One-time programmable memory device

Abstract

A one-time programmable (OTP) memory device includes a first memory cell, which further includes a first source line extending along a first direction on a substrate, a first word line extending along the first direction on one side of the first source line, a second word line extending along the first direction on another side of the first source line, a first diffusion region extending along a second direction adjacent to two sides of the first word line and the second word line, and a first metal interconnection connecting the first word line and the second word line.

What is claimed is: 
     
       1. An one-time programmable (OTP) memory device, comprising:
 a first memory cell comprising:
 a first source line extending along a first direction on a substrate; 
 a first word line extending along the first direction on one side of the first source line; 
 a second word line extending along the first direction on another side of the first source line; 
 a first diffusion region extending along a second direction adjacent to two sides of the first word line and the second word line; and 
 a first metal interconnection connecting the first word line and the second word line. 
 
 
     
     
       2. The OTP memory device of  claim 1 , wherein the first diffusion region is disposed between the first word line and the first source line. 
     
     
       3. The OTP memory device of  claim 1 , wherein the first diffusion region is disposed between the first source line and the second word line. 
     
     
       4. The OTP memory device of  claim 1 , wherein the first memory cell further comprises a first bit line contact disposed on the first diffusion region adjacent to one side of the first word line. 
     
     
       5. The OTP memory device of  claim 1 , wherein the first memory cell further comprises a second bit line contact disposed on the first diffusion region adjacent to one side of the second word line. 
     
     
       6. The OTP memory device of  claim 1 , further comprising a second memory cell, the second memory cell comprising:
 the first source line extending along the first direction; 
 the first word line extending along the first direction on one side of the first source line; 
 the second word line extending along the first direction on another side of the first source line; and 
 a second diffusion region extending along the second direction adjacent to two sides of the first word line and the second word line. 
 
     
     
       7. The OTP memory device of  claim 6 , wherein the second diffusion region is disposed between the first word line and the first source line. 
     
     
       8. The OTP memory device of  claim 6 , wherein the second diffusion region is disposed between the first source line and the second word line. 
     
     
       9. The OTP memory device of  claim 6 , wherein the second memory cell further comprises a third bit line contact disposed on the second diffusion region adjacent to one side of the first word line. 
     
     
       10. The OTP memory device of  claim 1 , wherein the second memory cell further comprises a fourth bit line contact disposed on the second diffusion region adjacent to one side of the second word line. 
     
     
       11. The OTP memory device of  claim 6 , further comprising a third memory cell, the third memory cell comprising:
 a second source line extending along the first direction on one side of the first word line; 
 a third word line extending along the first direction on one side of the second source line; 
 a fourth word line extending along the first direction on another side of the second source line; 
 the first diffusion region extending along the second direction adjacent to two sides of the third word line and the fourth word line; and 
 a second metal interconnection connecting the third word line and the fourth word line. 
 
     
     
       12. The OTP memory device of  claim 11 , wherein the first diffusion region is disposed between the third word line and the second source line. 
     
     
       13. The OTP memory device of  claim 11 , wherein the first diffusion region is disposed between the second source line and the fourth word line. 
     
     
       14. The OTP memory device of  claim 11 , further comprising a fourth memory cell, the fourth memory cell comprising:
 the second source line extending along the first direction on one side of the first word line;
 the third word line extending along the first direction on one side of the second source line; 
 the fourth word line extending along the first direction on another side of the second source line; and 
 the second diffusion region extending along the second direction adjacent to two sides of the third word line and the fourth word line. 
 
 
     
     
       15. The OTP memory device of  claim 14 , wherein the second diffusion region is disposed between the third word line and the second source line. 
     
     
       16. The OTP memory device of  claim 14 , wherein the second diffusion region is disposed between the second source line and the fourth word line.