Silicon dioxide layer deposited with BDEAS

Abstract

A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.

1. A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
 (a) forming on the substrate, a patterned resist layer having a plurality of resist features that are spaced apart from one another; and 
 (b) depositing a silicon dioxide layer on the resist features of the patterned resist layer without forming a direct plasma or a remote plasma by:
 (i) placing the substrate with the patterned resist layer in a process zone; 
 (ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas. 
 
 
     
     
       2. A method according to  claim 1  wherein the resist features comprise top surfaces, sidewalls, and spacing gaps therebetween, and wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features. 
     
     
       3. A method according to  claim 2  wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features such that the ratio of a sidewall thickness (Ts) of the silicon dioxide layer to a top thickness (Tt) of the silicon dioxide layer is from about 0.95:1 to about 1:1. 
     
     
       4. A method according to  claim 1  wherein (b) comprises maintaining the substrate at a temperature of less than 70° C. 
     
     
       5. A method according to  claim 1  wherein (b) comprises maintaining the substrate at about room temperature. 
     
     
       6. A method according to  claim 1  wherein the oxygen-containing gas comprises ozone. 
     
     
       7. A method according to  claim 6  comprising generating the ozone by passing oxygen through an ozone generator. 
     
     
       8. A method according to  claim 1  comprising generating the BDEAS by flowing carrier gas through a vaporizer to vaporize liquid BDEAS. 
     
     
       9. A method according to  claim 1  comprising introducing the BDEAS and oxygen-containing gases through separate gas conduits so that the gases mix in a mixing zone immediately above the process zone. 
     
     
       10. A method according to  claim 9  comprising maintaining the mixing zone at a temperature of at least 90° C. 
     
     
       11. A method according to  claim 1  wherein (a) comprises forming a resist layer comprising photoresist, exposing the photoresist layer to a pattern of light, and developing the exposed photoresist layer. 
     
     
       12. A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
 (a) forming on the substrate, a patterned resist layer having a plurality of resist features that are spaced apart from one another; 
 (b) depositing a silicon dioxide layer on the patterned resist layer without forming a plasma by:
 (i) placing the substrate with the patterned resist layer in a process zone; and 
 (ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas comprising ozone. 
 
 
     
     
       13. A method according to  claim 12  wherein the resist features comprise top surfaces, sidewalls, and spacing gaps therebetween, and wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features. 
     
     
       14. A method according to  claim 13  wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features such that the ratio of a sidewall thickness (Ts) of the silicon dioxide layer to a top thickness (Tt) of the silicon dioxide layer is from about 0.95:1 to about 1:1. 
     
     
       15. A method according to  claim 12  wherein (b) comprises maintaining the substrate at a temperature of less than 70° C. 
     
     
       16. A method according to  claim 12  wherein the oxygen-containing gas comprises ozone. 
     
     
       17. A method according to  claim 12  comprising generating the BDEAS by flowing carrier gas through a vaporizer to vaporize liquid BDEAS. 
     
     
       18. A method according to  claim 12  comprising introducing the BDEAS and oxygen-containing gases through separate gas conduits so that the gases mix in a mixing zone immediately above the process zone. 
     
     
       19. A method according to  claim 18  comprising maintaining the mixing zone at a temperature of at least 90° C. 
     
     
       20. A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
 (a) forming on the substrate, a patterned resist layer having a plurality of resist features that are spaced apart from one another; 
 (b) placing the substrate with the patterned resist layer in a process zone; 
 (c) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas comprising ozone; 
 (d) depositing a silicon dioxide layer on the patterned resist layer without energizing the process gas.