Inventor · disambiguated record
Yumiko Kawano
Also filed as: KAWANO YUMIKO
60 granted patents·39 pending applications·1,630 citations·filing 1993–2025
99Inventor score
Top patents by PatentIndex Score
99 records- 0198US7482283B2Thin film forming method and thin film forming deviceTOKYO ELECTRON LTD·Filed 2001·Granted Jan 27, 2009·476 cites·12 claims
- 0298US6210486B1CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processedTOKYO ELECTRON LTD·Filed 2000·Granted Apr 3, 2001·239 cites·6 claims
- 0392US6966936B2Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD systemTOKYO ELECTRON LTD·Filed 2002·Granted Nov 22, 2005·69 cites·6 claims
- 0490US5627102AMethod for making metal interconnection with chlorine plasma etchKAWASAKI STEEL CO·Filed 1995·Granted May 6, 1997·89 cites·23 claims
- 0589US12152304B2Film forming method for forming self-assembled monolayer on substrateTOKYO ELECTRON LTD·Filed 2020·Granted Nov 26, 2024·2 cites·7 claims
- 0688US6989321B2Low-pressure deposition of metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jan 24, 2006·41 cites·32 claims
- 0787US11788185B2Film formation method and film formation deviceTOKYO ELECTRON LTD·Filed 2020·Granted Oct 17, 2023·2 cites·5 claims
- 0887US6548112B1Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamberTOKYO ELECTRON LTD·Filed 1999·Granted Apr 15, 2003·76 cites·10 claims
- 0986US6399484B1Semiconductor device fabricating method and system for carrying out the sameTOKYO ELECTRON LTD·Filed 1999·Granted Jun 4, 2002·88 cites·4 claims
- 1085US8029621B2Raw material feeding device, film formation system and method for feeding gaseous raw materialTOKYO ELECTRON LTD·Filed 2006·Granted Oct 4, 2011·6 cites·1 claims
- 1184US6924223B2Method of forming a metal layer using an intermittent precursor gas flow processIBM·Filed 2003·Granted Aug 2, 2005·32 cites·53 claims
- 1282US8658951B2Heat treatment apparatusYONENAGA TOMIHIRO·Filed 2011·Granted Feb 25, 2014·7 cites·14 claims
- 1381US7582544B2ALD film forming methodTOKYO ELECTRON LTD·Filed 2006·Granted Sep 1, 2009·7 cites·19 claims
- 1480US6436203B1CVD apparatus and CVD methodTOKYO ELECTRON LTD·Filed 2000·Granted Aug 20, 2002·21 cites·10 claims
- 1580US6063703AMethod for making metal interconnectionKAWASAKI STEEL CO·Filed 1998·Granted May 16, 2000·49 cites·54 claims
- 1680US5973402AMetal interconnection and method for makingKAWASAKI STEEL CO·Filed 1997·Granted Oct 26, 1999·48 cites·20 claims
- 1778US7067422B2Method of forming a tantalum-containing gate electrode structureIBM·Filed 2004·Granted Jun 27, 2006·23 cites·31 claims
- 1878US6797068B1Film forming unitTOKYO ELECTRON LTD·Filed 2000·Granted Sep 28, 2004·22 cites·12 claims
- 1976US6913996B2Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiringTOKYO ELECTRON LTD·Filed 2001·Granted Jul 5, 2005·20 cites·34 claims
- 2075US7105060B2Method of forming an oxidation-resistant TiSiN filmTOKYO ELECTRON LTD·Filed 2004·Granted Sep 12, 2006·16 cites·4 claims
- 2175US6793969B2Method of forming an oxidation-resistant TiSiN filmTOKYO ELECTRON LTD·Filed 2002·Granted Sep 21, 2004·16 cites·13 claims
- 2275US5952723ASemiconductor device having a multilevel interconnection structureKAWASAKI STEEL CO·Filed 1997·Granted Sep 14, 1999·42 cites·33 claims
- 2372US6001736AMethod of manufacturing semiconductor device and an apparatus for manufacturing the sameKAWASAKI STEEL CO·Filed 1996·Granted Dec 14, 1999·48 cites·37 claims
- 2472US5904557AMethod for forming multilevel interconnection of semiconductor deviceTOKYO ELECTRON LTD·Filed 1997·Granted May 18, 1999·43 cites·13 claims
- 2570US7078341B2Method of depositing metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jul 18, 2006·12 cites·40 claims
- 2670US6089184ACVD apparatus and CVD methodTOKYO ELECTRON LTD·Filed 1998·Granted Jul 18, 2000·35 cites·4 claims
- 2769US6846711B2Method of making a metal oxide capacitor, including a barrier filmTOKYO ELECTRON LTD·Filed 2001·Granted Jan 25, 2005·16 cites·6 claims
- 2868US9428835B2Cobalt base film-forming method, cobalt base film-forming material, and novel compoundGAS-PHASE GROWTH LTD·Filed 2012·Granted Aug 30, 2016·2 cites·11 claims
- 2965US8674273B2Heat treatment apparatusYONENAGA TOMIHIRO·Filed 2011·Granted Mar 18, 2014·2 cites·11 claims
- 3063US8372688B2Method for forming Ge-Sb-Te film and storage mediumTOKYO ELECTRON LTD·Filed 2010·Granted Feb 12, 2013·1 cites·6 claims
- 3163US8361550B2Method for forming SrTiO3 film and storage mediumTOKYO ELECTRON LTD·Filed 2008·Granted Jan 29, 2013·1 cites·15 claims
- 3263US2025095985A1Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3362US7344754B2Film formation methodTOKYO ELECTRON LTD·Filed 2005·Granted Mar 18, 2008·1 cites·11 claims
- 3462US2025034715A1Film forming methodTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3561US5637534AMethod of manufacturing semiconductor device having multilevel interconnection structureKAWASAKI STEEL CO·Filed 1993·Granted Jun 10, 1997·26 cites·64 claims
- 3660US7063871B2CVD process capable of reducing incubation timeTOKYO ELECTRON LTD·Filed 2003·Granted Jun 20, 2006·4 cites·11 claims
- 3759US8679913B2Method for Sr—Ti—O-based film formationKAWANO YUMIKO·Filed 2008·Granted Mar 25, 2014·1 cites·4 claims
- 3859US2024191344A1Surface treatment method and substrate treatment deviceTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 3958US6045862ACVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processedTOKYO ELECTRON LTD·Filed 1998·Granted Apr 4, 2000·17 cites·5 claims
- 4058US2025263831A1Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 4158US2015093518A1Heat treatment apparatus and heat treatment methodTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 4257US9246098B2Ge—Sb—Te film forming method, Ge—Te film forming method, and Sb—Te film forming methodTOKYO ELECTRON LTD·Filed 2014·Granted Jan 26, 2016·0 cites·18 claims
- 4356US12456620B2Film-forming methodTOKYO ELECTRON LTD·Filed 2020·Granted Oct 28, 2025·0 cites·14 claims
- 4456US6486063B2Semiconductor device manufacturing method for a copper connectionTOKYO ELECTRON LTD·Filed 2001·Granted Nov 26, 2002·5 cites·10 claims
- 4556US2025243581A1Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 4656US2025207245A1Film formation method and film formation deviceTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4756US2025207244A1Film formation method and film formation deviceTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4856US2025226228A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 4956US2025197990A1Film formation method and film formation deviceTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 5056US2025183032A1Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →