Mar 22, 2011
Culture observation apparatus
OLYMPUS CORP6 citations62
US7852397B2Dec 14, 2010
Electronic imaging apparatus provided with a dustproof member
OLYMPUS CORP2 citations62
US7816126B2Oct 19, 2010
Culture observation apparatus, sample tray heat-insulating device and lid
OLYMPUS CORP3 citations62
US7120025B2Oct 10, 2006
Imaging apparatus
OLYMPUS CORP6 citations62
US9019600B2Apr 28, 2015
Microscope system
OLYMPUS CORP2 citations61
US7595188B2Sep 29, 2009
Observation apparatus
OLYMPUS CORP0 citations41
JX NIPPON MINING & METALS CORP
4 patentsUS9362431B2Jun 7, 2016
Compound semiconductor single crystal ingot for photoelectric conversion devices, photoelectric conversion device, and production method for compound semiconductor single crystal ingot for photoelectric conversion devices
JX NIPPON MINING & METALS CORP2 citations63
US11349037B2May 31, 2022
Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
JX NIPPON MINING & METALS CORP0 citations61
US11211505B2Dec 28, 2021
Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
JX NIPPON MINING & METALS CORP0 citations61
US11371164B2Jun 28, 2022
Compound semiconductor and method for producing single crystal of compound semiconductor
JX NIPPON MINING & METALS CORP0 citations57
O'TWOMNEY JENNIFER R
2 patentsNIKKO MATERIALS CO LTD
2 patentsJAPAN ENERGY CORP
2 patentsAMAZON TECH INC
2 patentsJX METALS CORP
2 patentsUS12021160B2Jun 25, 2024
Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
JX METALS CORP0 citations62
US11967659B2Apr 23, 2024
Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
JX METALS CORP0 citations62