Inventor · disambiguated record
Gordon K. Madson
Also filed as: MADSON GORDON K
9 granted patents·3 pending applications·341 citations·filing 1999–2012
91Inventor score
Files withFAIRCHILD SEMICONDUCTOR5CHALLA ASHOK2FAIRFIELD SEMICONDUCTOR CORP1MADSON GORDON K1WOOLSEY DEBRA S1
Top patents by PatentIndex Score
12 records- 0197US8143124B2Methods of making power semiconductor devices with thick bottom oxide layerCHALLA ASHOK·Filed 2008·Granted Mar 27, 2012·148 cites·6 claims
- 0290US8936985B2Methods related to power semiconductor devices with thick bottom oxide layersCHALLA ASHOK·Filed 2012·Granted Jan 20, 2015·6 cites·12 claims
- 0390US7553740B2Structure and method for forming a minimum pitch trench-gate FET with heavy body regionFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jun 30, 2009·19 cites·32 claims
- 0490US6635534B2Method of manufacturing a trench MOSFET using selective growth epitaxyFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Oct 21, 2003·61 cites·21 claims
- 0585US8497549B2Method and structure for shielded gate trench FETMADSON GORDON K·Filed 2007·Granted Jul 30, 2013·19 cites·24 claims
- 0679US6391699B1Method of manufacturing a trench MOSFET using selective growth epitaxyFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted May 21, 2002·24 cites·13 claims
- 0770US6291310B1Method of increasing trench density for semiconductorFAIRFIELD SEMICONDUCTOR CORP·Filed 1999·Granted Sep 18, 2001·35 cites·12 claims
- 0859US6825087B1Hydrogen anneal for creating an enhanced trench for trench MOSFETSFAIRCHILD SEMICONDUCTOR·Filed 1999·Granted Nov 30, 2004·23 cites·18 claims
- 0955US6576954B2Trench MOSFET formed using selective epitaxial growthFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jun 10, 2003·6 cites·7 claims
- 1043US2010187602A1Methods for making semiconductor devices using nitride consumption locos oxidationWOOLSEY DEBRA S·Filed 2009·Application pending·0 cites
- 1140US2008199995A1Integrated Hydrogen Anneal and Gate Oxidation for Improved Gate Oxide IntegrityWOOLSEY DEBRA SUSAN·Filed 2007·Application pending·0 cites
- 1237US2001034109A1Trench seimconductor devices reduced trench pitchFiled 2001·Application pending·0 cites
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