Method for forming SrTiO3 film and storage medium

Abstract

A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an oxidizing agent in the form of gas, a Sr material is introduced into the processing chamber in the form of gas, the Sr material is oxidized by introducing the oxidizing agent in the form of gas, and a SrTiO 3 film is formed on the substrate. As the Sr material, a Sr amine compound or a Sr imine compound is used.

1. A method for forming an SrTiO 3  film, comprising the steps of:
 placing a substrate in a processing chamber; 
 heating the substrate; and 
 introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber, 
 wherein the gaseous Sr material is C 24 H 46 N 4 Sr or C 26 H 50 N 4 Sr, and the gaseous Sr material, the gaseous Ti material and the gaseous oxidizing agent are reacted with each other on the heated substrate to form a SrTiO 3  film on the substrate. 
 
     
     
       2. The method of  claim 1 , wherein the gaseous Sr material is obtained by heating a Sr source material to 100 to 200° C. and supplied by bubbling. 
     
     
       3. The method of  claim 2 , wherein the Sr source material is heated in a Sr material reservoir by a heater provided with the Sr material reservoir. 
     
     
       4. The method of  claim 1 , wherein a Sr source material is dissolved in a solvent, and heated to 100 to 200° C. and vaporized to thereby obtain the gaseous Sr material in a vaporizer to be supplied into the processing chamber. 
     
     
       5. The method of  claim 4 , wherein the Sr source material is heated in a Sr material reservoir by a heater provided with the Sr material reservoir. 
     
     
       6. A method for forming a SrTiO 3  film, comprising the steps of:
 placing a substrate in a processing chamber; 
 heating the substrate; 
 introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber, 
 wherein a Sr amine compound or a Sr imine compound is used as the gaseous Sr material, and the gaseous Sr material, the gaseous Ti material and the gaseous oxidizing agent are reacted with each other on the heated substrate to form a SrTiO 3  film on the substrate, 
 wherein a Sr source material is dissolved in a solvent, and heated to 100 to 200° C and vaporized to thereby obtain the gaseous Sr material in a vaporizer to be supplied into the processing chamber, and 
 wherein the solvent is cyclohexane. 
 
     
     
       7. A method for forming an SrTiO 3  film, comprising the steps of:
 placing a substrate in a processing chamber; 
 heating the substrate; and 
 introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber, 
 wherein the gaseous Sr material is C 24 H 46 N 4 Sr or C 26 H 50 N 4 Sr, 
 wherein said introducing step includes the sub-steps of:
 adsorbing the gaseous Ti material on the substrate by introducing the gaseous Ti material into the processing chamber; 
 forming a Ti-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Ti material; 
 adsorbing the gaseous Sr material on the Ti-containing oxide film by introducing the gaseous Sr material into the processing chamber; and 
 forming an Sr-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Sr material, and 
 
 wherein the sub-steps are repeated as one cycle several times to deposit thin films for respective cycles such that an SrTiO 3  film having a predetermined thickness is formed on the substrate. 
 
     
     
       8. The method of  claim 7 , further comprising the step of:
 purging the processing chamber, between the sub-steps of adsorbing the gaseous Ti material, forming the Ti-containing oxide film, adsorbing the gaseous Sr material, and forming the Sr-containing oxide film. 
 
     
     
       9. The method of  claim 7 , wherein the gaseous Sr material is obtained by heating a Sr source material to 100 to 200° C. and supplied by bubbling. 
     
     
       10. The method of  claim 9 , wherein the Sr source material is heated in a Sr material reservoir by a heater provided with the Sr material reservoir. 
     
     
       11. The method of  claim 7 , wherein a Sr source material is dissolved in a solvent, and heated to 100 to 200° C. and vaporized to thereby obtain the gaseous Sr material in a vaporizer to be supplied into the processing chamber. 
     
     
       12. The method of  claim 11 , wherein the source material is heated in a Sr material reservoir by a heater provided with the Sr material reservoir. 
     
     
       13. A method for forming a SrTiO 3  film, comprising the steps of:
 placing a substrate in a processing chamber; 
 heating the substrate; and 
 introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber, 
 wherein a Sr amine compound or a Sr imine compound is used as the gaseous Sr material, 
 wherein said introducing step includes the sub-steps of:
 adsorbing the gaseous Ti material on the substrate by introducing the gaseous Ti material into the processing chamber; 
 forming a Ti-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Ti material; 
 adsorbing the gaseous Sr material on the Ti-containing oxide film by introducing the gaseous Sr material into the processing chamber; and 
 forming a Sr-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Sr material, 
 
 wherein the sub-steps are repeated as one cycle several times to deposit thin films for respective cycles such that a SrTiO 3  film having a predetermined thickness is formed on the substrate, 
 wherein a Sr source material is dissolved in a solvent, and heated to 100 to 200° C. and vaporized to thereby obtain the gaseous Sr material in a vaporizer to be supplied into the processing chamber, and 
 wherein the solvent is cyclohexane. 
 
     
     
       14. A non-transitory computer-readable storage medium storing a program which runs on a computer and, when executed, controls a film forming apparatus to perform a method for forming an SrTiO 3  film, the method including:
 placing a substrate in a processing chamber; 
 heating the substrate; and 
 introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber, 
 wherein the gaseous Sr material is C 24 H 46 N 4 Sr or C 26 H 50 N 4 Sr, and the gaseous Sr material, the gaseous Ti material and the gaseous oxidizing agent are reacted with each other on the heated substrate to form an SrTiO 3  film on the substrate. 
 
     
     
       15. A non-transitory computer-readable storage medium storing a program which runs on a computer and, when executed, controls a film forming apparatus to perform a method for forming an SrTiO 3  film, the method including:
 placing a substrate in a processing chamber; 
 heating the substrate; and 
 introducing a gaseous Sr material, a gaseous Ti material and a gaseous oxidizing agent into the processing chamber, 
 wherein the gaseous Sr material is C 24 H 46 N 4 Sr or C 26 H 50 N 4 Sr, 
 wherein said introducing step includes the sub-steps of:
 adsorbing the gaseous Ti material on the substrate by introducing the gaseous Ti material into the processing chamber; 
 forming a Ti-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Ti material; 
 adsorbing the gaseous Sr material on the Ti-containing oxide film by introducing the gaseous Sr material into the processing chamber; and 
 forming an Sr-containing oxide film by introducing the gaseous oxidizing agent into the processing chamber to decompose the adsorbed Sr material, and 
 
 wherein the sub-steps are repeated as one cycle several times to deposit thin films for respective cycles such that an SrTiO 3  film having a predetermined thickness is formed on the substrate.