Electronic device having an oxygen free platinum group metal film

Abstract

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

What is claimed is: 
     
       1. An electronic device comprising:
 a conductive substrate comprising titanium nitride (TiN) free of oxide and having a thickness in a range of from 1 nm to 50 nm; 
 at least one feature formed in the conductive substrate; and 
 a platinum group metal film free of oxide on the conductive substrate and on the at least one feature, the platinum group metal film having a thickness of 30 Å, an impurity of less than 5 atomic %, a resistivity of less than 100 μΩ-cm, and greater than 95% step coverage. 
 
     
     
       2. The device of  claim 1 , wherein the platinum group metal is selected from the group consisting of platinum (Pt), palladium (Pd), iridium (Ir), osmium (Os), ruthenium (Ru), rhodium (Rh), and mixtures thereof. 
     
     
       3. The device of  claim 2 , wherein the platinum group metal consists essentially of platinum (Pt). 
     
     
       4. The device of  claim 1 , wherein the platinum group metal film is one or more of a platinum group metal metallic film, a platinum group metal carbide film, a platinum group metal nitride film, or a platinum group metal silicide film. 
     
     
       5. The device of  claim 1 , wherein the platinum group metal film has a roughness in a range of from 0.1 nm to 3.0 nm. 
     
     
       6. An electronic device comprising:
 a conductive substrate comprising titanium nitride (TiN) free of oxide and having a thickness in a range of from 1 nm to 50 nm; 
 at least one feature formed in the conductive substrate; and 
 a platinum group metal film free oxide on the conductive substrate and on the at least one feature, the platinum group metal film having a thickness of 30 Å, an impurity of less than 5 atomic %, resistivity of less than 100 μΩ-cm, and greater than 95% step coverage, the platinum group metal film having a roughness in a range of from 0.1 nm to 3.0 nm. 
 
     
     
       7. The device of  claim 6 , wherein the platinum group metal is selected from the group consisting of platinum (Pt), palladium (Pd), iridium (Ir), osmium (Os), ruthenium (Ru), rhodium (Rh), and mixtures thereof. 
     
     
       8. The device of  claim 7 , wherein the platinum group metal consists essentially of platinum (Pt). 
     
     
       9. The device of  claim 6 , wherein the platinum group metal film is one or more of a platinum group metal metallic film, a platinum group metal carbide film, a platinum group metal nitride film, or a platinum group metal silicide film.