Inventor · disambiguated record
Yung-Tsung Wei
Also filed as: WEI YUNG-TSUNG
7 granted patents·8 pending applications·32 citations·filing 2000–2005
80Inventor score
Top patents by PatentIndex Score
15 records- 0164US6569771B2Carrier head for chemical mechanical polishingUNITED MICROELECTRONICS CORP·Filed 2002·Granted May 27, 2003·10 cites·13 claims
- 0261US6455432B1Method for removing carbon-rich particles adhered on a copper surfaceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Sep 24, 2002·8 cites·35 claims
- 0360US6380069B1Method of removing micro-scratch on metal layerUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 30, 2002·10 cites·18 claims
- 0451US6616510B2Chemical mechanical polishing method for copperUNITED MICROELECTRONICS CORP·Filed 2000·Granted Sep 9, 2003·3 cites·38 claims
- 0547US6486079B2Method for stabilizing low dielectric constant materialsUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 26, 2002·1 cites·12 claims
- 0640US2002137319A1Method of fabricating a damascene structureUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 0739US2006252266A1Cmp process of high selectivityLEE CHIH-YUEH·Filed 2005·Application pending·0 cites
- 0838US7232752B2Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operationUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jun 19, 2007·0 cites·17 claims
- 0938US2002106877A1Method of fabricating a damascene structureFiled 2001·Application pending·0 cites
- 1035US6696361B2Post-CMP removal of surface contaminants from silicon waferUNITED MICROELECTRONICS CORP·Filed 2001·Granted Feb 24, 2004·0 cites·8 claims
- 1135US2002090893A1Method for improving curvature of the polished surface by chemical mechanical polishingUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 1235US2002177308A1Method for surface treatment protecting metallic surface of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 1335US2002068435A1Method for removing carbon-rich particles adhered on the exposed copper surface of a copper/low k dielectric dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2000·Application pending·0 cites
- 1434US2002182853A1Method for removing hard-mask layer after metal-CMP in dual-damascene interconnect structureFiled 2001·Application pending·0 cites
- 1534US2002102840A1Method for manufacturing cooper interconnects by using a cap layerFiled 2001·Application pending·0 cites
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