Inventor

YU SANG HO

US76 patents

⚠️ This page may combine multiple inventors who share the name “YU SANG HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YU SANG HO

APPLIED MATERIALS INC

Barrier formation using novel sputter deposition method with PVD, CVD, or ALD

Deposition methods for barrier and tungsten materials

Method of enabling seamless cobalt gap-fill

Deposition methods for barrier and tungsten materials

Cobalt removal for chamber clean or pre-clean process

Staged aluminum deposition process for filling vias

Staged aluminum deposition process for filling vias

Reducing gate induced drain leakage in DRAM wordline

Selective deposition of aluminum oxide on metal surfaces

Tungsten deposition with tungsten hexafluoride (WF6) etchback

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Aluminum contact integration on cobalt silicide junction

Cobalt deposition on barrier surfaces

Tungsten growth modulation by controlling surface composition

Selective deposition on non-metallic surfaces

Reducing gate induced drain leakage in DRAM wordline

Methods for filling features with ruthenium

Low thickness dependent work-function nMOS integration for metal gate

Methods for thermally forming a selective cobalt layer

Method of enabling seamless cobalt gap-fill

In-situ pre-clean for selectivity improvement for selective deposition

Method to deposit CVD ruthenium

Methods for forming metal organic tungsten for middle of the line (MOL) applications

Method of testing a gap fill for DRAM

Gap fill methods of forming buried word lines in DRAM without forming bottom voids

Methods and materials for enhanced barrier performance and reduced via resistance

Selective deposition of aluminum oxide on metal surfaces

Barrier for copper metallization and methods of forming

Aluminum sputtering while biasing wafer

Selective cobalt deposition on copper surfaces

Electronic device having an oxygen free platinum group metal film

Oxygen free deposition of platinum group metal films

Selective cobalt deposition on copper surfaces

GANGULI SESHADRI

Process for forming cobalt-containing materials

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Metal gate structures and methods for forming thereof

Process for forming cobalt and cobalt silicide materials in tungsten contact applications

Process for forming cobalt and cobalt silicide materials in tungsten contact applications

Process for forming cobalt-containing materials

LG DISPLAY CO LTD

Organic light emitting diode display device and driving method thereof

Organic electroluminescent display device and method of fabricating the same

Organic electroluminescence display device and method of fabricating the same

LEE SANG-HYEOB

Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance

Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance

LAM HYMAN

Apparatuses and methods for atomic layer deposition

ZOPE BHUSHAN N

Method of enabling seamless cobalt gap-fill

LAM HYMAN W H

Apparatuses and methods for atomic layer deposition

HYUNDAI ELECTRONICS IND

Method for forming shallow junction of a semiconductor device

LU JIANG

Cobalt deposition on barrier surfaces

YU SANG-HO

Display device and method for driving the same