Inventor
PEAKE STEVEN T
GB20 patents
⚠️ This page may combine multiple inventors who share the name “PEAKE STEVEN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KONINKL PHILIPS ELECTRONICS NV
12 patentsUS6825105B2Nov 30, 2004
Manufacture of semiconductor devices with Schottky barriers
KONINKL PHILIPS ELECTRONICS NV87 citations97
US6566708B1May 20, 2003
Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture
KONINKL PHILIPS ELECTRONICS NV66 citations95
US6534367B2Mar 18, 2003
Trench-gate semiconductor devices and their manufacture
KONINKL PHILIPS ELECTRONICS NV67 citations93
US7122860B2Oct 17, 2006
Trench-gate semiconductor devices
KONINKL PHILIPS ELECTRONICS NV33 citations92
US6660591B2Dec 9, 2003
Trench-gate semiconductor devices having a channel-accommodating region and their methods of manufacture
KONINKL PHILIPS ELECTRONICS NV31 citations89
US6664593B2Dec 16, 2003
Field effect transistor structure and method of manufacture
KONINKL PHILIPS ELECTRONICS NV18 citations84
US6677642B2Jan 13, 2004
Field effect transistor structure and method of manufacture
KONINKL PHILIPS ELECTRONICS NV16 citations83
US6780722B2Aug 24, 2004
Field effect transistor on insulating layer and manufacturing method
KONINKL PHILIPS ELECTRONICS NV2 citations62
US6800900B2Oct 5, 2004
Trench-gate semiconductor devices and their manufacture
KONINKL PHILIPS ELECTRONICS NV2 citations61
US6629303B2Sep 30, 2003
Semiconductor device layout
KONINKL PHILIPS ELECTRONICS NV2 citations53
US7122433B2Oct 17, 2006
Method for manufacturing trench gate semiconductor device
KONINKL PHILIPS ELECTRONICS NV1 citations51
US6753588B2Jun 22, 2004
Semiconductor rectifier
KONINKL PHILIPS ELECTRONICS NV0 citations41
NXP BV
7 patentsUS7504690B2Mar 17, 2009
Power semiconductor devices
NXP BV30 citations92
US7504307B2Mar 17, 2009
Semiconductor devices including voltage-sustaining space-charge zone and methods of manufacture thereof
NXP BV19 citations84
US7232726B2Jun 19, 2007
Trench-gate semiconductor device and method of manufacturing
NXP BV19 citations84
US7682889B2Mar 23, 2010
Trench field effect transistor and method of making it
NXP BV3 citations62
US7579649B2Aug 25, 2009
Trench field effect transistor and method of making it
NXP BV3 citations62
US7332771B2Feb 19, 2008
Trench-gate semiconductor devices
NXP BV2 citations62
US7642596B2Jan 5, 2010
Insulated gate field effect transistor
NXP BV0 citations41