Inventor · disambiguated record
Li-Qun Xia
Also filed as: SUGIARTO LEGAL REPRESENTATIVE · SUGIARTO LEGAL REPRESENTATIVE JERRY · XIA LI · XIA LI-QUN
197 granted patents·71 pending applications·13,581 citations·filing 1996–2025
99Inventor score
Files withAPPLIED MATERIALS INC219BALSEANU MIHAELA12NGUYEN VICTOR6RAJAGOPALAN NAGARAJAN4CHAN KELVIN2
Top patents by PatentIndex Score
268 records- 0199US7749563B2Two-layer film for next generation damascene barrier application with good oxidation resistanceAPPLIED MATERIALS INC·Filed 2002·Granted Jul 6, 2010·466 cites·31 claims
- 0299US7326657B2Post-deposition treatment to enhance properties of Si-O-C low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Feb 5, 2008·524 cites·9 claims
- 0399US7253123B2Method for producing gate stack sidewall spacersAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·253 cites·24 claims
- 0499US6632478B2Process for forming a low dielectric constant carbon-containing filmAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·658 cites·46 claims
- 0599US6413583B1Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compoundAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·725 cites·6 claims
- 0699US6347636B1Methods and apparatus for gettering fluorine from chamber material surfacesAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·579 cites·12 claims
- 0798US8445075B2Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectricsXU HUIWEN·Filed 2010·Granted May 21, 2013·517 cites·10 claims
- 0898US8138104B2Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cureBALSEANU MIHAELA·Filed 2007·Granted Mar 20, 2012·479 cites·18 claims
- 0998US8129290B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2006·Granted Mar 6, 2012·492 cites·16 claims
- 1098US7501355B2Decreasing the etch rate of silicon nitride by carbon additionAPPLIED MATERIALS INC·Filed 2006·Granted Mar 10, 2009·492 cites·6 claims
- 1198US6627532B1Method of decreasing the K value in SiOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·358 cites·27 claims
- 1298US6602806B1Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide filmAPPLIED MATERIALS INC·Filed 2000·Granted Aug 5, 2003·549 cites·11 claims
- 1398US6465366B1Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layersAPPLIED MATERIALS INC·Filed 2000·Granted Oct 15, 2002·315 cites·44 claims
- 1498US5812403AMethods and apparatus for cleaning surfaces in a substrate processing systemAPPLIED MATERIALS INC·Filed 1996·Granted Sep 22, 1998·459 cites·20 claims
- 1597US8143174B2Post-deposition treatment to enhance properties of Si-O-C low K filmsXIA LI-QUN·Filed 2008·Granted Mar 27, 2012·521 cites·17 claims
- 1697US7871926B2Methods and systems for forming at least one dielectric layerAPPLIED MATERIALS INC·Filed 2007·Granted Jan 18, 2011·77 cites·17 claims
- 1797US6936551B2Methods and apparatus for E-beam treatment used to fabricate integrated circuit devicesAPPLIED MATERIALS INC·Filed 2003·Granted Aug 30, 2005·52 cites·36 claims
- 1897US6764958B1Method of depositing dielectric filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jul 20, 2004·314 cites·45 claims
- 1997US6656837B2Method of eliminating photoresist poisoning in damascene applicationsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 2, 2003·285 cites·17 claims
- 2097US6635575B1Methods and apparatus to enhance properties of Si-O-C low K filmsAPPLIED MATERIALS INC·Filed 2000·Granted Oct 21, 2003·150 cites·10 claims
- 2197US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 2297US6566278B1Method for densification of CVD carbon-doped silicon oxide films through UV irradiationAPPLIED MATERIALS INC·Filed 2000·Granted May 20, 2003·647 cites·9 claims
- 2397US6503843B1Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fillAPPLIED MATERIALS INC·Filed 1999·Granted Jan 7, 2003·322 cites·19 claims
- 2497US6352591B1Methods and apparatus for shallow trench isolationAPPLIED MATERIALS INC·Filed 2000·Granted Mar 5, 2002·112 cites·18 claims
