Inventor
BANERJEE SANJAY K
US15 patents
⚠️ This page may combine multiple inventors who share the name “BANERJEE SANJAY K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
6 patentsUS4713678ADec 15, 1987
dRAM cell and method
TEXAS INSTRUMENTS INC75 citations96
US5066607ANov 19, 1991
Method of making a trench DRAM cell with dynamic gain
TEXAS INSTRUMENTS INC89 citations95
US4864374ASep 5, 1989
Two-transistor dram cell with high alpha particle immunity
TEXAS INSTRUMENTS INC81 citations95
US4999811AMar 12, 1991
Trench DRAM cell with dynamic gain
TEXAS INSTRUMENTS INC54 citations92
US5109259AApr 28, 1992
Multiple DRAM cells in a trench
TEXAS INSTRUMENTS INC16 citations73
US4969019ANov 6, 1990
Three-terminal tunnel device
TEXAS INSTRUMENTS INC11 citations73
UNIV TEXAS
5 patentsUS6313486B1Nov 6, 2001
Floating gate transistor having buried strained silicon germanium channel layer
UNIV TEXAS145 citations98
US6313487B1Nov 6, 2001
Vertical channel floating gate transistor having silicon germanium channel layer
UNIV TEXAS69 citations96
US5436474AJul 25, 1995
Modulation doped field effect transistor having built-in drift field
UNIV TEXAS30 citations91
US5432366AJul 11, 1995
P-I-N MOSFET for ULSI applications
UNIV TEXAS25 citations88
US9825218B2Nov 21, 2017
Transistor that employs collective magnetic effects thereby providing improved energy efficiency
UNIV TEXAS0 citations34