Field effect transistor structure and method of manufacture

Abstract

A field effect transistor structure is formed with a body semiconductor layer ( 5 ) having source ( 9 ), body ( 7 ), drift region and drain ( 11 ). An upper semiconductor layer ( 21 ) is separated from the body by an oxide layer ( 17 ). The upper semiconductor layer ( 21 ) is doped to have a gate region ( 23 ) arranged over the body ( 7 ), a field plate region ( 25 ) arranged over the drift region 13 and at least one p-n junction ( 26 ) forming at least one diode between the field plate region ( 25 ) and the gate region ( 23 ). A source contact ( 39 ) is connected to both the source ( 9 ) and the field plate region ( 25 ).

What is claimed is:  
     
       1. A field effect transistor comprising: 
       a source and a drain laterally spaced in a body semiconductor layer;  
       a channel and a drift region in the body semiconductor layer between the source and the drain;  
       an oxide layer over the channel and the drift region;  
       an upper semiconductor layer arranged over the oxide layer, wherein the upper semiconductor layer is doped to have a gate region arranged over the channel but not over the source, a field plate region arranged over the drift region and at least one p-n junction forming at least one diode between the field plate region and the gate region; and  
       an electrical interconnection between the source region and the field plate region to electrically connect the source region and the field plate region.  
     
     
       2. A transistor according to  claim 1  further comprising a substrate and a buried oxide layer over the substrate and under the body semiconductor layer. 
     
     
       3. A transistor according to  claim 1  wherein the upper semiconductor layer is doped to have alternating p and n regions forming a plurality of back to back diodes. 
     
     
       4. A transistor according to  claim 1  wherein the oxide layer includes a LOCOS layer above the drift region and a thinner oxide layer above the channel to act as the gate oxide. 
     
     
       5. A transistor according to  claim 1  wherein the drift region has a laterally varying dopant concentration, with a higher dopant concentration adjacent to the drain region and a lower dopant concentration adjacent to the channel. 
     
     
       6. An insulated gate field effect transistor according to  claim 1  wherein the doping concentration and the thickness of the drift region are such that the drift region is depleted throughout its thickness and along its length when the transistor is turned off.