Inventor
SIMS JAMES S
US18 patents
⚠️ This page may combine multiple inventors who share the name “SIMS JAMES S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
8 patentsUS7214630B1May 8, 2007
PMOS transistor with compressive dielectric capping layer
NOVELLUS SYSTEMS INC511 citations99
US7745346B2Jun 29, 2010
Method for improving process control and film conformality of PECVD film
NOVELLUS SYSTEMS INC538 citations96
US7906817B1Mar 15, 2011
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC40 citations92
US7041543B1May 9, 2006
Strained transistor architecture and method
NOVELLUS SYSTEMS INC32 citations88
US8362571B1Jan 29, 2013
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC5 citations84
US7998881B1Aug 16, 2011
Method for making high stress boron-doped carbon films
NOVELLUS SYSTEMS INC11 citations84
US7327001B1Feb 5, 2008
PMOS transistor with compressive dielectric capping layer
NOVELLUS SYSTEMS INC16 citations84
US9598770B2Mar 21, 2017
Contoured showerhead for improved plasma shaping and control
NOVELLUS SYSTEMS INC0 citations52
LAM RES CORP
6 patentsUS9824884B1Nov 21, 2017
Method for depositing metals free ald silicon nitride films using halide-based precursors
LAM RES CORP348 citations98
US9214333B1Dec 15, 2015
Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
LAM RES CORP539 citations98
US9076646B2Jul 7, 2015
Plasma enhanced atomic layer deposition with pulsed plasma exposure
LAM RES CORP81 citations95
US9589790B2Mar 7, 2017
Method of depositing ammonia free and chlorine free conformal silicon nitride film
LAM RES CORP22 citations94
US10020188B2Jul 10, 2018
Method for depositing ALD films using halide-based precursors
LAM RES CORP0 citations51
US12230495B2Feb 18, 2025
Method of depositing silicon nitride films
LAM RES CORP0 citations49
VARADARAJAN BHADRI
3 patentsUS8512818B1Aug 20, 2013
Cascaded cure approach to fabricate highly tensile silicon nitride films
VARADARAJAN BHADRI21 citations90
US8211510B1Jul 3, 2012
Cascaded cure approach to fabricate highly tensile silicon nitride films
VARADARAJAN BHADRI33 citations90
US9659769B1May 23, 2017
Tensile dielectric films using UV curing
VARADARAJAN BHADRI9 citations81