Inventor

ANTHIS JEFFREY W

US72 patents

⚠️ This page may combine multiple inventors who share the name “ANTHIS JEFFREY W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANTHIS JEFFREY W

APPLIED MATERIALS INC

Methods of depositing metal films using metal oxyhalide precursors

Selectively etching metals and metal nitrides conformally

Oxide and metal removal

Methods of forming self-aligned vias

Selective etch for metal-containing materials

Plasma-free metal etch

Selective etch for metal-containing materials

Oxide and metal removal

Reducing gate induced drain leakage in DRAM wordline

Methods of etching films comprising transition metals

Reducing gate induced drain leakage in DRAM wordline

Ruthenium precursors for ALD and CVD thin film deposition and uses thereof

Nitrogen-containing ligands and their use in atomic layer deposition methods

Ruthenium precursors for ALD and CVD thin film deposition and uses thereof

Seamless trench fill using deposition/etch techniques

Methods of depositing a metal alloy film

Methods of etching films with reduced surface roughness

Nitrogen-containing ligands and their use in atomic layer deposition methods

Methods of etching films with reduced surface roughness

Methods for the deposition of manganese-containing films using diazabutadiene-based precursors

Deposition of metal films using alane-based precursors

Selective deposition defects removal by chemical etch

Water assisted highly pure ruthenium thin film deposition

Deposition of N-metal films comprising aluminum alloys

Dry etching with etch byproduct self-cleaning

Low temperature deposition of iridium containing films

Electronic device having an oxygen free platinum group metal film

Low temperature deposition of iridium containing films

Oxygen free deposition of platinum group metal films

Methods of forming self-aligned vias

Precursors for the atomic layer deposition of transition metals and methods of use

Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices

Method to deposit metal cap for interconnect

Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use

ALD process for NiO film with tunable carbon content

Ruthenium film deposition using low valent metal precursors

Atomic layer deposition of molybdenum silicide thin films

Selective etch of a substrate

Selective deposition processes on semiconductor substrates

Acetylide-based silicon precursors and their use as ALD/CVD precursors

In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD

Methods of depositing metal films using metal oxyhalide precursors

Methods of forming self-aligned vias

Precursors for deposition of metal, metal nitride and metal oxide based films of transition metals

Nitrogen-containing ligands and their use in atomic layer deposition methods

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

System and method for controllable non-volatile metal removal

System and method for controllable non-volatile metal removal

WEIDMAN TIMOTHY W

Activated silicon precursors for low temperature deposition

SATO TATSUYA E

In situ vapor phase surface activation of SiO2

THOMPSON DAVID

Precursors and methods for the atomic layer deposition of manganese