Inventor
KAWANO YUMIKO
JP62 patents
⚠️ This page may combine multiple inventors who share the name “KAWANO YUMIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
36 patentsUS7482283B2Jan 27, 2009
Thin film forming method and thin film forming device
TOKYO ELECTRON LTD476 citations99
US6210486B1Apr 3, 2001
CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed
TOKYO ELECTRON LTD239 citations98
US6966936B2Nov 22, 2005
Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system
TOKYO ELECTRON LTD69 citations97
US6548112B1Apr 15, 2003
Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
TOKYO ELECTRON LTD76 citations97
US6399484B1Jun 4, 2002
Semiconductor device fabricating method and system for carrying out the same
TOKYO ELECTRON LTD88 citations97
US6913996B2Jul 5, 2005
Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
TOKYO ELECTRON LTD20 citations92
US6797068B1Sep 28, 2004
Film forming unit
TOKYO ELECTRON LTD22 citations92
US6436203B1Aug 20, 2002
CVD apparatus and CVD method
TOKYO ELECTRON LTD21 citations92
US6089184AJul 18, 2000
CVD apparatus and CVD method
TOKYO ELECTRON LTD35 citations92
US6045862AApr 4, 2000
CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed
TOKYO ELECTRON LTD17 citations92
US5904557AMay 18, 1999
Method for forming multilevel interconnection of semiconductor device
TOKYO ELECTRON LTD43 citations92
US7105060B2Sep 12, 2006
Method of forming an oxidation-resistant TiSiN film
TOKYO ELECTRON LTD16 citations91
US6793969B2Sep 21, 2004
Method of forming an oxidation-resistant TiSiN film
TOKYO ELECTRON LTD16 citations91
US6846711B2Jan 25, 2005
Method of making a metal oxide capacitor, including a barrier film
TOKYO ELECTRON LTD16 citations84
US6066558AMay 23, 2000
Multilevel interconnection forming method for forming a semiconductor device
TOKYO ELECTRON LTD17 citations84
US12152304B2Nov 26, 2024
Film forming method for forming self-assembled monolayer on substrate
TOKYO ELECTRON LTD2 citations72
US11788185B2Oct 17, 2023
Film formation method and film formation device
TOKYO ELECTRON LTD2 citations72
US7582544B2Sep 1, 2009
ALD film forming method
TOKYO ELECTRON LTD7 citations72
US8029621B2Oct 4, 2011
Raw material feeding device, film formation system and method for feeding gaseous raw material
TOKYO ELECTRON LTD6 citations63
US6489198B2Dec 3, 2002
Semiconductor device and method of manufacturing the same
TOKYO ELECTRON LTD2 citations63
US6486063B2Nov 26, 2002
Semiconductor device manufacturing method for a copper connection
TOKYO ELECTRON LTD5 citations63
US12456620B2Oct 28, 2025
Film-forming method
TOKYO ELECTRON LTD0 citations62
US12183572B2Dec 31, 2024
Film formation method and film formation device
TOKYO ELECTRON LTD0 citations62
US11830741B2Nov 28, 2023
Method for forming film
TOKYO ELECTRON LTD0 citations62
US7063871B2Jun 20, 2006
CVD process capable of reducing incubation time
TOKYO ELECTRON LTD4 citations62
US11869927B2Jan 9, 2024
Method of manufacturing semiconductor device
TOKYO ELECTRON LTD0 citations60
US12540394B2Feb 3, 2026
Selective film formation using self-assembled monolayer
TOKYO ELECTRON LTD0 citations52
US8361550B2Jan 29, 2013
Method for forming SrTiO3 film and storage medium
TOKYO ELECTRON LTD1 citations52
US7960278B2Jun 14, 2011
Method of film deposition
TOKYO ELECTRON LTD0 citations52
US7344754B2Mar 18, 2008
Film formation method
TOKYO ELECTRON LTD1 citations52
US6919268B1Jul 19, 2005
Method of manufacturing a WN contact plug
TOKYO ELECTRON LTD0 citations52
US12341004B2Jun 24, 2025
Film formation method and film formation apparatus
TOKYO ELECTRON LTD0 citations51
US11598001B2Mar 7, 2023
Film forming method
TOKYO ELECTRON LTD0 citations51
US8372688B2Feb 12, 2013
Method for forming Ge-Sb-Te film and storage medium
TOKYO ELECTRON LTD1 citations51
US7456109B2Nov 25, 2008
Method for cleaning substrate processing chamber
TOKYO ELECTRON LTD0 citations51
US7361595B2Apr 22, 2008
Transition metal thin film forming method
TOKYO ELECTRON LTD0 citations51
KAWASAKI STEEL CO
6 patentsUS6063703AMay 16, 2000
Method for making metal interconnection
KAWASAKI STEEL CO49 citations96
US5973402AOct 26, 1999
Metal interconnection and method for making
KAWASAKI STEEL CO48 citations96
US5627102AMay 6, 1997
Method for making metal interconnection with chlorine plasma etch
KAWASAKI STEEL CO89 citations96
US5952723ASep 14, 1999
Semiconductor device having a multilevel interconnection structure
KAWASAKI STEEL CO42 citations92
US5637534AJun 10, 1997
Method of manufacturing semiconductor device having multilevel interconnection structure
KAWASAKI STEEL CO26 citations92
US6001736ADec 14, 1999
Method of manufacturing semiconductor device and an apparatus for manufacturing the same
KAWASAKI STEEL CO48 citations90
IBM
5 patentsUS7067422B2Jun 27, 2006
Method of forming a tantalum-containing gate electrode structure
IBM23 citations92
US6989321B2Jan 24, 2006
Low-pressure deposition of metal layers from metal-carbonyl precursors
IBM41 citations92
US6924223B2Aug 2, 2005
Method of forming a metal layer using an intermittent precursor gas flow process
IBM32 citations91
US7078341B2Jul 18, 2006
Method of depositing metal layers from metal-carbonyl precursors
IBM12 citations84
US7189431B2Mar 13, 2007
Method for forming a passivated metal layer
IBM5 citations62
YONENAGA TOMIHIRO
2 patentsGAS-PHASE GROWTH LTD
1 patentShowing the top 50 of 62 patents by PatentIndex Score.