Inventor
HSIEH SHENG-LIN
TW6 patents
Patents
6 patentsUS12020933B2Jun 25, 2024
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527406B2Dec 13, 2022
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12463035B2Nov 4, 2025
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11271111B2Mar 8, 2022
Source/drain structure with barrier in FinFET device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11145760B2Oct 12, 2021
Structure having improved fin critical dimension control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10153278B1Dec 11, 2018
Fin-type field effect transistor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50