- 2597US6114216AMethods for shallow trench isolationAPPLIED MATERIALS INC·Filed 1996·Granted Sep 5, 2000·230 cites·16 claims
- 2696US7879683B2Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delayAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·35 cites·17 claims
- 2796US7422776B2Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·33 cites·7 claims
- 2896US7244672B2Selective etching of organosilicate films over silicon oxide stop etch layersAPPLIED MATERIALS INC·Filed 2005·Granted Jul 17, 2007·36 cites·18 claims
- 2996US6890850B2Method of depositing dielectric materials in damascene applicationsAPPLIED MATERIALS INC·Filed 2002·Granted May 10, 2005·92 cites·27 claims
- 3096US6569257B1Method for cleaning a process chamberAPPLIED MATERIALS INC·Filed 2000·Granted May 27, 2003·86 cites·67 claims
- 3196US6486082B1CVD plasma assisted lower dielectric constant sicoh filmAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·80 cites·30 claims
- 3296US6465372B1Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashingAPPLIED MATERIALS INC·Filed 2000·Granted Oct 15, 2002·101 cites·15 claims
- 3396US6255222B1Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition processAPPLIED MATERIALS INC·Filed 1999·Granted Jul 3, 2001·157 cites·20 claims
- 3496US5994209AMethods and apparatus for forming ultra-shallow doped regions using doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 1996·Granted Nov 30, 1999·161 cites·18 claims
- 3596US5963840AMethods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditionsAPPLIED MATERIALS INC·Filed 1996·Granted Oct 5, 1999·200 cites·20 claims
- 3696US5935340AMethod and apparatus for gettering fluorine from chamber material surfacesAPPLIED MATERIALS INC·Filed 1996·Granted Aug 10, 1999·206 cites·12 claims
- 3795US7910491B2Gapfill improvement with low etch rate dielectric linersAPPLIED MATERIALS INC·Filed 2009·Granted Mar 22, 2011·90 cites·24 claims
- 3895US7112541B2In-situ oxide capping after CVD low k depositionAPPLIED MATERIALS INC·Filed 2004·Granted Sep 26, 2006·64 cites·20 claims
- 3995US6614181B1UV radiation source for densification of CVD carbon-doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 2000·Granted Sep 2, 2003·114 cites·6 claims
- 4095US6258735B1Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamberAPPLIED MATERIALS INC·Filed 2000·Granted Jul 10, 2001·84 cites·23 claims
- 4194US7226876B2Method of modifying interlayer adhesionAPPLIED MATERIALS INC·Filed 2005·Granted Jun 5, 2007·14 cites·7 claims
- 4294US7132353B1Boron diffusion barrier by nitrogen incorporation in spacer dielectricsAPPLIED MATERIALS INC·Filed 2005·Granted Nov 7, 2006·67 cites·36 claims
- 4394US6790788B2Method of improving stability in low k barrier layersAPPLIED MATERIALS INC·Filed 2003·Granted Sep 14, 2004·79 cites·26 claims
- 4494US6500773B1Method of depositing organosilicate layersAPPLIED MATERIALS INC·Filed 2000·Granted Dec 31, 2002·63 cites·39 claims
- 4593US7745328B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·12 cites·5 claims
- 4693US7056560B2Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2004·Granted Jun 6, 2006·59 cites·10 claims
- 4793US6797643B2Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF powerAPPLIED MATERIALS INC·Filed 2002·Granted Sep 28, 2004·84 cites·24 claims
- 4893US6486061B1Post-deposition treatment to enhance properties of Si-O-C low K filmsAPPLIED MATERIALS INC·Filed 2000·Granted Nov 26, 2002·83 cites·13 claims
- 4992US12125675B2RF pulsing assisted low-k film deposition with high mechanical strengthAPPLIED MATERIALS INC·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
- 5092US10319583B2Selective deposition of silicon nitride films for spacer applicationsAPPLIED MATERIALS INC·Filed 2017·Granted Jun 11, 2019·7 cites·18 claims
Showing the top 50 of 268 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →