Inventor · disambiguated record
Mei-Yee Shek
Also filed as: SHEK MEI-YEE
32 granted patents·11 pending applications·1,795 citations·filing 1997–2023
97Inventor score
Top patents by PatentIndex Score
43 records- 0198US8445075B2Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectricsXU HUIWEN·Filed 2010·Granted May 21, 2013·517 cites·10 claims
- 0298US8138104B2Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cureBALSEANU MIHAELA·Filed 2007·Granted Mar 20, 2012·479 cites·18 claims
- 0398US8129290B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2006·Granted Mar 6, 2012·492 cites·16 claims
- 0496US10950429B2Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefromAPPLIED MATERIALS INC·Filed 2019·Granted Mar 16, 2021·14 cites·17 claims
- 0596US10714331B2Method to fabricate thermally stable low K-FinFET spacerAPPLIED MATERIALS INC·Filed 2019·Granted Jul 14, 2020·15 cites·20 claims
- 0695US10916433B2Methods of forming metal silicide layers and metal silicide layers formed therefromAPPLIED MATERIALS INC·Filed 2019·Granted Feb 9, 2021·14 cites·16 claims
- 0794US7132353B1Boron diffusion barrier by nitrogen incorporation in spacer dielectricsAPPLIED MATERIALS INC·Filed 2005·Granted Nov 7, 2006·67 cites·36 claims
- 0891US7566655B2Integration process for fabricating stressed transistor structureAPPLIED MATERIALS INC·Filed 2006·Granted Jul 28, 2009·20 cites·12 claims
- 0988US11566325B2Silicon carbonitride gapfill with tunable carbon contentAPPLIED MATERIALS INC·Filed 2020·Granted Jan 31, 2023·1 cites·16 claims
- 1087US7780865B2Method to improve the step coverage and pattern loading for dielectric filmsAPPLIED MATERIALS INC·Filed 2007·Granted Aug 24, 2010·12 cites·19 claims
- 1186US9105695B2Cobalt selectivity improvement in selective cobalt process sequenceAPPLIED MATERIALS INC·Filed 2014·Granted Aug 11, 2015·6 cites·20 claims
- 1286US6635583B2Silicon carbide deposition for use as a low-dielectric constant anti-reflective coatingAPPLIED MATERIALS INC·Filed 1998·Granted Oct 21, 2003·72 cites·19 claims
- 1384US8753989B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2012·Granted Jun 17, 2014·5 cites·14 claims
- 1484US8481422B2Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layerCHAN KELVIN·Filed 2012·Granted Jul 9, 2013·6 cites·16 claims
- 1583US7732342B2Method to increase the compressive stress of PECVD silicon nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Jun 8, 2010·10 cites·13 claims
- 1681US9601431B2Dielectric/metal barrier integration to prevent copper diffusionAPPLIED MATERIALS INC·Filed 2014·Granted Mar 21, 2017·4 cites·1 claims
- 1780US10008448B2Dielectric/metal barrier integration to prevent copper diffusionAPPLIED MATERIALS INC·Filed 2017·Granted Jun 26, 2018·2 cites·14 claims
- 1878US9478460B2Cobalt selectivity improvement in selective cobalt process sequenceAPPLIED MATERIALS INC·Filed 2015·Granted Oct 25, 2016·2 cites·20 claims
- 1977US12046508B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2076US9580801B2Enhancing electrical property and UV compatibility of ultrathin blok barrier filmAPPLIED MATERIALS INC·Filed 2014·Granted Feb 28, 2017·3 cites·19 claims
- 2176US9299605B2Methods for forming passivation protection for an interconnection structureAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·3 cites·20 claims
- 2275US8852962B2Apparatus and methods for silicon oxide CVD resist planarizationAPPLIED MATERIALS INC·Filed 2012·Granted Oct 7, 2014·3 cites·20 claims
- 2375US2023066497A1Silicon carbonitride gapfill with tunable carbon contentAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2474US7923386B2Method to improve the step coverage and pattern loading for dielectric filmsAPPLIED MATERIALS INC·Filed 2009·Granted Apr 12, 2011·3 cites·15 claims
- 2573US9633861B2Cu/barrier interface enhancementAPPLIED MATERIALS INC·Filed 2014·Granted Apr 25, 2017·3 cites·8 claims
- 2673US6951826B2Silicon carbide deposition for use as a low dielectric constant anti-reflective coatingAPPLIED MATERIALS INC·Filed 2003·Granted Oct 4, 2005·14 cites·29 claims
- 2770US11581183B2Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefromAPPLIED MATERIALS INC·Filed 2021·Granted Feb 14, 2023·0 cites·18 claims
- 2867US11881411B2High pressure annealing process for metal containing materialsAPPLIED MATERIALS INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 2967US11615984B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 3066US8758638B2Copper oxide removal techniquesYE WEIFENG·Filed 2011·Granted Jun 24, 2014·3 cites·24 claims
- 3160US10998200B2High pressure annealing process for metal containing materialsAPPLIED MATERIALS INC·Filed 2019·Granted May 4, 2021·0 cites·20 claims
- 3257US6451686B1Control of semiconductor device isolation properties through incorporation of fluorine in peteos filmsAPPLIED MATERIALS INC·Filed 1997·Granted Sep 17, 2002·25 cites·36 claims
- 3357US2025022704A1Directional selective fill of silicon oxide materialsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3451US2013230986A1Adhesion improvement for low k dielectrics to conductive materialsAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 3551US2007287301A1Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectricsXU HUIWEN·Filed 2007·Application pending·0 cites
- 3648US2012196450A1Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cureBALSEANU MIHAELA·Filed 2012·Application pending·0 cites
- 3744US2014273516A1Vbd and tddb improvement thru interface engineeringAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 3843US2016013049A1Enhancing uv compatibility of low k barrier filmAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 3943US2007202640A1Low-k spacer integration into CMOS transistorsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4043US2019258153A1Method for processing a mask substrate to enable better film qualityAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4142US8343881B2Silicon dioxide layer deposited with BDEASAPPLIED MATERIALS INC·Filed 2010·Granted Jan 1, 2013·0 cites·20 claims
- 4241US2013333923A1MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATIONBALSEANU MIHAELA·Filed 2012·Application pending·0 cites
- 4336US2012097330A1Dual delivery chamber designIYENGAR PRAHALLAD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →