Inventor
HSIEH CHING-PEI
TW28 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHING-PEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS9431603B1Aug 30, 2016
RRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD61 citations98
US9653682B1May 16, 2017
Resistive random access memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US10164184B2Dec 25, 2018
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10158069B2Dec 18, 2018
Memory cell having resistance variable film and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9853091B2Dec 26, 2017
Side bottom contact RRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US9837605B2Dec 5, 2017
Memory cell having resistance variable film and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9466794B2Oct 11, 2016
Low form voltage resistive random access memory (RRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10516107B2Dec 24, 2019
Memory cell having resistance variable film and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10483322B2Nov 19, 2019
Memory device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10158073B2Dec 18, 2018
Manufacturing method of semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9825224B2Nov 21, 2017
RRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9620582B2Apr 11, 2017
Metal-insulator-metal (MIM) capacitors and forming methods
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12020933B2Jun 25, 2024
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527406B2Dec 13, 2022
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11018299B2May 25, 2021
Memory cell having resistance variable film and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10957852B2Mar 23, 2021
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12463035B2Nov 4, 2025
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10629811B2Apr 21, 2020
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164183B2Dec 25, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9837606B2Dec 5, 2017
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9419218B2Aug 16, 2016
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9406883B1Aug 2, 2016
Structure and formation method of memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
6 patentsUS8872149B1Oct 28, 2014
RRAM structure and process using composite spacer
TAIWAN SEMICONDUCTOR MFG61 citations98
US8963114B2Feb 24, 2015
One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers
TAIWAN SEMICONDUCTOR MFG32 citations94
US9099647B2Aug 4, 2015
One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacers
TAIWAN SEMICONDUCTOR MFG16 citations93
US9040951B2May 26, 2015
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG13 citations93
US9231205B2Jan 5, 2016
Low form voltage resistive random access memory (RRAM)
TAIWAN SEMICONDUCTOR MFG6 citations84
US9299927B2Mar 29, 2016
Memory cell having resistance variable film and method of making the same
TAIWAN SEMICONDUCTOR MFG0 citations52