Inventor
KURIYAMA HIROTADA
JP43 patents
⚠️ This page may combine multiple inventors who share the name “KURIYAMA HIROTADA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
38 patentsUS6359804B2Mar 19, 2002
Static semiconductor memory cell formed in an n-well and p-well
MITSUBISHI ELECTRIC CORP126 citations99
US5994735ANov 30, 1999
Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof
MITSUBISHI ELECTRIC CORP178 citations99
US5780888AJul 14, 1998
Semiconductor device with storage node
MITSUBISHI ELECTRIC CORP94 citations99
US5627390AMay 6, 1997
Semiconductor device with columns
MITSUBISHI ELECTRIC CORP200 citations99
US5689458ANov 18, 1997
Semiconductor memory device having negative resistance element operated stably with single low power source
MITSUBISHI ELECTRIC CORP108 citations98
US6420751B1Jul 16, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP73 citations96
US6383860B2May 7, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP36 citations96
US6303425B1Oct 16, 2001
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP45 citations96
US6150688ANov 21, 2000
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP75 citations96
US6127209AOct 3, 2000
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP73 citations96
US5774393AJun 30, 1998
Semiconductor memory device capable of operating at high speed and stably even low power supply voltage
MITSUBISHI ELECTRIC CORP55 citations96
US5886388AMar 23, 1999
Static semiconductor memory device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP26 citations93
US5673230ASep 30, 1997
Semiconductor memory device capable of operating at high speed and stably even under low power supply voltage
MITSUBISHI ELECTRIC CORP26 citations93
US5596212AJan 21, 1997
Semiconductor memory device and a manufacturing method of the same
MITSUBISHI ELECTRIC CORP29 citations93
US5517038AMay 14, 1996
Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration
MITSUBISHI ELECTRIC CORP22 citations93
US5341327AAug 23, 1994
Static random access type semiconductor memory device
MITSUBISHI ELECTRIC CORP30 citations93
US5384731AJan 24, 1995
SRAM memory structure and manufacturing method thereof
MITSUBISHI ELECTRIC CORP20 citations92
US4811155AMar 7, 1989
Protection circuit for a semiconductor integrated circuit having bipolar transistors
MITSUBISHI ELECTRIC CORP26 citations89
US5838609ANov 17, 1998
Integrated semiconductor device having negative resistance formed of MIS switching diode
MITSUBISHI ELECTRIC CORP16 citations82
US5619056AApr 8, 1997
SRAM semiconductor device
MITSUBISHI ELECTRIC CORP13 citations82
US6255719B1Jul 3, 2001
Semiconductor device including thermal neutron absorption material
MITSUBISHI ELECTRIC CORP16 citations81
US6657885B2Dec 2, 2003
Static semiconductor memory device
MITSUBISHI ELECTRIC CORP6 citations74
US6441448B1Aug 27, 2002
Semiconductor storage device
MITSUBISHI ELECTRIC CORP10 citations74
US6030548AFeb 29, 2000
SRAM memory device having reduced size
MITSUBISHI ELECTRIC CORP8 citations74
US5994719ANov 30, 1999
SRAM semiconductor device
MITSUBISHI ELECTRIC CORP5 citations74
US5945715AAug 31, 1999
Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same
MITSUBISHI ELECTRIC CORP16 citations74
US5841153ANov 24, 1998
SRAM semiconductor device
MITSUBISHI ELECTRIC CORP12 citations74
US5818080AOct 6, 1998
Semiconductor memory device including a memory cell region of six transistors
MITSUBISHI ELECTRIC CORP10 citations74
US5717240AFeb 10, 1998
Static semiconductor memory device
MITSUBISHI ELECTRIC CORP10 citations74
US6501178B1Dec 31, 2002
Semiconductor device
MITSUBISHI ELECTRIC CORP8 citations73
US5463576AOct 31, 1995
Semiconductor memory device including memory cells connected to a ground line
MITSUBISHI ELECTRIC CORP8 citations73
US5379247AJan 3, 1995
Semiconductor memory device including memory cells connected to a ground line
MITSUBISHI ELECTRIC CORP9 citations73
US5859444AJan 12, 1999
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations70
US6563165B2May 13, 2003
Non-volatile semiconductor memory device and method for producing the same
MITSUBISHI ELECTRIC CORP2 citations63
US6242786B1Jun 5, 2001
SOI Semiconductor device with field shield electrode
MITSUBISHI ELECTRIC CORP2 citations63
US5981990ANov 9, 1999
Semiconductor memory device, method of manufacturing the same and method of using the same
MITSUBISHI ELECTRIC CORP2 citations63
USRE36531EJan 25, 2000
Semiconductor memory device including memory cells connected to a ground line
MITSUBISHI ELECTRIC CORP4 citations62
US5550390AAug 27, 1996
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP0 citations38
RENESAS TECH CORP
5 patentsUS6882006B2Apr 19, 2005
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP60 citations96
US6703953B2Mar 9, 2004
Semiconductor device, method of manufacturing semiconductor device and communication method
RENESAS TECH CORP26 citations93
US7321152B2Jan 22, 2008
Thin-film transistor and method of fabricating the same
RENESAS TECH CORP1 citations62
US7112854B1Sep 26, 2006
Thin-film transistor and method of fabricating the same
RENESAS TECH CORP2 citations62
US7187040B2Mar 6, 2007
Thin-film transistor and method of fabricating the same
RENESAS TECH CORP0 citations52