Inventor
CHU SANFORD
SG48 patents
⚠️ This page may combine multiple inventors who share the name “CHU SANFORD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
28 patentsUS6730573B1May 4, 2004
MIM and metal resistor formation at CU beol using only one extra mask
CHARTERED SEMICONDUCTOR MFG96 citations95
US6576526B2Jun 10, 2003
Darc layer for MIM process integration
CHARTERED SEMICONDUCTOR MFG93 citations94
US6716693B1Apr 6, 2004
Method of forming a surface coating layer within an opening within a body by atomic layer deposition
CHARTERED SEMICONDUCTOR MFG49 citations93
US7846805B2Dec 7, 2010
Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process
CHARTERED SEMICONDUCTOR MFG19 citations92
US6903013B2Jun 7, 2005
Method to fill a trench and tunnel by using ALD seed layer and electroless plating
CHARTERED SEMICONDUCTOR MFG44 citations92
US6746914B2Jun 8, 2004
Metal sandwich structure for MIM capacitor onto dual damascene
CHARTERED SEMICONDUCTOR MFG56 citations92
US6638844B1Oct 28, 2003
Method of reducing substrate coupling/noise for radio frequency CMOS (RFCMOS) components in semiconductor technology by backside trench and fill
CHARTERED SEMICONDUCTOR MFG29 citations92
US6714112B2Mar 30, 2004
Silicon-based inductor with varying metal-to-metal conductor spacing
CHARTERED SEMICONDUCTOR MFG37 citations90
US6835631B1Dec 28, 2004
Method to enhance inductor Q factor by forming air gaps below inductors
CHARTERED SEMICONDUCTOR MFG26 citations89
US6777774B2Aug 17, 2004
Low noise inductor using electrically floating high resistive and grounded low resistive patterned shield
CHARTERED SEMICONDUCTOR MFG29 citations89
US6825080B1Nov 30, 2004
Method for forming a MIM capacitor
CHARTERED SEMICONDUCTOR MFG26 citations86
US7824968B2Nov 2, 2010
LDMOS using a combination of enhanced dielectric stress layer and dummy gates
CHARTERED SEMICONDUCTOR MFG14 citations84
US7488662B2Feb 10, 2009
Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process
CHARTERED SEMICONDUCTOR MFG15 citations84
US6486017B1Nov 26, 2002
Method of reducing substrate coupling for chip inductors by creation of dielectric islands by selective EPI deposition
CHARTERED SEMICONDUCTOR MFG15 citations82
US6375857B1Apr 23, 2002
Method to form fuse using polymeric films
CHARTERED SEMICONDUCTOR MFG12 citations74
US6852605B2Feb 8, 2005
Method of forming an inductor with continuous metal deposition
CHARTERED SEMICONDUCTOR MFG10 citations73
US7250669B2Jul 31, 2007
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks
CHARTERED SEMICONDUCTOR MFG6 citations72
US6869884B2Mar 22, 2005
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks
CHARTERED SEMICONDUCTOR MFG7 citations72
US6861317B1Mar 1, 2005
Method of making direct contact on gate by using dielectric stop layer
CHARTERED SEMICONDUCTOR MFG10 citations72
US6608362B1Aug 19, 2003
Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components
CHARTERED SEMICONDUCTOR MFG8 citations72
US7410874B2Aug 12, 2008
Method of integrating triple gate oxide thickness
CHARTERED SEMICONDUCTOR MFG7 citations71
US6933188B1Aug 23, 2005
Use of a selective hard mask for the integration of double diffused drain MOS devices in deep sub-micron fabrication technologies
CHARTERED SEMICONDUCTOR MFG8 citations71
US6780727B2Aug 24, 2004
Method for forming a MIM (metal-insulator-metal) capacitor
CHARTERED SEMICONDUCTOR MFG8 citations66
US6821904B2Nov 23, 2004
Method of blocking nitrogen from thick gate oxide during dual gate CMP
CHARTERED SEMICONDUCTOR MFG3 citations62
US7382027B2Jun 3, 2008
MOSFET device with low gate contact resistance
CHARTERED SEMICONDUCTOR MFG4 citations61
US7060193B2Jun 13, 2006
Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits
CHARTERED SEMICONDUCTOR MFG3 citations60
US7323736B2Jan 29, 2008
Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits
CHARTERED SEMICONDUCTOR MFG4 citations59
US7867862B2Jan 11, 2011
Semiconductor structure including high voltage device
CHARTERED SEMICONDUCTOR MFG1 citations51
GLOBALFOUNDRIES SG PTE LTD
6 patentsUS8349692B2Jan 8, 2013
Channel surface technique for fabrication of FinFET devices
GLOBALFOUNDRIES SG PTE LTD9 citations84
US8383475B2Feb 26, 2013
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD3 citations61
US8664711B2Mar 4, 2014
Dielectric stack
GLOBALFOUNDRIES SG PTE LTD0 citations51
US8664708B2Mar 4, 2014
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD1 citations51
US8659067B2Feb 25, 2014
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD0 citations51
US8383476B2Feb 26, 2013
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD1 citations51
TAN CHUNG FOONG
3 patentsUS8896072B2Nov 25, 2014
Channel surface technique for fabrication of FinFET devices
TAN CHUNG FOONG5 citations83
US8110470B2Feb 7, 2012
Asymmetrical transistor device and method of fabrication
TAN CHUNG FOONG4 citations62
US8629503B2Jan 14, 2014
Asymmetrical transistor device and method of fabrication
TAN CHUNG FOONG1 citations51
GLOBALFOUNDRIES INC
3 patentsUS10115719B2Oct 30, 2018
Integrated circuits with resistor structures formed from MIM capacitor material and methods for fabricating same
GLOBALFOUNDRIES INC3 citations73
US9583557B2Feb 28, 2017
Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime
GLOBALFOUNDRIES INC5 citations72
US9530833B2Dec 27, 2016
Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof
GLOBALFOUNDRIES INC3 citations72
CHU SANFORD
3 patentsUS8293614B2Oct 23, 2012
High performance LDMOS device having enhanced dielectric strain layer
CHU SANFORD5 citations70
US8334567B2Dec 18, 2012
LDMOS using a combination of enhanced dielectric stress layer and dummy gates
CHU SANFORD3 citations61
US8163621B2Apr 24, 2012
High performance LDMOS device having enhanced dielectric strain layer
CHU SANFORD2 citations59