P

Inventor

KURIYAMA HIROTADA

JP43 patents
⚠️ This page may combine multiple inventors who share the name “KURIYAMA HIROTADA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

38 patents
US6359804B2Mar 19, 2002

Static semiconductor memory cell formed in an n-well and p-well

MITSUBISHI ELECTRIC CORP126 citations99
US5994735ANov 30, 1999

Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof

MITSUBISHI ELECTRIC CORP178 citations99
US5780888AJul 14, 1998

Semiconductor device with storage node

MITSUBISHI ELECTRIC CORP94 citations99
US5627390AMay 6, 1997

Semiconductor device with columns

MITSUBISHI ELECTRIC CORP200 citations99
US5689458ANov 18, 1997

Semiconductor memory device having negative resistance element operated stably with single low power source

MITSUBISHI ELECTRIC CORP108 citations98
US6420751B1Jul 16, 2002

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP73 citations96
US6383860B2May 7, 2002

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP36 citations96
US6303425B1Oct 16, 2001

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP45 citations96
US6150688ANov 21, 2000

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP75 citations96
US6127209AOct 3, 2000

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP73 citations96
US5774393AJun 30, 1998

Semiconductor memory device capable of operating at high speed and stably even low power supply voltage

MITSUBISHI ELECTRIC CORP55 citations96
US5886388AMar 23, 1999

Static semiconductor memory device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP26 citations93
US5673230ASep 30, 1997

Semiconductor memory device capable of operating at high speed and stably even under low power supply voltage

MITSUBISHI ELECTRIC CORP26 citations93
US5596212AJan 21, 1997

Semiconductor memory device and a manufacturing method of the same

MITSUBISHI ELECTRIC CORP29 citations93
US5517038AMay 14, 1996

Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration

MITSUBISHI ELECTRIC CORP22 citations93
US5341327AAug 23, 1994

Static random access type semiconductor memory device

MITSUBISHI ELECTRIC CORP30 citations93
US5384731AJan 24, 1995

SRAM memory structure and manufacturing method thereof

MITSUBISHI ELECTRIC CORP20 citations92
US4811155AMar 7, 1989

Protection circuit for a semiconductor integrated circuit having bipolar transistors

MITSUBISHI ELECTRIC CORP26 citations89
US5838609ANov 17, 1998

Integrated semiconductor device having negative resistance formed of MIS switching diode

MITSUBISHI ELECTRIC CORP16 citations82
US5619056AApr 8, 1997

SRAM semiconductor device

MITSUBISHI ELECTRIC CORP13 citations82
US6255719B1Jul 3, 2001

Semiconductor device including thermal neutron absorption material

MITSUBISHI ELECTRIC CORP16 citations81
US6657885B2Dec 2, 2003

Static semiconductor memory device

MITSUBISHI ELECTRIC CORP6 citations74
US6441448B1Aug 27, 2002

Semiconductor storage device

MITSUBISHI ELECTRIC CORP10 citations74
US6030548AFeb 29, 2000

SRAM memory device having reduced size

MITSUBISHI ELECTRIC CORP8 citations74
US5994719ANov 30, 1999

SRAM semiconductor device

MITSUBISHI ELECTRIC CORP5 citations74
US5945715AAug 31, 1999

Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same

MITSUBISHI ELECTRIC CORP16 citations74
US5841153ANov 24, 1998

SRAM semiconductor device

MITSUBISHI ELECTRIC CORP12 citations74
US5818080AOct 6, 1998

Semiconductor memory device including a memory cell region of six transistors

MITSUBISHI ELECTRIC CORP10 citations74
US5717240AFeb 10, 1998

Static semiconductor memory device

MITSUBISHI ELECTRIC CORP10 citations74
US6501178B1Dec 31, 2002

Semiconductor device

MITSUBISHI ELECTRIC CORP8 citations73
US5463576AOct 31, 1995

Semiconductor memory device including memory cells connected to a ground line

MITSUBISHI ELECTRIC CORP8 citations73
US5379247AJan 3, 1995

Semiconductor memory device including memory cells connected to a ground line

MITSUBISHI ELECTRIC CORP9 citations73
US5859444AJan 12, 1999

Semiconductor device

MITSUBISHI ELECTRIC CORP9 citations70
US6563165B2May 13, 2003

Non-volatile semiconductor memory device and method for producing the same

MITSUBISHI ELECTRIC CORP2 citations63
US6242786B1Jun 5, 2001

SOI Semiconductor device with field shield electrode

MITSUBISHI ELECTRIC CORP2 citations63
US5981990ANov 9, 1999

Semiconductor memory device, method of manufacturing the same and method of using the same

MITSUBISHI ELECTRIC CORP2 citations63
USRE36531EJan 25, 2000

Semiconductor memory device including memory cells connected to a ground line

MITSUBISHI ELECTRIC CORP4 citations62
US5550390AAug 27, 1996

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP0 citations38

RENESAS TECH CORP

5 patents