Inventor

YOSHIDA NAOMI

US52 patents

⚠️ This page may combine multiple inventors who share the name “YOSHIDA NAOMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOSHIDA NAOMI

APPLIED MATERIALS INC

Film deposition method and apparatus

Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications

Method for fabricating junctions and spacers for horizontal gate all around devices

Suppression of tungsten film deposition on a semiconductor wafer bevel edge with a halogenide purge gas

Horizontal gate all around and FinFET device isolation

Methods and apparatus for forming horizontal gate all around device structures

Horizontal gate all around device isolation

Horizontal gate all around device nanowire air gap spacer formation

Low thickness dependent work-function nMOS integration for metal gate

Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)

Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof

Film deposition method and apparatus

Integrated dipole flow for transistor

Horizontal gate all around and FinFET device isolation

Horizontal gate all around device isolation

Horizontal gate all around and FinFET device isolation

Tantalum-containing material removal

Test structure design for reliability test

Method of dielectric material fill and treatment

Method of dielectric material fill and treatment

Electronic device having an oxygen free platinum group metal film

Method of dielectric material fill and treatment

Oxygen free deposition of platinum group metal films

Film deposition method and apparatus for semiconductor devices

Film deposition method and apparatus for semiconductor devices

Integrated dipole flow for transistor

Horizontal gate-all-around device nanowire air gap spacer formation

Method of cleaning a structure and method of depositing a capping layer in a structure

Horizontal gate all around device nanowire air gap spacer formation

Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

Aluminum content control of TiAIN films

Integrated method and tool for high quality selective silicon nitride deposition

Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films

Test structure design for reliability test

Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD

Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD

Amorphous carbon deposition method for improved stack defectivity

Film deposition method and apparatus

Fluorine-free tungsten ALD for dielectric selectivity improvement

BABCOCK HITACHI KK

Catalyst for reducing nitrogen oxides and process for making the catalyst

Process for producing a denitration catalyst

Catalyst for removing nitrogen oxides and a process for producing the same

Exhaust emission control catalyst element, catalyst structure, production method thereof, exhaust emission control apparatus and exhaust emission control method using the apparatus

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

Method for fabricating asymmetrical three dimensional device

Method for fabricating three dimensional device

YOSHIDA NAOMI

Metal gate structures for field effect transistors and method of fabrication

YU HANG

Amorphous carbon deposition method for improved stack defectivity

FREUNT IND CO LTD

Aqueous solution containing ginkgo leaf extract

UNIV CALIFORNIA

Low temperature atomic layer deposition of oxides on compound semiconductors

AKIZUKI NAOMICHI

System for automatically generating continuous developed still image from video image of inner wall of tubular object