Inventor
DEHM CHRISTINE
DE21 patents
⚠️ This page may combine multiple inventors who share the name “DEHM CHRISTINE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS6787832B2Sep 7, 2004
Semiconductor memory cell and semiconductor memory device
INFINEON TECHNOLOGIES AG23 citations92
US6468896B2Oct 22, 2002
Method of fabricating semiconductor components
INFINEON TECHNOLOGIES AG29 citations92
US6844581B2Jan 18, 2005
Storage capacitor and associated contact-making structure and a method for fabricating the storage capacitor and the contact-making structure
INFINEON TECHNOLOGIES AG12 citations83
US6559003B2May 6, 2003
Method of producing a ferroelectric semiconductor memory
INFINEON TECHNOLOGIES AG16 citations83
US6664158B2Dec 16, 2003
Ferroelectric memory configuration and a method for producing the configuration
INFINEON TECHNOLOGIES AG11 citations74
US6500677B2Dec 31, 2002
Method for fabricating a ferroelectric memory configuration
INFINEON TECHNOLOGIES AG13 citations72
US6670662B1Dec 30, 2003
Semiconductor storage component with storage cells, logic areas and filling structures
INFINEON TECHNOLOGIES AG5 citations63
US7115897B2Oct 3, 2006
Semiconductor circuit configuration and semiconductor memory device
INFINEON TECHNOLOGIES AG4 citations62
US7049628B2May 23, 2006
Semiconductor memory cell and semiconductor memory device
INFINEON TECHNOLOGIES AG2 citations62
US6958501B2Oct 25, 2005
Contact-making structure for a ferroelectric storage capacitor and method for fabricating the structure
INFINEON TECHNOLOGIES AG1 citations51
SIEMENS AG
6 patentsUS5804499ASep 8, 1998
Prevention of abnormal WSix oxidation by in-situ amorphous silicon deposition
SIEMENS AG53 citations96
US6228701B1May 8, 2001
Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs
SIEMENS AG38 citations92
US5674769AOct 7, 1997
Process for forming deep trench DRAMs with sub-groundrule gates
SIEMENS AG39 citations92
US5998253ADec 7, 1999
Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell
SIEMENS AG40 citations91
US6337239B1Jan 8, 2002
Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrier
SIEMENS AG14 citations84
US6656376B1Dec 2, 2003
Process for cleaning CVD units
SIEMENS AG7 citations71
ADVANCED TECH MATERIALS
3 patentsUS7005303B2Feb 28, 2006
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
ADVANCED TECH MATERIALS27 citations92
US6730523B2May 4, 2004
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
ADVANCED TECH MATERIALS17 citations92
US6303391B1Oct 16, 2001
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
ADVANCED TECH MATERIALS27 citations92