Inventor

NAGAHARA KIYOKAZU

JP51 patents

⚠️ This page may combine multiple inventors who share the name “NAGAHARA KIYOKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAGAHARA KIYOKAZU

NEC CORP

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

Domain wall motion element and magnetic random access memory

Magnetic domain wall random access memory

Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material

Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using it

Magnetoresistive effect composite head having a pole containing Co-M

Magnetoresistive effect composite head with configured pole tip

Magnetoresistance effect composite head and method of forming the same

Magnetoresistive effect composite head

Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer

Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material

Magnetoresistive head production method

Magneto-resistance effect element and magneto-resistance effect head

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

Compound magnetoresistive head and method for manufacturing same

Method for manufacturing a magnetoresistive effect composite having a pole containing Co-M

Method for making a merged head device

Thin film magnetic head with an improved surface to reduce the occurrence of head crash

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

FUKAMI SHUNSUKE

Magnetic memory device and magnetic random access memory

Magnetic random access memory, write method therefor, and magnetoresistance effect element

Magnetoresistive element, and magnetic random access memory

Magnetic random access memory

Magnetoresistance effect element and magnetic random access memory

Semiconductor device

Magnetic memory device and magnetic memory

Magnetic memory element, magnetic memory and initializing method

Magnetic random access memory

Magnetic memory element and magnetic memory

Magnetic memory element, magnetic memory and manufacturing method of magnetic memory

Magnetic memory and method of manufacturing the same

Method of initializing magnetic memory element

SONY CORP

Power supply apparatus for producing a constant DC voltage from a range of AC inputs

Power supply apparatus, method, and electronic apparatus

Complex resonant DC-DC converter and high voltage generating circuit driven in a plurality of frequency regions

Switching converter for generating a driving signal

Switching power supply with nonlinear characteristics at start up

NAGAHARA KIYOKAZU

Magnetic memory element and magnetic random access memory

Magnetic random access memory and method of manufacturing the same

Magnetic memory and manufacturing method thereof

SUZUKI TETSUHIRO

Non-volatile logic circuit

Magnetic random access memory and initializing method for the same

Magnetic random access memory and initializing method for the same

KARIYADA EIJI

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

ISHIWATA NOBUYUKI

Magnetic memory element and magnetic memory