Inventor

SHEK MEI-YEE

US33 patents

⚠️ This page may combine multiple inventors who share the name “SHEK MEI-YEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHEK MEI-YEE

APPLIED MATERIALS INC

Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating

Boron diffusion barrier by nitrogen incorporation in spacer dielectrics

Integration process for fabricating stressed transistor structure

Control of semiconductor device isolation properties through incorporation of fluorine in peteos films

Method to fabricate thermally stable low K-FinFET spacer

Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom

Methods of forming metal silicide layers and metal silicide layers formed therefrom

Cobalt selectivity improvement in selective cobalt process sequence

Method to improve the step coverage and pattern loading for dielectric films

Silicon carbide deposition for use as a low dielectric constant anti-reflective coating

Method to increase the compressive stress of PECVD silicon nitride films

Dielectric/metal barrier integration to prevent copper diffusion

Cu/barrier interface enhancement

Dielectric/metal barrier integration to prevent copper diffusion

Enhancing electrical property and UV compatibility of ultrathin blok barrier film

Methods for forming passivation protection for an interconnection structure

Apparatus and methods for silicon oxide CVD resist planarization

Method to improve the step coverage and pattern loading for dielectric films

Method of dielectric material fill and treatment

Method of dielectric material fill and treatment

High pressure annealing process for metal containing materials

Method of dielectric material fill and treatment

Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom

High pressure annealing process for metal containing materials

Cobalt selectivity improvement in selective cobalt process sequence

Silicon carbonitride gapfill with tunable carbon content

Silicon dioxide layer deposited with BDEAS

BALSEANU MIHAELA

Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

XU HUIWEN

Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k&lt;2.5) dielectrics

CHAN KELVIN

Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer

YE WEIFENG

Copper oxide removal techniques

Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics