P

Inventor

PAUL BIPUL C

US68 patents
⚠️ This page may combine multiple inventors who share the name “PAUL BIPUL C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

30 patents
US10840146B1Nov 17, 2020

Structures and SRAM bit cells with a buried cross-couple interconnect

GLOBALFOUNDRIES INC62 citations98
US10332803B1Jun 25, 2019

Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming

GLOBALFOUNDRIES INC83 citations98
US10170484B1Jan 1, 2019

Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method

GLOBALFOUNDRIES INC61 citations98
US10236215B1Mar 19, 2019

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

GLOBALFOUNDRIES INC22 citations94
US10109637B1Oct 23, 2018

Cross couple structure for vertical transistors

GLOBALFOUNDRIES INC20 citations94
US9825032B1Nov 21, 2017

Metal layer routing level for vertical FET SRAM and logic cell scaling

GLOBALFOUNDRIES INC41 citations94
US10818674B2Oct 27, 2020

Structures and SRAM bit cells integrating complementary field-effect transistors

GLOBALFOUNDRIES INC12 citations86
US10756096B2Aug 25, 2020

Integrated circuit structure with complementary field effect transistor and buried metal interconnect and method

GLOBALFOUNDRIES INC13 citations86
US10304833B1May 28, 2019

Method of forming complementary nano-sheet/wire transistor devices with same depth contacts

GLOBALFOUNDRIES INC19 citations86
US10418449B2Sep 17, 2019

Circuits based on complementary field-effect transistors

GLOBALFOUNDRIES INC14 citations85
US10707218B2Jul 7, 2020

Two port SRAM cell using complementary nano-sheet/wire transistor devices

GLOBALFOUNDRIES INC9 citations84
US10651284B2May 12, 2020

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

GLOBALFOUNDRIES INC7 citations84
US10418368B1Sep 17, 2019

Buried local interconnect in source/drain region

GLOBALFOUNDRIES INC7 citations84
US10056377B2Aug 21, 2018

Metal layer routing level for vertical FET SRAM and logic cell scaling

GLOBALFOUNDRIES INC9 citations84
US9761662B1Sep 12, 2017

Active area shapes reducing device size

GLOBALFOUNDRIES INC9 citations84
US10665281B1May 26, 2020

Resistive nonvolatile memory cells with shared access transistors

GLOBALFOUNDRIES INC9 citations83
US10777607B1Sep 15, 2020

Bitcells for a non-volatile memory device

GLOBALFOUNDRIES INC2 citations73
US10720391B1Jul 21, 2020

Method of forming a buried interconnect and the resulting devices

GLOBALFOUNDRIES INC2 citations73
US10515679B2Dec 24, 2019

Magneto-resistive memory structures with improved sensing, and associated sensing methods

GLOBALFOUNDRIES INC2 citations73
US10510392B1Dec 17, 2019

Integrated circuits having memory cells with shared bit lines and shared source lines

GLOBALFOUNDRIES INC2 citations73
US10403629B2Sep 3, 2019

Six-transistor (6T) SRAM cell structure

GLOBALFOUNDRIES INC5 citations73
US9929236B1Mar 27, 2018

Active area shapes reducing device size

GLOBALFOUNDRIES INC3 citations73
US10236296B1Mar 19, 2019

Cross-coupled contact structure on IC products and methods of making such contact structures

GLOBALFOUNDRIES INC2 citations72
US10685951B1Jun 16, 2020

Wordline strapping for non-volatile memory elements

GLOBALFOUNDRIES INC2 citations71
US8751985B1Jun 10, 2014

Hierarchical layout versus schematic (LVS) comparison with extraneous device elimination

GLOBALFOUNDRIES INC5 citations71
US9202552B2Dec 1, 2015

Dual port SRAM bitcell structures with improved transistor arrangement

GLOBALFOUNDRIES INC4 citations69
US10811069B2Oct 20, 2020

Non-volatile memory elements with multiple access transistors

GLOBALFOUNDRIES INC2 citations68
US10586581B1Mar 10, 2020

Dynamic bipolar write-assist for non-volatile memory elements

GLOBALFOUNDRIES INC5 citations68
US10629602B2Apr 21, 2020

Static random access memory cells with arranged vertical-transport field-effect transistors

GLOBALFOUNDRIES INC1 citations63
US10439064B1Oct 8, 2019

Dual port vertical transistor memory cell

GLOBALFOUNDRIES INC1 citations63

GLOBALFOUNDRIES US INC

15 patents
US12002869B2Jun 4, 2024

Gate contact structures and cross-coupled contact structures for transistor devices

GLOBALFOUNDRIES US INC4 citations74
US11309319B2Apr 19, 2022

Structures and SRAM bit cells integrating complementary field-effect transistors

GLOBALFOUNDRIES US INC3 citations73
US11004509B1May 11, 2021

Circuit structure and memory circuit with resistive memory elements, and related methods

GLOBALFOUNDRIES US INC2 citations73
US10950610B2Mar 16, 2021

Asymmetric gate cut isolation for SRAM

GLOBALFOUNDRIES US INC3 citations73
US11087814B2Aug 10, 2021

Sensing scheme for STT-MRAM using low-barrier nanomagnets

GLOBALFOUNDRIES US INC2 citations72
US11475941B2Oct 18, 2022

Non-volatile transistor embedded static random access memory (SRAM) cell

GLOBALFOUNDRIES US INC4 citations71
US11587601B1Feb 21, 2023

Apparatus and method for controlled transmitting of read pulse and write pulse in memory

GLOBALFOUNDRIES US INC2 citations66
US12532534B2Jan 20, 2026

Transistor arrays with controllable gate voltage

GLOBALFOUNDRIES US INC0 citations62
US12176023B2Dec 24, 2024

Non-volatile static random access memory bit cells with ferroelectric field-effect transistors

GLOBALFOUNDRIES US INC0 citations62
US11776606B2Oct 3, 2023

Sensing scheme for STT-MRAM using low-barrier nanomagnets

GLOBALFOUNDRIES US INC0 citations62
US11469309B2Oct 11, 2022

Gate contact structures and cross-coupled contact structures for transistor devices

GLOBALFOUNDRIES US INC0 citations62
US11120857B2Sep 14, 2021

Low variability reference parameter generation for magnetic random access memory

GLOBALFOUNDRIES US INC1 citations62
US12432936B2Sep 30, 2025

Capacitor integrated with memory element of memory cell

GLOBALFOUNDRIES US INC0 citations61
US11004491B2May 11, 2021

Twisted wordline structures

GLOBALFOUNDRIES US INC0 citations61
US12051465B2Jul 30, 2024

Sense circuit and high-speed memory structure incorporating the sense circuit

GLOBALFOUNDRIES US INC0 citations60

PAUL BIPUL C

3 patents

TOSHIBA AMERICA RES INC

2 patents

Showing the top 50 of 68 patents by PatentIndex Score.