P

Inventor

LEE KUO-HSING

US47 patents
⚠️ This page may combine multiple inventors who share the name “LEE KUO-HSING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

42 patents
US11296214B2Apr 5, 2022

High electron mobility transistor (HEMT) and forming method thereof

UNITED MICROELECTRONICS CORP18 citations93
US12245424B2Mar 4, 2025

One-time programmable memory capacitor structure and manufacturing method thereof

UNITED MICROELECTRONICS CORP2 citations74
US11316031B2Apr 26, 2022

Method of forming fin forced stack inverter

UNITED MICROELECTRONICS CORP2 citations73
US11854632B2Dec 26, 2023

Semiconductor memory structure and fabrication method thereof

UNITED MICROELECTRONICS CORP2 citations72
US11631761B2Apr 18, 2023

High electron mobility transistor (HEMT) and forming method thereof

UNITED MICROELECTRONICS CORP1 citations72
US11450670B1Sep 20, 2022

Semiconductor memory cell and the forming method thereof

UNITED MICROELECTRONICS CORP2 citations72
US10991757B2Apr 27, 2021

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP1 citations72
US10985211B1Apr 20, 2021

Embedded MRAM structure and method of fabricating the same

UNITED MICROELECTRONICS CORP3 citations71
US10867999B2Dec 15, 2020

Semiconductor device and method of forming the same

UNITED MICROELECTRONICS CORP5 citations69
US12500115B2Dec 16, 2025

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12419060B2Sep 16, 2025

Data storage cell, memory, and memory fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations62
US12396194B2Aug 19, 2025

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12261169B2Mar 25, 2025

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12206018B2Jan 21, 2025

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12009415B2Jun 11, 2024

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11973133B2Apr 30, 2024

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11956974B2Apr 9, 2024

Data storage cell, memory, and memory fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations62
US11856867B2Dec 26, 2023

MRAM having multilayered interconnect structures

UNITED MICROELECTRONICS CORP0 citations62
US11705512B2Jul 18, 2023

High electron mobility transistor (HEMT) and forming method thereof

UNITED MICROELECTRONICS CORP0 citations62
US11688800B2Jun 27, 2023

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12389593B2Aug 12, 2025

One-time programmable memory cell

UNITED MICROELECTRONICS CORP0 citations61
US12200947B2Jan 14, 2025

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US12150314B2Nov 19, 2024

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US12132043B2Oct 29, 2024

Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

UNITED MICROELECTRONICS CORP0 citations61
US12119342B2Oct 15, 2024

Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

UNITED MICROELECTRONICS CORP0 citations61
US11895847B2Feb 6, 2024

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11864391B2Jan 2, 2024

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11825648B2Nov 21, 2023

One-time programmable memory structure

UNITED MICROELECTRONICS CORP0 citations61
US11665891B2May 30, 2023

One-time programmable memory cell and fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations61
US11631664B2Apr 18, 2023

Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

UNITED MICROELECTRONICS CORP0 citations61
US11569295B2Jan 31, 2023

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11532666B2Dec 20, 2022

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11765891B2Sep 19, 2023

One-time programmable (OTP) memory cell and fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations60
US11605631B2Mar 14, 2023

3D semiconductor structure and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations60
US11195831B2Dec 7, 2021

3D semiconductor structure and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations60
US11322215B1May 3, 2022

One-time programmable memory device

UNITED MICROELECTRONICS CORP0 citations57
US11778814B2Oct 3, 2023

One-time programmable memory device

UNITED MICROELECTRONICS CORP0 citations52
US10580883B2Mar 3, 2020

1-1 fin forced stack inverter

UNITED MICROELECTRONICS CORP0 citations52
US12133377B2Oct 29, 2024

Bit cell structure for one-time-programming

UNITED MICROELECTRONICS CORP0 citations51
US10700126B2Jun 30, 2020

Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel

UNITED MICROELECTRONICS CORP0 citations51
US10692928B1Jun 23, 2020

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations51
US12477814B2Nov 18, 2025

Semiconductor device and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations50

(unassigned)

2 patents

LEE KUO HSING

2 patents

IND TECH RES INST

1 patent