Semiconductor device

Abstract

A semiconductor device includes a substrate and a first transistor disposed on the substrate. The first transistor includes a first semiconductor channel structure and two first source/drain structures. The first semiconductor channel structure includes first horizontal portions and a first vertical portion. The first horizontal portions are stacked in a vertical direction and separated from one another. Each of the first horizontal portions is elongated in a horizontal direction. The first vertical portion is elongated in the vertical direction and connected with the first horizontal portions. A material composition of the first vertical portion is identical to a material composition of each of the first horizontal portions. The two first source/drain structures are disposed at two opposite sides of each of the first horizontal portions in the horizontal direction respectively. The two first source/drain structures are connected with the first horizontal portions.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a substrate; and 
 a first transistor disposed on the substrate, the first transistor comprising:
 a first semiconductor channel structure, wherein the first semiconductor channel structure comprises:
 first horizontal portions stacked in a vertical direction and separated from one another, wherein each of the first horizontal portions is elongated in a horizontal direction; and 
 a first vertical portion elongated in the vertical direction and connected with the first horizontal portions, wherein a material composition of the first vertical portion is identical to a material composition of each of the first horizontal portions; 
 
 two first source/drain structures disposed at two opposite sides of each of the first horizontal portions in the horizontal direction respectively, wherein the two first source/drain structures are connected with the first horizontal portions; and 
 a first gate structure encompassing the first horizontal portions and the first vertical portion of the first semiconductor channel structure, wherein a part of the first gate structure is disposed between the first vertical portion of the first semiconductor channel structure and the substrate in the vertical direction. 
 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the first vertical portion is directly connected with each of the first horizontal portions. 
     
     
       3. The semiconductor device according to  claim 1 , wherein the first vertical portion penetrates through each of the first horizontal portions in the vertical direction. 
     
     
       4. The semiconductor device according to  claim 1 , wherein at least a part of each of the first horizontal portions is disposed at two opposite sides of the first vertical portion in a direction orthogonal to the vertical direction. 
     
     
       5. The semiconductor device according to  claim 1 , further comprising:
 a second transistor disposed on the substrate, the second transistor comprising:
 a second semiconductor channel structure, wherein the second semiconductor channel structure comprises:
 second horizontal portions stacked in the vertical direction and separated from one another, wherein each of the second horizontal portions is elongated in the horizontal direction; and 
 
 two second source/drain structures disposed at two opposite sides of each of the second horizontal portions in the horizontal direction respectively, wherein the two second source/drain structures are connected with the second horizontal portions. 
 
 
     
     
       6. The semiconductor device according to  claim 5 , wherein a material composition of each of the second horizontal portions of the second semiconductor channel structure is different from the material composition of each of the first horizontal portions of the first semiconductor channel structure. 
     
     
       7. The semiconductor device according to  claim 5 , wherein a conductivity type of the second semiconductor channel structure is complementary to a conductivity type of the first semiconductor channel structure. 
     
     
       8. The semiconductor device according to  claim 5 , wherein the second transistor further comprises a second gate structure encompassing the second horizontal portions of the second semiconductor channel structure. 
     
     
       9. The semiconductor device according to  claim 8 , wherein the second gate structure is separated from the first gate structure. 
     
     
       10. The semiconductor device according to  claim 8 , wherein the second gate structure is directly connected with the first gate structure. 
     
     
       11. The semiconductor device according to  claim 8 , wherein the second gate structure is disposed between the first gate structure and the substrate in the vertical direction, and the second semiconductor channel structure is disposed between the first semiconductor channel structure and the substrate in the vertical direction. 
     
     
       12. The semiconductor device according to  claim 8 , wherein the second semiconductor channel structure further comprises:
 a second vertical portion elongated in the vertical direction and connected with the second horizontal portions, wherein a material composition of the second vertical portion is identical to a material composition of each of the second horizontal portions, and the second gate structure further encompasses the second vertical portion of the second semiconductor channel structure. 
 
     
     
       13. The semiconductor device according to  claim 12 , wherein the second vertical portion penetrates through each of the second horizontal portions in the vertical direction. 
     
     
       14. The semiconductor device according to  claim 12 , wherein at least a part of each of the second horizontal portions is disposed at two opposite sides of the second vertical portion in a direction orthogonal to the vertical direction. 
     
     
       15. The semiconductor device according to  claim 5 , further comprising:
 a dielectric layer disposed between one of the two first source/drain structures and one of the two second source/drain structure in the vertical direction. 
 
     
     
       16. The semiconductor device according to  claim 5 , wherein the first transistor is a p-type transistor and the second transistor is an n-type transistor. 
     
     
       17. The semiconductor device according to  claim 5 , wherein the first transistor and the second transistor are disposed adjacent to each other in a direction orthogonal to the vertical direction and separated from each other.