Inventor
CHU CHIH-HSUN
TW31 patents
⚠️ This page may combine multiple inventors who share the name “CHU CHIH-HSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOSEL VITELIC INC
12 patentsUS5972754AOct 26, 1999
Method for fabricating MOSFET having increased effective gate length
MOSEL VITELIC INC45 citations96
US6008106ADec 28, 1999
Micro-trench oxidation by using rough oxide mask for field isolation
MOSEL VITELIC INC88 citations94
US6114209ASep 5, 2000
Method of fabricating semiconductor devices with raised doped region structures
MOSEL VITELIC INC34 citations93
US6127699AOct 3, 2000
Method for fabricating MOSFET having increased effective gate length
MOSEL VITELIC INC36 citations92
US6077737AJun 20, 2000
Method for forming a DRAM having improved capacitor dielectric layers
MOSEL VITELIC INC35 citations92
US5851900ADec 22, 1998
Method of manufacturing a shallow trench isolation for a semiconductor device
MOSEL VITELIC INC44 citations92
US6001697ADec 14, 1999
Process for manufacturing semiconductor devices having raised doped regions
MOSEL VITELIC INC31 citations89
US6100126AAug 8, 2000
Method of making a resistor utilizing a polysilicon plug formed with a high aspect ratio
MOSEL VITELIC INC10 citations74
US5789296AAug 4, 1998
Method for manufacturing split gate flash memory
MOSEL VITELIC INC11 citations74
US5926712AJul 20, 1999
Process for fabricating MOS device having short channel
MOSEL VITELIC INC16 citations73
US5696016ADec 9, 1997
Process for manufacturing a CMOSFET intergrated circuit
MOSEL VITELIC INC17 citations71
US6010944AJan 4, 2000
Method for increasing capacity of a capacitor
MOSEL VITELIC INC1 citations46
EMEMORY TECHNOLOGY INC
6 patentsUS6920067B2Jul 19, 2005
Integrated circuit embedded with single-poly non-volatile memory
EMEMORY TECHNOLOGY INC69 citations98
US6617637B1Sep 9, 2003
Electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC57 citations96
US6801456B1Oct 5, 2004
Method for programming, erasing and reading a flash memory cell
EMEMORY TECHNOLOGY INC35 citations93
US6787419B2Sep 7, 2004
Method of forming an embedded memory including forming three silicon or polysilicon layers
EMEMORY TECHNOLOGY INC50 citations92
US6952369B2Oct 4, 2005
Method for operating a NAND-array memory module composed of P-type memory cells
EMEMORY TECHNOLOGY INC7 citations74
US6740556B1May 25, 2004
Method for forming EPROM with low leakage
EMEMORY TECHNOLOGY INC6 citations74
UNITED MICROELECTRONICS CORP
5 patentsUS6258692B1Jul 10, 2001
Method forming shallow trench isolation
UNITED MICROELECTRONICS CORP60 citations96
US6337240B1Jan 8, 2002
Method for fabricating an embedded dynamic random access memory
UNITED MICROELECTRONICS CORP27 citations92
US6232200B1May 15, 2001
Method of reconstructing alignment mark during STI process
UNITED MICROELECTRONICS CORP36 citations92
US6290631B2Sep 18, 2001
Method for restoring an alignment mark after planarization of a dielectric layer
UNITED MICROELECTRONICS CORP7 citations71
US6403411B1Jun 11, 2002
Method for manufacturing lower electrode of DRAM capacitor
UNITED MICROELECTRONICS CORP3 citations63