Inventor

YANG PO-YU

TW70 patents

⚠️ This page may combine multiple inventors who share the name “YANG PO-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG PO-YU

UNITED MICROELECTRONICS CORP

High electron mobility transistor with improved barrier layer

Gate-all-around nanowire field-effect transistor device

Semiconductor device

Manufacturing method of semiconductor device

Manufacturing method of semiconductor device

Semiconductor device with conformal dielectric layer and fabricating method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device

Semiconductor structure with nano-twinned metal coating layer and fabrication method thereof

Resistive memory device and manufacturing method thereof

Method of adjusting signal to noise ratio of SRAM and invertor structure

High electron mobility transistor and method for fabricating the same

Semiconductor device and fabricating method thereof

High electron mobility transistor and method for forming the same using the metal gate layer and spacer as an etch mask

Semiconductor die

High electron mobility transistor with improved barrier layer

Method of fabricating semiconductor device

HEMT with stair-like compound layer at drain

High electron mobility transistor and method for forming the same

Semiconductor device

Semiconductor structure

High electron mobility transistor and method for fabricating the same

HEMT and method of fabricating the same

Semiconductor device

Semiconductor device and method of fabricating the same

Semiconductor die and manufacturing method of semiconductor device

HEMT and method of fabricating the same

Semiconductor device

Semiconductor device and method of fabricating the same

High electron mobility transistor with improved barrier layer

Silicon on insulator (SOI) device and forming method thereof

Manufacturing method of resistive memory device

HEMT and method of fabricating the same

Method of forming multi-bit resistive random access memory cell

HEMT and method of fabricating the same

Semiconductor structure

Semiconductor device and method of fabricating the same

Hybrid bonding structure and method of fabricating the same

High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same

Method for manufacturing high electron mobility transistor with at least two barrier layers

High electron mobility transistor with trench isolation structure capable of applying stress

Method for fabricating semiconductor device with asymmetric strained source/drain structure

Method for fabricating semiconductor device with asymmetric strained source/drain structure

Method for forming transistor with strained channel

Multi-bit resistive random access memory cell and forming method thereof

High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same

Nanowire transistor structure and nanowire inverter structure

GETAC TECHNOLOGY CORP

Artificial neural network-based method for selecting surface type of object

Method for regulating position of object

QUANTA COMP INC

Vibration isolation apparatus for server rack delivery